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A. Ney

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cond-mat.mtrl-sci cond-mat.mes-hall cond-mat.other

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preprint2022arXiv

Valence state and lattice incorporation of Ni in Zn/Co-based magnetic oxides

Ni incorporation has been studied in a comprehensive range of Zn/Co-based magnetic oxides to elucidate it valence state and lattice incorporation. The resulting structural and magnetic properties are studied in detail. To the one end Ni in incorporated by in-diffusion as well as reactive magnetron co-sputtering in wurtzite ZnO where only the Ni-diffused ZnO exhibits significant conductivity. This is complemented by Ni and Co codoping of ZnO leading. To the other end, the ZnCo$_2$O$_4$ spinel is co-doped with varying amounts of Ni. In the wurtzite oxides Ni is exclusively found on tetrahedral lattice sites in its formal 2+ oxidation state as deep donor. It behaves as an anisotropic paramagnet and a limited solubility of Ni about 10\% is found. Due to its smaller magnetic moment it can induce partial uncompensation of the Co magnetic moments due to antiferromagnetic coupling. In the spinel Ni is found to be incorporated in its formal 3+ oxidation state on octahedral sites and couples antiferromagnetically to the Co moments leading again to magnetic uncompensation of the otherwise antiferromagnetic ZnCo$_2$O$_4$ spinel and to ferrimagnetism at higher Ni concentrations. Increasing Ni even further leads to phase separation of cubic NiO resulting in an exchange-biased composite magnetic oxide.

preprint2020arXiv

Direct imaging of the ac component of the pumped spin polarization with element specificity

Spin pumping in a ferromagnet/nonferromagnet heterostructure is directly imaged with spatial resolution as well as element selectivity. The time-resolved detection in scanning transmission x-ray microscopy allows to directly probe the spatial extent of the ac spin polarization in Co-doped ZnO which is generated by spin pumping from an adjacent permalloy microstrip. Comparing the relative phases of the dynamic magnetization component of the two constituents is possible and found to be antiphase. The correlation between the distribution of the magnetic excitation in the permalloy and the Co-doped ZnO reveals that laterally there is no one-to-one correlation. The observed distribution is rather complex, but integrating over larger areas clearly demonstrates that the spin polarization in the nonferromagnet extends laterally beyond the region of the ferromagnetic microstrip. Therefore the observations are better explained by a local spin pumping efficieny and a lateral propagation of the ac spin polarization in the nonferromagnet over the range of a few micrometers.

preprint2020arXiv

Out-of-Plane Magnetic Anisotropy in Ordered Ensembles of Fe$_y$N Nanocrystals Embedded in GaN

Phase-separated semiconductors containing magnetic nanostructures are relevant systems for the realization of high-density recording media. Here, the controlled strain engineering of Ga$δ$FeN layers with Fe$_y$N embedded nanocrystals (NCs) \textit{via} Al$_x$Ga$_{1-x}$N buffers with different Al concentration $0<x_\mathrm{Al}<41$\% is presented. Through the addition of Al to the buffer, the formation of predominantly prolate-shaped $\varepsilon$-Fe$_3$N NCs takes place. Already at an Al concentration $x_\mathrm{Al}$\,$\approx$\,5\% the structural properties---phase, shape, orientation---as well as the spatial distribution of the embedded NCs are modified in comparison to those grown on a GaN buffer. Although the magnetic easy axis of the cubic $γ$'-Ga$_y$Fe$_{4-y}$N nanocrystals in the layer on the $x_\mathrm{Al} = 0\%$ buffer lies in-plane, the easy axis of the $\varepsilon$-Fe$_3$N NCs in all samples with Al$_x$Ga$_{1-x}$N buffers coincides with the $[0001]$ growth direction, leading to a sizeable out-of-plane magnetic anisotropy and opening wide perspectives for perpendicular recording based on nitride-based magnetic nanocrystals.

preprint2018arXiv

Large magnetic gap at the Dirac point in a Mn-induced Bi$_2$Te$_3$ heterostructure

Magnetically doped topological insulators enable the quantum anomalous Hall effect (QAHE) which provides quantized edge states for lossless charge transport applications. The edge states are hosted by a magnetic energy gap at the Dirac point but all attempts to observe it directly have been unsuccessful. The gap size is considered crucial to overcoming the present limitations of the QAHE, which so far occurs only at temperatures one to two orders of magnitude below its principle limit set by the ferromagnetic Curie temperature $T_C$. Here, we use low temperature photoelectron spectroscopy to unambiguously reveal the magnetic gap of Mn-doped Bi$_2$Te$_3$ films, which is present only below $T_C$. Surprisingly, the gap turns out to be $\sim$90 meV wide, which not only exceeds $k_BT$ at room temperature but is also 5 times larger than predicted by density functional theory. By an exhaustive multiscale structure characterization we show that this enhancement is due to a remarkable structure modification induced by Mn doping. Instead of a disordered impurity system, it forms an alternating sequence of septuple and quintuple layer blocks, where Mn is predominantly incorporated in the septuple layers. This self-organized heterostructure substantially enhances the wave-function overlap and the size of the magnetic gap at the Dirac point, as recently predicted. Mn-doped Bi$_2$Se$_3$ forms a similar heterostructure, however, only a large, nonmagnetic gap is formed. We explain both differences based on the higher spin-orbit interaction in Bi$_2$Te$_3$ with the most important consequence of a magnetic anisotropy perpendicular to the films, whereas for Bi$_2$Se$_3$ the spin-orbit interaction it is too weak to overcome the dipole-dipole interaction. Our findings provide crucial insights for pushing the lossless transport properties of topological insulators towards room-temperature applications.

preprint2016arXiv

Nonmagnetic band gap at the Dirac point of the magnetic topological insulator (Bi$_{1-x}$Mn$_x)_2$Se$_3$

Magnetic doping is expected to open a band gap at the Dirac point of topological insulators by breaking time-reversal symmetry and to enable novel topological phases. Epitaxial (Bi$_{1-x}$Mn$_{x}$)$_{2}$Se$_{3}$ is a prototypical magnetic topological insulator with a pronounced surface band gap of $\sim100$ meV. We show that this gap is neither due to ferromagnetic order in the bulk or at the surface nor to the local magnetic moment of the Mn, making the system unsuitable for realizing the novel phases. We further show that Mn doping does not affect the inverted bulk band gap and the system remains topologically nontrivial. We suggest that strong resonant scattering processes cause the gap at the Dirac point and support this by the observation of in-gap states using resonant photoemission. Our findings establish a novel mechanism for gap opening in topological surface states which challenges the currently known conditions for topological protection.

preprint2011arXiv

Sensitive SQUID magnetometry for studying nano-magnetism

The superconducting quantum interference device (SQUID) magnetometer is one of the most sensitive experimental techniques to magnetically characterize samples with high sensitivity. Here we present a detailed discussion of possible artifacts and pitfalls characteristic for commercial SQUID magnetometers. This includes intrinsic artifacts which stem from the inherent design of the magnetometer as well as potential issues due to the user. We provide some guidelines how to avoid and correct these, which is of particular importance when the proper magnetization of nano-scale objects shall be established in cases where its response is dwarfed by that of the substrate it comes with, a situation frequently found in the field of nano-magnetism.