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Source author record

Guy Trambly de Laissardière

Guy Trambly de Laissardière appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-elcond-mat.dis-nnphysics.comp-ph

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Published work

13 published item(s)

preprint2020arXiv

Electronic localization in twisted bilayer MoS$_2$ with small rotation angle

Moiré patterns are known to confine electronic states in transition metal dichalcogenide bilayers, thus generalizing the notion of magic angles discovered in twisted bilayer graphene to semiconductors. Here, we present a revised Slater-Koster tight-binding model that facilitates the first reliable and systematic studies of such states in twisted bilayer MoS$_2$ for the whole range of rotation angles $θ$. We show that isolated bands appear at low energy for $θ\lesssim 5 - 6^\circ$. Moreover, these bands become "flatbands", characterized by a vanishing average velocity, for the smallest angles $θ\lesssim 2^\circ$.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Electronic structure and quantum transport in twisted bilayer graphene with resonant scatterers

Staking layered materials revealed to be a very powerful method to tailor their electronic properties. It has indeed been theoretically and experimentally shown that twisted bilayers of graphene (tBLG) with a rotation angle $θ$, forming Moiré pattern, confine electrons in a tunable way as a function of $θ$. Here, we study electronic structure and transport in tBLG using tight-binding numerical calculations in commensurate twisted bilayer structures and a pertubative continuous theory, which is valid for not too small angles ($θ> \sim 2^\circ $). This two approaches allow to understand the effect of $θ$ on the local density of states, the electron lifetime due to disorder, the dc-conducitivity and the quantum correction of the conductivity due to multiple scattering effects. We distinguished the cases where disorder is equaly distributed in the two layer or only in one layer. When only one layer is disordered, diffusion properties depends strongly on $θ$, showing thus the effect of Moiré electronic localisation at intermediate angles, $\sim 2^\circ < θ< \sim 20^\circ$.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Spin-caloritronic transport in hexagonal graphene nanoflakes

We investigate the spin-dependent thermoelectric effect of graphene flakes with magnetic edges in the ballistic regime. Employing static, respectively, dynamic mean-field theory we first show that magnetism appears at the zigzag edges for a window of Coulomb interactions that increases significantly with increasing flake size. We then use the Landauer formalism in the framework of the non-equilibrium Green's function method to calculate the spin and charge currents in magnetic hexagonal graphene flakes by varying the temperature of the junction for different flake sizes. While in non-magnetic gated graphene the temperature gradient drives a charge current, we observe a significant spin current for hexagonal graphene flakes with magnetic zigzag edges. Specifically, we show that in the "meta" configuration of a hexagonal flake subject to weak Coulomb interactions, a pure spin current can be driven just by a temperature gradient in a temperature range that is promising for device applications. Bigger flakes are found to yield a bigger window of Coulomb interactions where such spin currents are induced by the magnetic zigzag edges, and larger values of the current.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Modelization of charge carriers mobilities in halide perovskites: Fröhlich scattering and quantum localization effects in a dynamic disorder regime

We analyze the quantum transport properties of MAPbI3 within a tight-binding model. Charge carriers are strongly scattered by the Fröhlich interaction with longitudinal optical phonon modes. This limits their mobilities at room temperature to the order of 200 cm$^2$/Vs. In the presence of additional extrinsic disorder the mobility decreases and a large fraction of the electronic states at band edges can be localized. These states would be insulating if the lattice were static, but their localization is broken by the dynamic disorder induced by the vibrations of the longitudinal optical modes. This process of electrons and holes diffusion, driven by the lattice dynamics, contributes to the unique electronic properties of this material.

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preprint2019arXiv

Quantum localization and electronic transport in covalently functionalized carbon nanotubes

Carbon nanotubes are of central importance for applications in nano-electronics thanks to their exceptional transport properties. They can be used as sensors, for example in biological applications, provided that they are functionalized to detect specific molecules. Due to their one-dimensional geometry the carbon nanotubes are very sensitive to the phenomenon of Anderson localization and it is therefore essential to know how the functionalization modifies their conduction properties and if they remain good conductors. Here we present a study of the quantum localization induced by functionalization in metallic single walled carbon nanotubes (SWCNT) with circumferences up to $ 15\; nm $. We consider resonant and non-resonant adsorbates that represent two types of covalently functionalized groups with moderate and strong scattering properties. The present study provides a detailed analysis of the localization behaviour and shows that the localization length can decrease down to $ 20-50\; nm $ at concentrations of about 1 percent of adsorbates. On this basis we discuss the possible electronic transport mechanisms which can be either metallic like or insulating like with variable range hopping.

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preprint2014arXiv

Conductivity of Graphene with Resonant Adsorbates: Beyond the Nearest Neighbor Hopping Model

Adsorbates on graphene can create resonances that lead to efficient electron scattering and strongly affect the electronic conductivity. Therefore a proper description of these resonances is important to get a good insight of their effect on conductivity. The characteristics of the resonance and in particular its T-matrix depend on the adsorbate itself but also on the electronic structure of graphene. Here we show that a proper tight-binding model of graphene which includes hopping beyond the nearest-neighbor lead to sizable modifications of the scattering properties with respect to the mostly used nearest neighbor hopping model. We compare results obtained with hopping beyond the nearest-neighbor to those of our recent work Phys. Rev. Lett. 113, 146601 (2013). We conclude that the universal properties discussed in our recent work are unchanged but that a detailed comparison with experiments require a sufficiently precise tight-binding model of the graphene layer.

