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Guobin Zhang

Guobin Zhang contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2026arXiv

Language-Agnostic Visual Embeddings for Cross-Script Handwriting Retrieval

Handwritten word retrieval is vital for digital archives but remains challenging due to large handwriting variability and cross-lingual semantic gaps. While large vision-language models offer potential solutions, their prohibitive computational costs hinder practical edge deployment. To address this, we propose a lightweight asymmetric dual-encoder framework that learns unified, style-invariant visual embeddings. By jointly optimizing instance-level alignment and class-level semantic consistency, our approach anchors visual embeddings to language-agnostic semantic prototypes, enforcing invariance across scripts and writing styles. Experiments show that our method outperforms 28 baselines and achieves state-of-the-art accuracy on within-language retrieval benchmarks. We further conduct explicit cross-lingual retrieval, where the query language differs from the target language, to validate the effectiveness of the learned cross-lingual representations. Achieving strong performance with only a fraction of the parameters required by existing models, our framework enables accurate and resource-efficient cross-script handwriting retrieval.

preprint2022arXiv

Interfacial Charge-transfer Excitonic Insulator in a Two-dimensional Organic-inorganic Superlattice

Excitonic insulators are long-sought-after quantum materials predicted to spontaneously open a gap by the Bose condensation of bound electron-hole pairs, namely, excitons, in their ground state. Since the theoretical conjecture, extensive efforts have been devoted to pursuing excitonic insulator platforms for exploring macroscopic quantum phenomena in real materials. Reliable evidences of excitonic character have been obtained in layered chalcogenides as promising candidates. However, owing to the interference of intrinsic lattice instabilities, it is still debatable whether those features, such as charge density wave and gap opening, are primarily driven by the excitonic effect or by the lattice transition. Herein, we develop a novel charge-transfer excitonic insulator in organic-inorganic superlattice interfaces, which serves as an ideal platform to decouple the excitonic effect from the lattice effect. In this system, we observe the narrow gap opening and the formation of a charge density wave without periodic lattice distortion, providing visualized evidence of exciton condensation occurring in thermal equilibrium. Our findings identify spontaneous interfacial charge transfer as a new strategy for developing novel excitonic insulators and investigating their correlated many-body physics.

preprint2020arXiv

Visualizing an adjustable WO3/p-GaN heterojunction

The p-n junctions based on typical semiconductors are the elementary units for the modern electronic devices and chip industry. While the rectification property of those p-n junction is usually fixed once the unit is fabricated. Here, we proposed an adjustable n-WO3/p-GaN heterojunction with controllable electronic properties. For the prepared n-WO3/p-GaN heterojunction, it is almost transparent and shows typical p-n junction rectification. While if gradually doping some hydrogen atoms into WO3 layer by a facile electron-proton synergistic route, the heterojunction can be turned dynamically from the typical p-n junction (n-WO3/p-GaN) to standard Schottky contact (HxWO3/p-GaN) step by step. More importantly, this evolution can be directly visualized by eyesight due to the pronounced electrochromic characteristic of WO3 layer. By connecting two HxWO3/p-GaN heterojunctions, the controllable bi-functional rectification can be achieved. In addition, the HxWO3/p-GaN heterojunction can recovered to the original p-n jucntion just by annealing at ambient, demonstrating the heterojunction is controllable and reusable. The current study will open up tremendous opportunities for dynamic electronic devices in the future.