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Guoying Gao

Guoying Gao appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-sciphysics.comp-phcond-mat.mes-hallcond-mat.supr-con

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Published work

8 published item(s)

preprint2022arXiv

Superconducting LaP2H2 with graphenelike phosphorus layers

Novel structural building blocks in compounds could induce interesting physical and chemical properties. Although phosphorus tends to form very different motifs, the existence of lone pair electrons has always prevented the formation of graphenelike structures. Here, the application of first-principles swarm structural calculations has allowed us to predict the stability of pressure-induced hexagonal LaP2H2 containing graphenelike phosphorus, which derives from the trigonal bipyramid configuration of P atoms regulated by symmetric hydrogen bonds. LaP2 in LaP2H2 has the same configuration as MgB2, and P and H atoms form a three-dimensional framework as H3S. Interestingly, LaP2H2 shows a superconductivity dominated by the graphenelike phosphorus layer and its coupling with La atoms. On the other hand, LaP2H2 is not only superconducting at a lower pressure than the H-rich LaPH6, but it also shows a superconducting transition temperature three times higher. Our work provides an example which extends the landscape of conventional superconductors at lower pressures.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Discovery of carbon-based strongest and hardest amorphous material

Carbon is likely the most fascinating element of the periodic table because of the diversity of its allotropes stemming from its variable (sp, sp2, and sp3) bonding motifs. Exploration of new forms of carbon has been an eternal theme of contemporary scientific research. Here we report on novel amorphous carbon phases containing high fraction of sp3 bonded atoms recovered after compressing fullerene C60 to previously unexplored high pressure and temperature. The synthesized carbons are the hardest and strongest amorphous materials known to date, capable of scratching diamond crystal and approaching its strength which is evidenced by complimentary mechanical tests. Photoluminescence and absorption spectra of the materials demonstrate they are semiconductors with tunable bandgaps in the range of 1.5-2.2 eV, comparable to that of amorphous silicon. A remarkable combination of the outstanding mechanical and electronic properties makes this class of amorphous carbons an excellent candidate for photovoltaic applications demanding ultrahigh strength and wear resistance.

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preprint2021arXiv

Superconductivity in graphite-diamond hybrid

Search for new high-temperature superconductors and insight into their superconducting mechanism are of fundamental importance in condensed matter physics. The discovery of near-room temperature superconductivity at more than a million atmospheres ushers in a new era for superconductors. However, the critical task of identifying materials with comparable superconductivity at near or ambient pressure remains. Carbon materials can always lead to intriguing surprises due to their structural diversity and electronic adjustability. Insulating diamond upon doping or external stimuli has achieved superconducting state. Thus, it still has a great opportunity to find superconducting ones with higher transition temperature (Tc). Here, we report an intrinsic superconducting graphite-diamond hybrid through first-principles calculations, whose atomic-resolution structural characteristics have been experimentally determined recently. The predicted Tc is approximated at 39 K at ambient pressure, and strain energizing can further boost Tc to 42 K. The strong electron-phonon coupling associated with the out-of-plane vibration of carbon atoms at the junction plays a dominant role in the superconducting transition. Our work demonstrates the great potential of such carbon materials as high-Tc superconductors, which will definitely attract extensive research.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Helium Induced Nitrogen Salt at High Pressure

The energy landscape of helium-nitrogen mixtures is explored by ab initio evolutionary searches, which predicted several stable helium-nitrogen compounds in the pressure range from 25 to 100 GPa. In particular, the monoclinic structure of HeN$_{22}$ consists of neutral He atoms, partially ionic dimers N$_{2}$$^{δ-}$, and lantern-like cages N$_{20}$$^{δ+}$. The presence of helium not only greatly enhances structural diversity of nitrogen solids, but also tremendously lowers the formation pressure of nitrogen salt. The unique nitrogen framework of (HeN$_{20}$)$^{δ+}$N$_{2}$$^{δ-}$ may be quenchable to ambient pressure even after removing helium. The estimated energy density of N$_{20}$$^{δ+}$N$_{2}$$^{δ-}$ (10.44 kJ/g) is $\sim$2.4 times larger than that of trinitrotoluene (TNT), indicating a very promising high-energy-density material.

