Researcher profile

Guy Deutscher

Guy Deutscher contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2020arXiv

Granular superconductors for high kinetic inductance and low loss quantum devices

Granular aluminum is a promising material for high kinetic inductance devices such as qubit circuits. It has the advantage over atomically disordered materials such as NbN_x, to maintain a high kinetic inductance concomitantly with a high quality factor. We show that high quality nano-scale granular aluminum films having a sharp superconducting transition with normal state resistivity values of the order of 1x10^5 μΩcm and kinetic inductance values of the order of 10 nH/sq can be obtained, surpassing state of the art values. We argue that this is a result of the different nature of the metal-to-insulator transition, being electronic correlations driven (Mott type) in the former and disorder driven (Anderson type) in the latter.

preprint2018arXiv

Kubo spins in nano-scale aluminum grains: A muon spin relaxation study

We report muon spin relaxation rate measurements on films composed of aluminum grains having a size of a few nm, with a large energy level splitting of the order of 100 K. The films range from weakly metallic to insulating. In the insulating case the low temperature relaxation rate is consistent with the presence of single electron spins in grains having an odd number of electrons. The relaxation rate temperature dependence follows an activation law having an energy scale in agreement with the average level splitting. In weakly metallic films the relaxation rate is smaller and decreases faster with temperature. Overall our observations are in line with the presence of a Kubo spin in Al nano-size grains due to quantum size effects.

preprint2011arXiv

Coexistence of a triplet nodal order-parameter and a singlet order-parameter at the interfaces of ferromagnet-superconductor Co/CoO/In junctions

We present differential conductance measurements of Cobalt / Cobalt-Oxide / Indium planar junctions, 500nm x 500nm in size. The junctions span a wide range of barriers, from very low to a tunnel barrier. The characteristic conductance of all the junctions show a V-shape structure at low bias instead of the U-shape characteristic of a s-wave order parameter. The bias of the conductance peaks is, for all junctions, larger than the gap of indium. Both properties exclude pure s-wave pairing. The data is well fitted by a model that assumes the coexistence of s-wave singlet and equal spin p-wave triplet fluids. We find that the values of the s-wave and p-wave gaps follow the BCS temperature dependance and that the amplitude of the s-wave fluid increases with the barrier strength.