Source author record

H. Bartolf

H. Bartolf appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

cond-mat.mes-hall cond-mat.supr-con physics.ins-det

Catalog footprint

What is connected

3works

3topics

4close collaborators

Actions

Connect this record

Open graph Browse works

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

preprint2010arXiv

Nanoscale Fabrication by Intrinsic Suppression of Proximity-Electron Exposures and General Considerations for Easy & Effective Top-Down Fabrication

We present results of a planar process development based on the combination of electron-beam lithography and dry etching for fabricating high-quality superconducting photosensitive structures in the sub-100nm regime. The devices were fabricated by the application of an intrinsic proximity effect suppression procedure which makes the need for an elaborated correction algorithm redundant for planar design layouts which are orders of magnitude smaller than the backscattering length. In addition, we discuss the necessary considerations for extending the fabrication spatial scale of optical contactlithography with a mercury arc-discharge photon source down to the order of the exposure photon's wavelength ( sub-μm ), thereby minimizing the writing time on the electron-beam lithograph. Finally we developed a unique and novel technique for controlling the undercut during a planar lift-off fabrication procedure without cleaving the wafer.

preprint2010arXiv

Symbiotic Optimization of the Nanolithography and RF-Plasma Etching for Fabricating High-Quality Light-Sensitive Superconductors on the 50 nm Scale

We present results of a fabrication-process development for the lithographic pattern transfer into the sub-100nm range by combining electron-beam lithography and reactive dry etching to obtain high quality niobium-based light-sensitive superconducting devices. To achieve this spatial resolution, we systematically investigated the stability of the positive organic etching masks ZEP 520A and PMMA 950k in different properly operated fluoride based plasma discharges. The chemically more robust ZEP 520A was used for defining the nanoscaled superconductors during the dry plasma etching. Our etching recipe is appropriate for a precisely controlled removal of a number of transition metals, their nitrides and a number of lithographic resists. Our process yielded lightsensitive superconducting devices made from NbN with smallest planar lateral dimensions of about 50nm with a critical temperature Tc(0) of about 13K , which is close to the transition temperature of the unstructured thin film. Our ultra-narrow current paths are able to permanently carry bias-currents up to 60% of the theoretical de-pairing current-limit.

preprint2009arXiv

Current Assisted, Thermally Activated Flux Liberation in Ultrathin Nanopatterned NbN Superconducting Meander Structures

We present results from an extensive study of fluctuation phenomena in superconducting nanowires made from sputtered NbN. Nanoscale wires were fabricated in form of a meander and operated at a constant temperature T~0.4Tc(0). The superconducting state is driven close to the electronic phase transition by a high bias current near the critical one. Fluctuations of sufficient strength temporarily drive a section of the meander structure into the normal conducting state, which can be registered as a voltage pulse of nanosecond duration. We considered three different models (vortex-antivortex pairs, vortex edge barriers and phase slip centers) to explain the experimental data. Only thermally excited vortices, either via unbinding of vortex-antivortex pairs or vortices overcoming the edge barrier, lead to a satisfactory and consistent description for all measurements.