BZPEERPapers, people, evidence and research paths
Menu

Discover

SearchFind papers, people, topics, institutions and opportunities from one place.GraphSee how papers, authors, topics and evidence connect.

Research tools

HomeContinue from the papers, people and topics that matter now.CollectionsTurn saved papers into reading lists, evidence maps and shareable context.ResearchReconstruct the path that led you from search to paper to question.CollaborationMove from a paper, topic or expert request into a focused thread.PublishCreate full-text research articles with metadata, formulas and versions.

Network

ExpertsFind specialists whose work and reviews explain why they can help.CommunitiesJoin research groups organized around papers, topics and shared evidence.

Opportunities

ListingsBrowse roles, calls and collaborations connected to real research context.

Account

Log inReturn to your saved papers, graph views and active threads.Create accountStart saving papers, building a research trail and joining teams.
Log inCreate account

Source author record

Guangqian Ding

Guangqian Ding appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mtrl-scicond-mat.mes-hall

Catalog footprint

What is connected

6works
2topics
4close collaborators

Actions

Connect this record

Log in to claim
Open graphBrowse works

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

6 published item(s)

preprint2022arXiv

Single pair of type-III Weyl points half-metals: BaNiIO$_6$ as an example

The realization of Weyl systems with the minimum nonzero number of Weyl points (WPs) and full spin polarization remains challenging in topology physics and spintronic. In this study, for the first time, we used first-principle calculations and symmetry analysis to demonstrate that BaNiIO$_6$, a dynamically and thermodynamically stable half-metallic material, hosts fully spin-polarized single-pair WPs (SP-WPs) with a charge number ($\cal{C}$) of $\pm$2 and a type-\uppercase\expandafter{\romannumeral3} band dispersion around the Fermi level. Moreover, the fully spin-polarized SP-WPs induce double-helicoid Fermi arcs on the (10$\overline{1}$0) surface. The half-metallic state and the spin-polarized SP-WPs are robust to uniform strains (from -10\% to +8\%) and on-site Hubbard-Coulomb interactions (from 0 eV to 6 eV). When +9 % or +10 % uniform strain is applied to the BaNiIO$_6$ system, it hosts six additional type-\uppercase\expandafter{\romannumeral2} WPs with $\lvert{\cal{C}}\rvert=1$ in the three-dimensional Brillouin zone in addition to the two type-\uppercase\expandafter{\romannumeral3} WPs with $\lvert{\cal{C}}\rvert=2$. We hope that this study will motivate future research into SP-WPs half-metals.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Origins of minimized lattice thermal conductivity and enhanced thermoelectric performance in WS2/WSe2 lateral superlattice

We report a configuration strategy for improving the thermoelectric (TE) performance of two-dimensional (2D) transition metal dichalcogenide (TMDC) WS2 based on the experimentally prepared WS2/WSe2 lateral superlattice (LS) crystal. On the basis of density function theory combined with Boltzmann transport equation, we show that the TE figure of merit zT of monolayer WS2 is remarkably enhanced when forming into a WS2/WSe2 LS crystal. This is primarily ascribed to the almost halved lattice thermal conductivity due to the enhanced anharmonic processes. Electronic transport properties parallel (xx) and perpendicular (yy) to the superlattice period are highly symmetric for both p- and n-doped LS owing to the nearly isotropic lifetime of charger carriers. The spin-orbital effect causes a significant split of conduction band and leads to three-fold degenerate sub-bands and high density of states (DOS), which offers opportunity to obtain the high n-type Seebeck coefficient (S). Interestingly, the separated degenerate sub-bands and upper conduction band in monolayer WS2 form a remarkable stairlike DOS, yielding a higher S. The hole carriers with much higher mobility than electrons reveal the high p-type power factor and the potential to be good p-type TE materials with optimal zT exceeds 1 at 400K in WS2/WSe2 LS.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Monolayer MXenes: promising half-metals and spin gapless semiconductors