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preprint2019arXiv

Strain tunable pudding-mold-type band structure and thermoelectric properties of SnP$_3$ monolayer

Recent studies indicated the interesting metal-to-semiconductor transition when layered bulk GeP3 and SnP3 are restricted to the monolayer or bilayer, and SnP3 monolayer has been predicted to possess high carrier mobility and promising thermoelectric performance. Here, we investigate the biaxial strain effect on the electronic and thermoelectric properties of SnP3 monolayer. Our first-principles calculations combined with Boltzmann transport theory indicate that SnP3 monolayer has the pudding-mold-type valence band structure, giving rise to a large p-type Seebeck coefficient and a high p-type power factor. The compressive biaxial strain can decrease the energy gap and result in the metallicity. In contrast, the tensile biaxial strain increases the energy gap, and increases the n-type Seebeck coefficient and decreases the n-type electrical conductivity. Although the lattice thermal conductivity becomes larger at a tensile biaxial strain due to the increased maximum frequency of the acoustic phonon modes and the increased phonon group velocity, it is still low, only e.g. 3.1 W/(mK) at room temperature with the 6% tensile biaxial strain. Therefore, SnP3 monolayer is a good thermoelectric material with low lattice thermal conductivity even at the 6% tensile strain, and the tensile strain is beneficial to the increase of the n-type Seebeck coefficient.

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preprint2016arXiv

Monolayer MXenes: promising half-metals and spin gapless semiconductors

Half-metals and spin gapless semiconductors are promising candidates for spintronic applications due to the complete (100%) spin polarization of electrons around the Fermi level. Based on recent experimental and theoretical findings of graphene-like monolayer transition metal carbides and nitrides (also known as MXenes), we demonstrate from first-principles calculations that monolayer Ti2C and Ti2N exhibit nearly half-metallic ferromagnetism with the magnetic moments of 1.91 and 1.00 UB per formula unit, respectively, while monolayer V2C is a metal with instable antiferromagnetism, and monolayer V2N is a nonmagnetic metal. Interestingly, under a biaxial strain, there is a phase transition from nearly half-metal to truly half-metal, spin gapless semiconductor, and metal for monolayer Ti2C. Monolayer Ti2N is still a nearly half-metal under a proper biaxial strain. Large magnetic moments can be induced by the biaxial tensile and compressive strains for monolayer V2C and V2N, respectively. We also show that the structures of these four monolayer MXenes are stable according to the calculated formation energy and phonon spectrum. Our investigations suggest that, unlike monolayer graphene, monolayer MXenes Ti2C and Ti2N without vacancy, doping or external electric field exhibit intrinsic magnetism, especially the half-metallic ferromagnetism and spin gapless semiconductivity, which will stimulate further studies on possible spintronic applications for new two-dimensional materials of MXenes.

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preprint2016arXiv

Thermoelectric transport in monolayer SnSe from first-principles calculations

Electron-crystal and phonon-glass are regarded as two essential factors for ideal thermoelectric materials, which require both an enhanced electronic transport and a depressed phononic transport. These two characteristics usually can not coexist in complete bulk semiconductors because of the strong interaction between electrons and phonons. Introducing nanostructures into bulk thermoelectric materials has long been applying to allow for diverse phonon scattering mechanisms to reduce lattice thermal conductivity while keeping the electrical conductivity intact. However, some two-dimensional materials do the opposite. Here, we propose an example of monolayer SnSe introduced from recent newly researched bulk thermoelectric materials SnSe. Through first-principles electronic structure calculations and Boltzmann transport theory, we show that the lattice thermal conductivity of monolayer SnSe is instead higher than that of bulk SnSe, leading to a depressed thermoelectric figure of merit compared with bulk one. Besides, we also find the anisotropic level in monolayer SnSe is reduced, and better thermoelectric performance can be seen in electron doping.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

High-efficient thermoelectric materials: The case of orthorhombic IV-VI compounds

Improving the thermoelectric efficiency is one of the greatest challenges in materials science. The recent discovery of excellent thermoelectric performance in simple orthorhombic SnSe crystal offers new promise in this prospect [Zhao et al. Nature 508, 373 (2014)]. By calculating the thermoelectric properties of orthorhombic IV-VI compounds GeS,GeSe,SnS,and SnSe based on the first-principles combined with the Boltzmann transport theory, we show that the Seebeck coefficient, electrical conductivity, and thermal conductivity of orthorhombic SnSe are in agreement with the recent experiment. Importantly, GeS,GeSe,and SnS exhibit comparative thermoelectric performance compared to SnSe. Especially, the Seebeck coefficients of GeS,GeSe,and SnS are even larger than that of SnSe under the studied carrier concentration and temperature region. We also use the Cahill's model to estimate the lattice thermal conductivities at the room temperature. The large Seebeck coefficients, high power factors, and low thermal conductivities make these four orthorhombic IV-VI compounds promising candidates for high-efficient thermoelectric materials.

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