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H. -C. Chang

H. -C. Chang contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2013arXiv

Quenching nitrogen-vacancy center photoluminescence with infrared pulsed laser

Diamond nanocrystals containing Nitrogen-Vacancy (NV) color centers have been used in recent years as fluorescent probes for near-field and cellular imaging. In this work we report that an infrared (IR) pulsed excitation beam can quench the photoluminescence of NV color center in a diamond nanocrystal (size < 50 nm) with an extinction ratio as high as ~90%. We attribute this effect to the heating of the nanocrystal consecutive to multi-photon absorption by the diamond matrix. This quenching is reversible: the photoluminescence intensity goes back to its original value when the IR laser beam is turned off, with a typical response time of hundred picoseconds, allowing for a fast control of NV color center photoluminescence. We used this effect to achieve sub-diffraction limited imaging of fluorescent diamond nanocrystals on a coverglass. For that, as in Ground State Depletion super-resolution technique, we combined the green excitation laser beam with the control IR depleting one after shaping its intensity profile in a doughnut form, so that the emission comes only from the sub-wavelength size central part.

preprint2010arXiv

Surface-induced charge state conversion of nitrogen-vacancy defects in nanodiamonds

We present a study of the charge state conversion of single nitrogen-vacancy (NV) defects hosted in nanodiamonds (NDs). We first show that the proportion of negatively-charged NV$^{-}$ defects, with respect to its neutral counterpart NV$^{0}$, decreases with the size of the ND. We then propose a simple model based on a layer of electron traps located at the ND surface which is in good agreement with the recorded statistics. By using thermal oxidation to remove the shell of amorphous carbon around the NDs, we demonstrate a significant increase of the proportion of NV$^{-}$ defects in 10-nm NDs. These results are invaluable for further understanding, control and use of the unique properties of negatively-charged NV defects in diamond