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Researcher profile

H. C. Hsu

H. C. Hsu contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.str-elcond-mat.othernlin.PSphysics.flu-dyn

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Published work

5 published item(s)

preprint2016arXiv

Modulation Instability and Phase-Shifted Fermi-Pasta-Ulam Recurrence

Instabilities are common phenomena frequently observed in nature, sometimes leading to unexpected catastrophes and disasters in seemingly normal conditions. The simplest form of instability in a distributed system is its response to a harmonic modulation. Such instability has special names in various branches of physics and is generally known as modulation instability (MI). The MI is tightly related to Fermi-Pasta-Ulam (FPU) recurrence since breather solutions of the nonlinear Schrödinger equation (NLSE) are known to accurately describe growth and decay of modulationally unstable waves in conservative systems. Here, we report theoretical, numerical and experimental evidence of the effect of dissipation on FPU cycles in a super wave tank, namely their shift in a determined order. In showing that ideal NLSE breather solutions can describe such dissipative nonlinear dynamics, our results may impact the interpretation of a wide range of new physics scenarios.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Nonmagnetic impurity perturbation to the quasi-two-dimensional quantum helimagnet LiCu2O2

A complete phase diagram of Zn substituted quantum quasi-two-dimensional helimagnet LiCu2O2 has been presented. Helical ordering transition temperature (T_h) of the original LiCu2O2 follows finite size scaling for less than ~ 5.5% Zn substitution, which implies the existence of finite helimagnetic domains with domain boundaries formed with nearly isolated spins. Higher Zn substitution > 5.5% quenches the long-range helical ordering and introduces an intriguing Zn level dependent magnetic phase transition with slight thermal hysteresis and a universal quadratic field dependence for T_c (Zn > 0.055,H). The magnetic coupling constants of nearest-neighbor (nn) J1 and next-nearest-neighbor (nnn) J2 (alpha=J2/J1) are extracted from high temperature series expansion (HTSE) fitting and N=16 finite chain exact diagonalization simulation. We have also provided evidence of direct correlation between long-range helical spin ordering and the magnitude of electric polarization in this spin driven multiferroic material.

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preprint2010arXiv

Temperature-Dependent Anomalies in the Structure of the (001) Surface of LiCu2O2

Surface corrugation functions, derived from elastic helium atom scattering (HAS) diffraction patterns at different temperatures, reveal that the Cu2+ rows in the (001) surface of LiCu2O2 undergo an outward displacement of about 0.15 Å as the surface was cooled down to 140 K. This is probably the first time that isolated one-dimensional magnetic ion arrays were realized, which qualifies the Li1+Cu2+O2-2 surface as a candidate to study one-dimensional magnetism. The rising Cu2+ rows induce a surface incommensurate structural transition along the a-direction. Surface equilibrium analysis showed that the surface Cu2+ ions at bulk-like positions experience a net outward force along the surface normal which is relieved by the displacement. Temperature-dependent changes of the surface phonon dispersions obtained with the aid of inelastic HAS measurements combined with surface lattice dynamical calculations are also reported.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Investigation of the Structural and Dynamical Properties of the (001) Surface of LiCu2O2

We report on studies of the structure and dynamics of the (001)surface of single crystal LiCu2O2, investigated by He beam scattering at room temperature, and with lattice dynamical models. The best fit surface corrugation to measured diffraction patterns shows that the surface termination is exclusively a Li+1Cu+2O-2 plane. Lattice dynamics fits to inelastic He scattering spectra reveal the presence of two low-lying surface phonon modes, identified with the motion of Cu+2, Li+1 surface ions normal to the surface.

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preprint2009arXiv

Mechanism of recrystallization process in epitaxial GaN under dynamic stress field - Atomistic origin of planar defect formation

The mechanism of recrystallization in epitaxial (1000) GaN film, introduced by indentation technique, is probed by lattice dynamic studies using Raman spectroscopy. The recrystallized region is identified by Micro-Raman area mapping. Pop-in bursts in loading lines indicate nucleation of dislocations and climb of dislocations. These processes set in plastic motion of lattice atoms under stress field at the center of indentation for the initiation of recrystallization process. A planar defect migration mechanism is evolved. A pivotal role of vacancy migration is pointed out, for the first time, as the rate limiting factor for the dislocation dynamics initiating the recrystallization process in GaN.

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