Researcher profile

Guy Trambly de Laissardière

Guy Trambly de Laissardière contributes to research discovery and scholarly infrastructure.

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Published work

6 published item(s)

preprint2020arXiv

Electronic localization in twisted bilayer MoS$_2$ with small rotation angle

Moiré patterns are known to confine electronic states in transition metal dichalcogenide bilayers, thus generalizing the notion of magic angles discovered in twisted bilayer graphene to semiconductors. Here, we present a revised Slater-Koster tight-binding model that facilitates the first reliable and systematic studies of such states in twisted bilayer MoS$_2$ for the whole range of rotation angles $θ$. We show that isolated bands appear at low energy for $θ\lesssim 5 - 6^\circ$. Moreover, these bands become "flatbands", characterized by a vanishing average velocity, for the smallest angles $θ\lesssim 2^\circ$.

preprint2020arXiv

Electronic structure and quantum transport in twisted bilayer graphene with resonant scatterers

Staking layered materials revealed to be a very powerful method to tailor their electronic properties. It has indeed been theoretically and experimentally shown that twisted bilayers of graphene (tBLG) with a rotation angle $θ$, forming Moiré pattern, confine electrons in a tunable way as a function of $θ$. Here, we study electronic structure and transport in tBLG using tight-binding numerical calculations in commensurate twisted bilayer structures and a pertubative continuous theory, which is valid for not too small angles ($θ> \sim 2^\circ $). This two approaches allow to understand the effect of $θ$ on the local density of states, the electron lifetime due to disorder, the dc-conducitivity and the quantum correction of the conductivity due to multiple scattering effects. We distinguished the cases where disorder is equaly distributed in the two layer or only in one layer. When only one layer is disordered, diffusion properties depends strongly on $θ$, showing thus the effect of Moiré electronic localisation at intermediate angles, $\sim 2^\circ < θ< \sim 20^\circ$.

preprint2020arXiv

Spin-caloritronic transport in hexagonal graphene nanoflakes

We investigate the spin-dependent thermoelectric effect of graphene flakes with magnetic edges in the ballistic regime. Employing static, respectively, dynamic mean-field theory we first show that magnetism appears at the zigzag edges for a window of Coulomb interactions that increases significantly with increasing flake size. We then use the Landauer formalism in the framework of the non-equilibrium Green&#39;s function method to calculate the spin and charge currents in magnetic hexagonal graphene flakes by varying the temperature of the junction for different flake sizes. While in non-magnetic gated graphene the temperature gradient drives a charge current, we observe a significant spin current for hexagonal graphene flakes with magnetic zigzag edges. Specifically, we show that in the &#34;meta&#34; configuration of a hexagonal flake subject to weak Coulomb interactions, a pure spin current can be driven just by a temperature gradient in a temperature range that is promising for device applications. Bigger flakes are found to yield a bigger window of Coulomb interactions where such spin currents are induced by the magnetic zigzag edges, and larger values of the current.

preprint2019arXiv

Modelization of charge carriers mobilities in halide perovskites: Fröhlich scattering and quantum localization effects in a dynamic disorder regime

We analyze the quantum transport properties of MAPbI3 within a tight-binding model. Charge carriers are strongly scattered by the Fröhlich interaction with longitudinal optical phonon modes. This limits their mobilities at room temperature to the order of 200 cm$^2$/Vs. In the presence of additional extrinsic disorder the mobility decreases and a large fraction of the electronic states at band edges can be localized. These states would be insulating if the lattice were static, but their localization is broken by the dynamic disorder induced by the vibrations of the longitudinal optical modes. This process of electrons and holes diffusion, driven by the lattice dynamics, contributes to the unique electronic properties of this material.

preprint2019arXiv

Quantum localization and electronic transport in covalently functionalized carbon nanotubes

Carbon nanotubes are of central importance for applications in nano-electronics thanks to their exceptional transport properties. They can be used as sensors, for example in biological applications, provided that they are functionalized to detect specific molecules. Due to their one-dimensional geometry the carbon nanotubes are very sensitive to the phenomenon of Anderson localization and it is therefore essential to know how the functionalization modifies their conduction properties and if they remain good conductors. Here we present a study of the quantum localization induced by functionalization in metallic single walled carbon nanotubes (SWCNT) with circumferences up to $ 15\; nm $. We consider resonant and non-resonant adsorbates that represent two types of covalently functionalized groups with moderate and strong scattering properties. The present study provides a detailed analysis of the localization behaviour and shows that the localization length can decrease down to $ 20-50\; nm $ at concentrations of about 1 percent of adsorbates. On this basis we discuss the possible electronic transport mechanisms which can be either metallic like or insulating like with variable range hopping.

preprint2009arXiv

Localization of Dirac electrons by Moire patterns in graphene bilayers

We study the electronic structure of two Dirac electron gazes coupled by a periodic Hamiltonian such as it appears in rotated graphene bilayers. Ab initio and tight-binding approaches are combined and show that the spatially periodic coupling between the two Dirac electron gazes can renormalize strongly their velocity. We investigate in particular small angles of rotation and show that the velocity tends to zero in this limit. The localization is confirmed by an analysis of the eigenstates which are localized essentially in the AA zones of the Moire patterns.