Half-metals and spin gapless semiconductors are promising candidates for spintronic applications due to the complete (100%) spin polarization of electrons around the Fermi level. Based on recent experimental and theoretical findings of graphene-like monolayer transition metal carbides and nitrides (also known as MXenes), we demonstrate from first-principles calculations that monolayer Ti2C and Ti2N exhibit nearly half-metallic ferromagnetism with the magnetic moments of 1.91 and 1.00 UB per formula unit, respectively, while monolayer V2C is a metal with instable antiferromagnetism, and monolayer V2N is a nonmagnetic metal. Interestingly, under a biaxial strain, there is a phase transition from nearly half-metal to truly half-metal, spin gapless semiconductor, and metal for monolayer Ti2C. Monolayer Ti2N is still a nearly half-metal under a proper biaxial strain. Large magnetic moments can be induced by the biaxial tensile and compressive strains for monolayer V2C and V2N, respectively. We also show that the structures of these four monolayer MXenes are stable according to the calculated formation energy and phonon spectrum. Our investigations suggest that, unlike monolayer graphene, monolayer MXenes Ti2C and Ti2N without vacancy, doping or external electric field exhibit intrinsic magnetism, especially the half-metallic ferromagnetism and spin gapless semiconductivity, which will stimulate further studies on possible spintronic applications for new two-dimensional materials of MXenes.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Thermoelectric transport in monolayer SnSe from first-principles calculations

Electron-crystal and phonon-glass are regarded as two essential factors for ideal thermoelectric materials, which require both an enhanced electronic transport and a depressed phononic transport. These two characteristics usually can not coexist in complete bulk semiconductors because of the strong interaction between electrons and phonons. Introducing nanostructures into bulk thermoelectric materials has long been applying to allow for diverse phonon scattering mechanisms to reduce lattice thermal conductivity while keeping the electrical conductivity intact. However, some two-dimensional materials do the opposite. Here, we propose an example of monolayer SnSe introduced from recent newly researched bulk thermoelectric materials SnSe. Through first-principles electronic structure calculations and Boltzmann transport theory, we show that the lattice thermal conductivity of monolayer SnSe is instead higher than that of bulk SnSe, leading to a depressed thermoelectric figure of merit compared with bulk one. Besides, we also find the anisotropic level in monolayer SnSe is reduced, and better thermoelectric performance can be seen in electron doping.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Examining the thermal conductivity of half-Heusler alloy TiNiSn by first-principles calculations

The thermoelectric properties of half-Heusler alloy TiNiSn have been studied for decade, however, theoretical report on its thermal conductivity is still little known, because it is difficult to estimate effectively the lattice thermal conductivity. In this work, we use the ShengBTE code developed recently to examine the lattice thermal conductivity of TiNiSn. The calculated lattice thermal conductivity at room temperature is 7.6 W/mK, which is close to the experimental value of 8 W/mK. We also find that the total and lattice thermal conductivities dependent temperature are in good agreement with available experiments, and the total thermal conductivity is dominated by the lattice contribution. The present work is useful for the theoretical prediction of lattice thermal conductivity and the optimization of thermoelectric performance.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

High-efficient thermoelectric materials: The case of orthorhombic IV-VI compounds

Improving the thermoelectric efficiency is one of the greatest challenges in materials science. The recent discovery of excellent thermoelectric performance in simple orthorhombic SnSe crystal offers new promise in this prospect [Zhao et al. Nature 508, 373 (2014)]. By calculating the thermoelectric properties of orthorhombic IV-VI compounds GeS,GeSe,SnS,and SnSe based on the first-principles combined with the Boltzmann transport theory, we show that the Seebeck coefficient, electrical conductivity, and thermal conductivity of orthorhombic SnSe are in agreement with the recent experiment. Importantly, GeS,GeSe,and SnS exhibit comparative thermoelectric performance compared to SnSe. Especially, the Seebeck coefficients of GeS,GeSe,and SnS are even larger than that of SnSe under the studied carrier concentration and temperature region. We also use the Cahill's model to estimate the lattice thermal conductivities at the room temperature. The large Seebeck coefficients, high power factors, and low thermal conductivities make these four orthorhombic IV-VI compounds promising candidates for high-efficient thermoelectric materials.

0 citations0 reviewsNo code linkedOpen access