Researcher profile

Guanyu Zhou

Guanyu Zhou contributes to research discovery and scholarly infrastructure.

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Published work

7 published item(s)

preprint2020arXiv

A stochastic phase model with reflective boundary and induced beating for the cardiac muscle cells

We consider the stochastic phase models for the community effect of cardiac muscle cells. The model is the extension of the stochastic integrate-and-fire model in which we incorporate the irreversibility after beating, induced beating and refractory. We focus on investigating the expectation and variance of (synchronized) beating interval. In particular, for the single-isolated cell, we obtain the closed-form expectation and variance of the beating interval, and we discover that the coefficient of variance (CV) has upper limit $\sqrt{2/3}$. For two-coupled cells, we derive the partial differential equations (PDEs) for the expected synchronized beating intervals and the distribution density of phase. Moreover, we also consider the conventional Kuramoto model for both two- and $N$-cells models, where we establish a new analysis using stochastic calculus to obtain the CV of the ''synchronized'' beating interval, and make some improvement to the literature work.

preprint2016arXiv

Interface induced high temperature superconductivity in single unit-cell FeSe films on SrTiO3(110)

We report high temperature superconductivity in one unit-cell (1-UC) FeSe films grown on STO(110) substrate by molecular beam epitaxy. By in-situ scanning tunneling spectroscopy measurement, we observed a superconducting gap as large as 17 meV. Transport measurements on 1-UC FeSe/STO(110) capped with FeTe layers reveal superconductivity with an onset TC of 31.6 K and an upper critical magnetic field of 30.2 T. We also find that the TC can be further increased by an external electric field, but the effect is smaller than that on STO(001) substrate. The study points out the important roles of interface related charge transfer and electron-phonon coupling in the high temperature superconductivity of FeSe/STO.

preprint2015arXiv

Atomically Resolved FeSe/SrTiO3(001) Interface Structure by Scanning Transmission Electron Microscopy

Interface-enhanced high-temperature superconductivity in one unit-cell (UC) FeSe films on SrTiO3(001) (STO) substrate has recently attracted much attention in condensed matter physics and material science. By combined in-situ scanning tunneling microscopy/spectroscopy (STM/STS) and ex-situ scanning transmission electron microscopy (STEM) studies, we report on atomically resolved structure including both lattice constants and actual atomic positions of the FeSe/STO interface under both non-superconducting and superconducting states. We observed TiO2 double layers (DLs) and significant atomic displacements in the top two layers of STO, lattice compression of the Se-Fe-Se triple layer, and relative shift between bottom Se and topmost Ti atoms. By imaging the interface structures under various superconducting states, we unveil a close correlation between interface structure and superconductivity. Our atomic-scale identification of FeSe/STO interface structure provides useful information on investigating the pairing mechanism of this interface-enhanced high-temperature superconducting system.

preprint2015arXiv

Interface enhanced electron-phonon coupling and high temperature superconductivity in potassium-coated ultra-thin FeSe films on SrTiO3

Alkali-metal (potassium) adsorption on FeSe thin films with thickness from two unit cells (UC) to 4-UC on SrTiO3 grown by molecular beam epitaxy is investigated with a low-temperature scanning tunneling microscope. At appropriate potassium coverage (0.2-0.3 monolayer), the tunneling spectra of the films all exhibit a superconducting-like gap larger than 11 meV (five times the gap value of bulk FeSe), and two distinct features of characteristic phonon modes at 11 meV and 21 meV. The results reveal the critical role of the interface enhanced electron-phonon coupling for possible high temperature superconductivity in the system and is consistent with recent theories. Our study provides compelling evidence for the conventional pairing mechanism for this type of heterostructure superconducting systems.

preprint2015arXiv

Penalty method with P1/P1 finite element approximation for the Stokes equations under slip boundary condition

We consider the P1/P1 or P1b/P1 finite element approximations to the Stokes equations in a bounded smooth domain subject to the slip boundary condition. A penalty method is applied to address the essential boundary condition $u\cdot n = g$ on $\partialΩ$, which avoids a variational crime and simultaneously facilitates the numerical implementation. We give $O(h^{1/2} + ε^{1/2} + h/ε^{1/2})$-error estimate for velocity and pressure in the energy norm, where $h$ and $ε$ denote the discretization parameter and the penalty parameter, respectively. In the two-dimensional case, it is improved to $O(h + ε^{1/2} + h^2/ε^{1/2})$ by applying reduced-order numerical integration to the penalty term. The theoretical results are confirmed by numerical experiments.

preprint2015arXiv

Superconductivity dichotomy in K-coated single and double unit cell FeSe films on SrTiO3

We report the superconductivity evolution of one unit cell (1-UC) and 2-UC FeSe films on SrTiO3(001) substrates with potassium (K) adsorption. By in situ scanning tunneling spectroscopy measurement, we find that the superconductivity in 1-UC FeSe films is continuously suppressed with increasing K coverage, whereas non-superconducting 2-UC FeSe films become superconducting with a gap of ~17 meV or ~11 meV depending on whether the underlying 1-UC films are superconducting or not. This work explicitly reveals that the interface electron-phonon coupling is strongly related to the charge transfer at FeSe/STO interface and plays vital role in enhancing Cooper pairing in both 1-UC and 2-UC FeSe films.

preprint2012arXiv

Wetting layer evolution and its temperature dependence during self assembly of InAs/GaAs quantum dots

For InAs/GaAs(001) quantum dot (QD) system, the wetting layer (WL) evolution and its temperature dependence were studied using reflectance difference spectroscopy (RDS) and analyzed with a rate equation model. The WL thicknesses showed a monotonic increase at relatively low growth temperatures but a first increase and then decrease at higher temperatures, which were unexpected from the thermodynamic understanding. By adopting a rate equation model, the temperature dependence of QD growth was assigned as the origin of different WL evolutions. A brief discussion on the indium desorption was also given. Those results gave hints of the kinetic aspects of QD self-assembly.