Source author record

Guoping Xiong

Guoping Xiong appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

Catalog footprint

What is connected

2works
2topics
4close collaborators

Actions

Connect this record

Log in to claim

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

2 published item(s)

preprint2022arXiv

Tunable Multi-Peak Perfect Absorbers Based on Borophene for High-Performance Near-Infrared Refractive Index Sensing

Borophene has recently attracted significant attention as an emerging two-dimensional monoelemental material for refractive index sensing because of its ultra-high surface-to-volume ratio and outstanding surface sensitivity. However, current research mainly focuses on designing borophene-based sensors with single-peak absorption, which lacks reliability compared to the performance of multi-peak sensors. In this paper, high-performance borophene refractive index sensors with multiple nearly perfect absorption peaks are proposed. The geometric parameters of the metadevices are optimized using finite-difference time-domain (FDTD) simulations to obtain three strong absorption peaks in the near-infrared (near-IR) regime with intensities of 99.72%, 99.18%, and 98.13%. Further calculations show that the sensitivities of the three strong peaks reach 339.1 nm shift per refractive index units (nm/RIU), 410.1 nm/RIU, and 738.1 nm/RIU, and their corresponding figure of merits (FOMs) reach up to 15.41/RIU, 14.65/RIU and 10.85/RIU, respectively, exhibiting great potential for near-IR refractive index sensing. Moreover, the three absorption peaks can be easily tuned by adjusting the carrier density of borophene, which can be realized by applying different external electric bias voltages. These results can provide theoretical guidance for the development of multi-peak near-IR dynamic integrated photonic devices

preprint2021arXiv

Molecular Understanding of the Effect of Hydrogen on Graphene Growth by Plasma-Enhanced Chemical Vapor Deposition

Plasma-enhanced chemical vapor deposition (PECVD) provides a low-temperature, highly-efficient, and catalyst-free route to fabricate graphene materials by virtue of the unique properties of plasma. In this paper, we conduct reactive molecular dynamics simulations to theoretically study the detailed growth process of graphene by PECVD at the atomic scale. Hydrocarbon radicals with different carbon/hydrogen (C/H) ratios are employed as dissociated precursors in the plasma environment during the growth process. The simulation results show that hydrogen content in the precursors significantly affects the growth behavior and critical properties of graphene. The highest number of hexagonal carbon rings formed in the graphene sheets, which is an indicator of their quality, is achieved for a C/H ratio of 1:1 in the precursors. Moreover, increasing the content of hydrogen in the precursors is shown to reduce the growth rate of carbon clusters, and prevent the formation of curved carbon structures during the growth process. The findings provide a detailed understanding of the fundamental mechanisms regarding the effects of hydrogen on the growth of graphene in a PECVD process.