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H. Groiss

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cond-mat.mtrl-sci cond-mat.mes-hall

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preprint2020arXiv

Out-of-Plane Magnetic Anisotropy in Ordered Ensembles of Fe $_y$ N Nanocrystals Embedded in GaN

Phase-separated semiconductors containing magnetic nanostructures are relevant systems for the realization of high-density recording media. Here, the controlled strain engineering of Ga $δ$ FeN layers with Fe $_y$ N embedded nanocrystals (NCs) \textit{via} Al $_x$ Ga $_{1-x}$ N buffers with different Al concentration $0<x_\mathrm{Al}<41$ \% is presented. Through the addition of Al to the buffer, the formation of predominantly prolate-shaped $\varepsilon$ -Fe $_3$ N NCs takes place. Already at an Al concentration $x_\mathrm{Al}$ \, $\approx$ \,5\% the structural properties---phase, shape, orientation---as well as the spatial distribution of the embedded NCs are modified in comparison to those grown on a GaN buffer. Although the magnetic easy axis of the cubic $γ$ '-Ga $_y$ Fe $_{4-y}$ N nanocrystals in the layer on the $x_\mathrm{Al} = 0\%$ buffer lies in-plane, the easy axis of the $\varepsilon$ -Fe $_3$ N NCs in all samples with Al $_x$ Ga $_{1-x}$ N buffers coincides with the $[0001]$ growth direction, leading to a sizeable out-of-plane magnetic anisotropy and opening wide perspectives for perpendicular recording based on nitride-based magnetic nanocrystals.

preprint2018arXiv

Large magnetic gap at the Dirac point in a Mn-induced Bi $_2$ Te $_3$ heterostructure

Magnetically doped topological insulators enable the quantum anomalous Hall effect (QAHE) which provides quantized edge states for lossless charge transport applications. The edge states are hosted by a magnetic energy gap at the Dirac point but all attempts to observe it directly have been unsuccessful. The gap size is considered crucial to overcoming the present limitations of the QAHE, which so far occurs only at temperatures one to two orders of magnitude below its principle limit set by the ferromagnetic Curie temperature $T_C$ . Here, we use low temperature photoelectron spectroscopy to unambiguously reveal the magnetic gap of Mn-doped Bi $_2$ Te $_3$ films, which is present only below $T_C$ . Surprisingly, the gap turns out to be $\sim$ 90 meV wide, which not only exceeds $k_BT$ at room temperature but is also 5 times larger than predicted by density functional theory. By an exhaustive multiscale structure characterization we show that this enhancement is due to a remarkable structure modification induced by Mn doping. Instead of a disordered impurity system, it forms an alternating sequence of septuple and quintuple layer blocks, where Mn is predominantly incorporated in the septuple layers. This self-organized heterostructure substantially enhances the wave-function overlap and the size of the magnetic gap at the Dirac point, as recently predicted. Mn-doped Bi $_2$ Se $_3$ forms a similar heterostructure, however, only a large, nonmagnetic gap is formed. We explain both differences based on the higher spin-orbit interaction in Bi $_2$ Te $_3$ with the most important consequence of a magnetic anisotropy perpendicular to the films, whereas for Bi $_2$ Se $_3$ the spin-orbit interaction it is too weak to overcome the dipole-dipole interaction. Our findings provide crucial insights for pushing the lossless transport properties of topological insulators towards room-temperature applications.

preprint2015arXiv

Efficient room-temperature light-emitters based on partly amorphised Ge quantum dots in crystalline Si

Semiconductor light emitters compatible with standard Si integration technology (SIT) are of particular interest for overcoming limitations in the operating speed of microelectronic devices 1-3. Light sources based on group-IV elements would be SIT compatible but suffer from the poor optoelectronic properties of bulk Si and Ge. Here, we demonstrate that epitaxially grown Ge quantum dots (QDs) in a fully coherent Si matrix show extraordinary optical properties if partially amorphised by Ge-ion bombardment (GIB). The GIB-QDs exhibit a quasi-direct-band gap and show, in contrast to conventional SiGe nanostructures, almost no thermal quenching of the photoluminescence (PL) up to room-temperature (RT). Microdisk resonators with embedded GIB-QDs exhibit threshold-behaviour and super-linear increase of the integrated PL-intensity (IPL) with increasing excitation power Pexc which indicates light amplification by stimulated emission in a fully SIT-compatible group-IV nano-system.

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H. Groiss

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3 publications

Out-of-Plane Magnetic Anisotropy in Ordered Ensembles of Fe $_y$ N Nanocrystals Embedded in GaN

Large magnetic gap at the Dirac point in a Mn-induced Bi $_2$ Te $_3$ heterostructure

Efficient room-temperature light-emitters based on partly amorphised Ge quantum dots in crystalline Si

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H. Groiss

Research overview

Is this your work?

3 publications

Out-of-Plane Magnetic Anisotropy in Ordered Ensembles of Fey_yy​N Nanocrystals Embedded in GaN

Large magnetic gap at the Dirac point in a Mn-induced Bi2_22​Te3_33​ heterostructure

Efficient room-temperature light-emitters based on partly amorphised Ge quantum dots in crystalline Si

See the researcher in context

Building this map preview

Out-of-Plane Magnetic Anisotropy in Ordered Ensembles of Fe $_y$ N Nanocrystals Embedded in GaN

Large magnetic gap at the Dirac point in a Mn-induced Bi $_2$ Te $_3$ heterostructure