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Researcher profile

Guixin Cao

Guixin Cao contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-el

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Published work

3 published item(s)

preprint2022arXiv

Coexistence of in-plane and out-of-plane exchange Bias in correlated kagome antiferromagnet Mn3- xCrxSn

The materials exhibiting exchange bias (EB) have been extensively investigated mainly due to their great technological applications in magnetic sensors, but its underlying mechanism remains elusive. Here we report the novel coexistence of in-plane and out-of-plane EB in the Cr-doped Mn3Sn, a non-colinear antiferromagnet with a geometrically frustrated Kagome plane of Mn. Field-cooling experiments with the applied field parallel and perpendicular to the frustrated Kagome plane exhibits loop shifts and enhanced coercivities. Interestingly, a maximum EB field of 1090 Oe is observed along out-of-plane direction in the Mn2.58Cr0.42Sn sample, higher than that of in-plane value. Our results indicate that the exchange bias along perpendicular kagome plane is primarily induced by Dzyaloshinskii-Moriya interactions due to the breaking of interfacial symmetry, while the EB along kagome plane is due to the exchange effects at interface of AFM and FM component originating from the net moment. These findings provide a new insight on EB in the kagome AFM materials, which are important and highly potential to the application of antiferromagnetic spintronics.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Enhancing Perpendicular Magnetic Anisotropy in Garnet Ferrimagnet by Interfacing with Few-Layer WTe2

Engineering magnetic anisotropy in a ferro- or ferrimagnetic (FM) thin film is crucial in spintronic device. One way to modify the magnetic anisotropy is through the surface of the FM thin film. Here, we report the emergence of a perpendicular magnetic anisotropy (PMA) induced by interfacial interactions in a heterostructure comprised of a garnet ferrimagnet, Y3Fe5O12 (YIG), and the low-symmetry, high spin orbit coupling (SOC) transition metal dichalcogenide, WTe2. At the same time, we also observed an enhancement in Gilbert damping in the WTe2 covered YIG area. Both the magnitude of interface-induced PMA and the Gilbert damping enhancement have no observable WTe2 thickness dependence down to single quadruple-layer, indicating that the interfacial interaction plays a critical role. The ability of WTe2 to enhance the PMA in FM thin film, combined with its previously reported capability to generate out-of-plane damping like spin torque, makes it desirable for magnetic memory applications.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Spin-orbit-controlled metal-insulator transition in Sr$_2$IrO$_4$

In the context of correlated insulators, where electron-electron interactions (U) drive the localization of charge carriers, the metal-insulator transition (MIT) is described as either bandwidth (BC) or filling (FC) controlled. Motivated by the challenge of the insulating phase in Sr$_2$IrO$_4$, a new class of correlated insulators has been proposed, in which spin-orbit coupling (SOC) is believed to renormalize the bandwidth of the half-filled $j_{\mathrm{eff}} = 1/2$ doublet, allowing a modest U to induce a charge-localized phase. Although this framework has been tacitly assumed, a thorough characterization of the ground state has been elusive. Furthermore, direct evidence for the role of SOC in stabilizing the insulating state has not been established, since previous attempts at revealing the role of SOC have been hindered by concurrently occurring changes to the filling. We overcome this challenge by employing multiple substituents that introduce well defined changes to the signatures of SOC and carrier concentration in the electronic structure, as well as a new methodology that allows us to monitor SOC directly. Specifically, we study Sr$_2$Ir$_{1-x}$T$_x$O$_4$ (T = Ru, Rh) by angle-resolved photoemission spectroscopy (ARPES), combined with ab-initio and supercell tight-binding calculations. This allows us to distinguish relativistic and filling effects, thereby establishing conclusively the central role of SOC in stabilizing the insulating state of Sr$_2$IrO$_4$. Most importantly, we estimate the critical value for spin-orbit coupling in this system to be $λ_c = 0.42 \pm 0.01$ eV, and provide the first demonstration of a spin-orbit-controlled MIT.

0 citations0 reviewsNo code linkedOpen access