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preprint2013arXiv

Anomalous electronic transport in Quasicrystals and related Complex Metallic Alloys

We analyze the transport properties in approximants of quasicrystals alpha-AlMnSi, 1/1-AlCuFe and for the complex metallic phase lambda-AlMn. These phases presents strong analogies in their local atomic structures and are related to existing quasicrystalline phases. Experimentally they present unusual transport properties with low conductivities and a mix of metallic-like and insulating-like characteristics. We compute the band structure and the quantum diffusion in the perfect structure without disorder and introduce simple approximations that allow to treat the effect of disorder. Our results demonstrate that the standard Bloch-Boltzmann theory is not applicable to these intermetallic phases. Indeed their dispersion relation are flat indicating small band velocities and corrections to quantum diffusion that are not taken into account in the semi-classical Bloch-Boltzmann scheme become dominant. We call this regime the small velocity regime. A simple Relaxation Time Approximation to treat the effect of disorder allows us to reproduce the main experimental facts on conductivity qualitatively and even quantitatively.

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preprint2013arXiv

Conductivity of graphene with resonant and non-resonant adsorbates

We propose a unified description of transport in graphene with adsorbates that fully takes into account localization effects and loss of electronic coherence due to inelastic processes. We focus in particular on the role of the scattering properties of the adsorbates and analyze in detail cases with resonant or non resonant scattering. For both models we identify several regimes of conduction depending on the value of the Fermi energy. Sufficiently far from the Dirac energy and at sufficiently small concentrations the semi-classical theory can be a good approximation. Near the Dirac energy we identify different quantum regimes, where the conductivity presents universal behaviors.

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preprint2013arXiv

Electronic structure and transport in approximants of the Penrose tiling

We present numerical calculations of electronic structure and transport in Penrose approximants. The electronic structure of perfect approximants shows a spiky density of states and a tendency to localization that is more pronounced in the middle of the band. Near the band edges the behavior is more similar to that of free electrons. These calculations of band structure and in particular the band scaling suggest an anomalous quantum diffusion when compared to normal ballistic crystals. This is confirmed by a numerical calculation of quantum diffusion which shows a crossover from normal ballistic propagation at long times to anomalous, possibly insulator-like, behavior at short times. The time scale t*(E) for this crossover is computed for several approximants and is detailed. The consequences for electronic conductivity are discussed in the context of the relaxation time approximation. The metallic like or non metallic like behavior of the conductivity is dictated by the comparison between the scattering time due to defects and the time scale t*(E).

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preprint2010arXiv

Breakdown of the semi-classical conduction theory in approximants of the octagonal tiling

We present numerical calculations of quantum transport in perfect octagonal approximants. These calculations include a Boltzmann (intra-band) contribution and a non-Boltzmann (inter-band) contribution. When the unit cell size of the approximant increases, the magnitude of Boltzmann terms decreases, whereas the magnitude of non-Boltzmann terms increases. It shows that, in large approximants, the non-Boltzmann contributions should dominate the transport properties of electrons. This confirms the break-down of the Bloch-Boltzmann theory to understand the transport properties in approximants with very large unit cells, and then in quasicrystals, as found in actual Al-based approximants.

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preprint2009arXiv

Localization of Dirac electrons by Moire patterns in graphene bilayers

We study the electronic structure of two Dirac electron gazes coupled by a periodic Hamiltonian such as it appears in rotated graphene bilayers. Ab initio and tight-binding approaches are combined and show that the spatially periodic coupling between the two Dirac electron gazes can renormalize strongly their velocity. We investigate in particular small angles of rotation and show that the velocity tends to zero in this limit. The localization is confirmed by an analysis of the eigenstates which are localized essentially in the AA zones of the Moire patterns.

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preprint2006arXiv

Quantum transport of slow charge carriers in quasicrystals and correlated systems

We show that the semi-classical model of conduction breaks down if the mean free path of charge carriers is smaller than a typical extension of their wavefunction. This situation is realized for sufficiently slow charge carriers and leads to a transition from a metallic like to an insulating like regime when scattering by defects increases. This explains the unconventional conduction properties of quasicrystals and related alloys. The conduction properties of some heavy fermions or polaronic systems, where charge carriers are also slow, present a deep analogy.

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preprint2005arXiv

Electronic structure of complex spd Hume-Rothery phases in transition-metal aluminides

The discovery of quasicrystals phases and approximants in Al(rich)-Mn system has revived the interest for complex aluminides containing transition-metal atoms. On one hand, it is now accepted that the Hume-Rothery stabilization plays a crucial role. On the other hand, transition-metal atoms have also a very important effect on their stability and their physical properties. In this paper, we review studies that unifies the classical Hume-Rothery stabilization for sp electron phases with the virtual bound state model for transition-metal atoms embedded in the aluminum matrix. These studies lead to a new theory for spd electron phases\". It is applied successfully to Al(Si)--transition-metal alloys and it gives a coherent picture of their stability and physical properties. These works are based on first-principles calculations of the electronic structure and simplified models, compared to experimental results. A more detailed review article is published in Prog. Mater. Sci. 50 (2005) p. 679-788.

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