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H. J. W. Zandvliet

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cond-mat.mtrl-sci

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preprint2021arXiv

Spectroscopic signature of surface states and bunching of bulk subbands in topological insulator (Bi $_{0.4}$ Sb $_{0.6}$ ) $_2$ Te $_3$ thin films

High quality thin films of the topological insulator (Bi $_{0.4}$ Sb $_{0.6}$ ) $_2$ Te $_3$ have been deposited on SrTiO $_3$ (111) by molecular beam epitaxy. Their electronic structure was investigated by in situ angle-resolved photoemission spectroscopy and in situ scanning tunneling spectroscopy. The experimental results reveal striking similarities with relativistic ab-initio tight binding calculations. We find that ultrathin slabs of the three-dimensional topological insulator (Bi $_{0.4}$ Sb $_{0.6}$ ) $_2$ Te $_3$ display topological surface states, surface states with large weight on the outermost Te atomic layer, and dispersive bulk energy levels that are quantized. We observe that the bandwidth of the bulk levels is strongly reduced. These bunched bulk states as well as the surface states give rise to strong peaks in the local density of states.

preprint2015arXiv

In-situ spectroscopy of intrinsic Bi2Te3 topological insulator thin films and impact of extrinsic defects

Combined in-situ x-ray photoemission spectroscopy, scanning tunnelling spectroscopy and angle resolved photoemission spectroscopy of molecular beam epitaxy grown Bi2Te3 on lattice mismatched substrates reveal high quality stoichiometric thin films with topological surface states without a contribution from the bulk bands at the Fermi energy. The absence of bulk states at the Fermi energy is achieved without counter doping. We observe that the surface morphology and electronic band structure of Bi2Te3 are not affected by in-vacuo storage and exposure to oxygen, whereas major changes are observed when exposed to ambient conditions. These films help define a pathway towards intrinsic topological devices.

preprint2010arXiv

Parallel electron-hole bilayer conductivity from electronic interface reconstruction

The perovskite SrTiO $_3$ -LaAlO $_3$ structure has advanced to a model system to investigate the rich electronic phenomena arising at polar interfaces. Using first principles calculations and transport measurements we demonstrate that an additional SrTiO $_3$ capping layer prevents structural and chemical reconstruction at the LaAlO $_3$ surface and triggers the electronic reconstruction at a significantly lower LaAlO $_3$ film thickness than for the uncapped systems. Combined theoretical and experimental evidence (from magnetotransport and ultraviolet photoelectron spectroscopy) suggests two spatially separated sheets with electron and hole carriers, that are as close as 1 nm.

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H. J. W. Zandvliet

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3 publications

Spectroscopic signature of surface states and bunching of bulk subbands in topological insulator (Bi $_{0.4}$ Sb $_{0.6}$ ) $_2$ Te $_3$ thin films

In-situ spectroscopy of intrinsic Bi2Te3 topological insulator thin films and impact of extrinsic defects

Parallel electron-hole bilayer conductivity from electronic interface reconstruction

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H. J. W. Zandvliet

Research overview

Is this your work?

3 publications

Spectroscopic signature of surface states and bunching of bulk subbands in topological insulator (Bi0.4_{0.4}0.4​Sb0.6_{0.6}0.6​)2_22​Te3_33​ thin films

In-situ spectroscopy of intrinsic Bi2Te3 topological insulator thin films and impact of extrinsic defects

Parallel electron-hole bilayer conductivity from electronic interface reconstruction

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Spectroscopic signature of surface states and bunching of bulk subbands in topological insulator (Bi $_{0.4}$ Sb $_{0.6}$ ) $_2$ Te $_3$ thin films