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H. Meng

H. Meng appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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Published work

2 published item(s)

preprint2020arXiv

Magnetic Flux Pumping in Superconducting Loop Containing a Josephson $ψ$ Junction

We demonstrate that a Josephson junction with a half-metallic weak link integrated into the superconducting loop enables the pumping of magnetic flux piercing the loop. In such junctions, the ground state phase $ψ$ is determined by the mutual orientation of magnetic moments in two ferromagnets surrounding the half-metal. Thus, the precession of magnetic moment in one of two ferromagnets controlled, e.g., by the microwave radiation, results in the accumulation of the phase $ψ$ and subsequent switching between the states with different vorticities. The proposed flux pumping mechanism does not require the application of voltage or external magnetic field which enables the design of electrically decoupled memory cells in superconducting spintronics.

preprint2013arXiv

Electric-field-induced strain-mediated magnetoelectric effect in CoFeB-MgO magnetic tunnel junctions

Magnetoelectric coupling between magnetic and electric dipoles is one of the cornerstones of modern physics towards developing the most energy-efficient magnetic data storage. Conventionally, magnetoelectric coupling is achieved in single-phase multiferroics or in magnetoelectric composite nanostructures consisting of ferromagnetic and ferroelectric/piezoelectric materials. Here, we demonstrate an electric-field-induced strain-mediated magnetoelectric effect in ultrathin CoFeB/MgO magnetic tunnel junction employing non-piezoelectric material, which is a vitally important structure for spintronic devices, by using dynamical magnetoelectric and piezoresponse force microscopy measurement techniques. We show that the applied electric-field induces strain in a few atomic layers of dielectric MgO which is transferred to magnetostrictive CoFeB layer, resulting in a magnetoelectric effect of magnitude up to 80.8 V cm-1 Oe-1 under -0.5 V. The demonstrated strain-mediated magnetoelectric effect with an electric field in magnetic tunnel junctions is a significant step towards exploring magnetoelectrically controlled spintronic devices for low-power and high density magnetic data storage applications.