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Guchang Han

Guchang Han contributes to research discovery and scholarly infrastructure.

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Published work

5 published item(s)

preprint2014arXiv

Domain wall motions in perpendicularly magnetized CoFe/Pd multilayer nanowire

Current induced domain wall (DW) motion has been investigated in a 600-nm wide nanowire using multilayer film with a structure of Ta(5 nm)/Pd(5 nm)/[CoFe(0.4 nm)/Pd(1.2 nm)]$_{15}$/Ta(5 nm)in terms of anomalous Hall effect measurements. It is found that motion of DWs can be driven by a current density as low as 1.44$\times$10$^{11}$ A.m$^{-2}$. The effect of the Oersted field ($H_{Oe}$) and spin transfer torque field ($H_{ST}$), which are considered as effective fields for DW motion, has been quantitatively separated from the dependence of depinning fields on the current. The results show that the motion of the walls was essentially dominated by the non-adiabaticity with a high non-adiabatic factor $β$ up to 0.4.

preprint2013arXiv

All-Heusler giant-magnetoresistance junctions with matched energy bands and Fermi surfaces

We present an all-Heusler architecture which could be used as a rational design scheme for achieving high spin-filtering efficiency in the current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) devices. A Co2MnSi/Ni2NiSi/Co2MnSi trilayer stack is chosen as the prototype of such an architecture, of which the electronic structure and magnetotransport properties are systematically investigated by first principles approaches. Almost perfectly matched energy bands and Fermi surfaces between the all-Heusler electrode-spacer pair are found, indicating large interfacial spin-asymmetry, high spin-injection efficiency, and consequently high GMR ratio. Transport calculations further confirms the superiority of the all-Heusler architecture over the conventional Heusler/transition-metal(TM) structure by comparing their transmission coefficients and interfacial resistances of parallel conduction electrons, as well as the macroscopic current-voltage (I-V) characteristics. We suggest future theoretical and experimental efforts in developing novel all-Heusler GMR junctions for the read heads of the next generation high-density hard disk drives (HDDs).

preprint2013arXiv

Data Storage: Review of Heusler Compounds

In the recent decade, the family of Heusler compounds has attracted tremendous scientific and technological interest in the field of spintronics. This is essentially due to their exceptional magnetic properties, which qualify them as promising functional materials in various data-storage devices, such as giant-magnetoresistance spin valves, magnetic tunnel junctions, and spin-transfer torque devices. In this article, we provide a comprehensive review on the applications of the Heusler family in magnetic data storage. In addition to their important roles in the performance improvement of these devices, we also try to point out the challenges as well as possible solutions, of the current Heusler-based devices. We hope that this review would spark further investigation efforts into efficient incorporation of this eminent family of materials into data storage applications by fully arousing their intrinsic potential.

preprint2013arXiv

Thermal Stability and Electrical Control of Magnetization of Heusler/Oxide Interface and Non-collinear Spin Transport of Its Junction

Towards next-generation spintronics devices, such as computer memories and logic chips, it is necessary to satisfy high thermal stability, low-power consumption and high spin-polarization simultaneously. Here, from first-principles, we investigate thermal stability (both structure and magnetization) and the electric field control of magnetic anisotropy on Co2FeAl (CFA)/MgO. A phase diagram of structural thermal stability of the CFA/MgO interface is illustrated. An interfacial perpendicular-anisotropy, coming from the Fe-O orbital hybridization, provides high magnetic thermal stability and a low stray field. We find an electric-field-induced giant modification of such perpendicular-anisotropy via a great magnetoelectric effect (the anisotropy energy coefficient beta~10-7 erg/V cm). Our spin electronic-structure and non-collinear transport calculations indicate high spin-polarized interfacial states and good magnetoresistance properties of CFA/MgO/CFA perpendicular magnetic tunnel junctions.

preprint2011arXiv

Downtrack response of differential reader for high density magnetic recording

The downtrack responses of a differential reader to various magnetic patterns have been investigated micromagnetically. The differential signals can well discriminate the "0" and "1" readback bits and the waveforms obtained resemble the counterparts for longitudinal media or for perpendicular media after differentiation. Pulse shapes are found Gaussian. With decreasing head media spacing, free layer thickness, and gap length, PW50 roughly linearly decreases and the maximum signal exponentially increases. These properties, together with small inter-symbol interference, are essential for future high density magnetic recording.