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Researcher profile

Guangyu Zhang

Guangyu Zhang contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-elcond-mat.supr-con

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Published work

6 published item(s)

preprint2022arXiv

Temperature-linear Resistivity in Twisted Double Bilayer Graphene

We report an experimental study of carrier density (n), displacement field (D) and twist angle (θ) dependence of temperature (T)-linear resistivity in twisted double bilayer graphene (TDBG). For a large twist angle (θ>1.5°) where correlated insulating states are absent, we observe a T-linear resistivity (with the slope of the order ~10Ω/K) over a wide range of carrier density and its slope decreases with increasing of n, in agreement with acoustic phonon scattering model semi-quantitatively. The slope of T-linear resistivity is non-monotonically dependent on the displacement field with a single peak structure. For device with θ~1.23° at which correlated states emerge, the slope of T-linear resistivity is found maximum (~100Ω/K) at the boundary of the halo structure where phase transition occurs, with signatures of continuous phase transition, Planckian dissipation, and the diverging effective mass; these observations are in line with quantum critical behaviors, which might be due to the symmetry-breaking instability at the critical points. Our results shed new light on correlated physics in TDBG and other twisted moiré systems.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Imaging gate-tunable Tomonaga-Luttinger liquids in 1H-MoSe$_2$ mirror twin boundaries

One-dimensional electron systems (1DESs) exhibit properties that are fundamentally different from higher-dimensional systems. For example, electron-electron interactions in 1DESs have been predicted to induce Tomonaga-Luttinger liquid behavior. Naturally-occurring grain boundaries in single-layer semiconducting transition metal dichalcogenides provide 1D conducting channels that have been proposed to host Tomonaga-Luttinger liquids, but charge density wave physics has also been suggested to explain their behavior. Clear identification of the electronic ground state of this system has been hampered by an inability to electrostatically gate such boundaries and thereby tune their charge carrier concentration. Here we present a scanning tunneling microscopy/spectroscopy study of gate-tunable mirror twin boundaries (MTBs) in single-layer 1H-MoSe$_2$ devices. Gating here enables STM spectroscopy to be performed for different MTB electron densities, thus allowing precise characterization of electron-electron interaction effects. Visualization of MTB electronic structure under these conditions allows unambiguous identification of collective density wave excitations having two distinct velocities, in quantitative agreement with the spin-charge separation predicted by finite-length Tomonaga-Luttinger-liquid theory.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Isospin competitions and valley polarized correlated insulators in twisted double bilayer graphene

New phase of matter usually emerges when a given symmetry breaks spontaneously, which can involve charge, spin, and valley degree of freedoms. Here, we report an observation of new correlated insulators evolved from spin polarized states to valley polarized states in AB-BA stacked twisted double bilayer graphene (TDBG). The transition of the isospin polarization is a result of the competition between spin and valley, driven by the displacement field (D). At a high field |D| > 0.7 V/nm, we observe valley polarized correlated insulators with a big Zeeman g factor of ~10, both at v = 2 in the moiré conduction band and more surprisingly at v = -2 in the moiré valence band. At a medium field |D| < 0.6 V/nm, by contrast, it is a conventional spin polarized correlated insulator at v = 2 and a featureless metal at v = -2. Moreover, we observe a valley polarized Chern insulator with C = 2 emanating at v = 2 in the electron side and a valley polarized Fermi surface around v = -2 in the hole side. The valley Chern insulator with C = 2 is evident from a well quantized Hall conductance plateau at 2e^2/h and correspondingly a vanishing longitudinal component. The valley polarized Fermi surface is topologically trivial with C = 0, and it shows a series of quantized Landau levels with v_LL = 0, 1, 2, 3, 4 and others. These observations are in good agreements with our band and topology calculations. Our results demonstrate a feasible way to realize isospin control and to obtain new phases of matter in TDBG by the displacement field, and might benefit other twisted or non-twisted multilayer systems.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Spatially indirect intervalley excitons in bilayer WSe2

Spatially indirect excitons with displaced wavefunctions of electrons and holes play a pivotal role in a large portfolio of fascinating physical phenomena and emerging optoelectronic applications, such as valleytronics, exciton spin Hall effect, excitonic integrated circuit and high-temperature superfluidity. Here, we uncover three types of spatially indirect excitons (including their phonon replicas) and their quantum-confined Stark effects in hexagonal boron nitride encapsulated bilayer WSe2, by performing electric field-tunable photoluminescence measurements. Because of different out-of-plane electric dipole moments, the energy order between the three types of spatially indirect excitons can be switched by a vertical electric field. Remarkably, we demonstrate, assisted by first-principles calculations, that the observed spatially indirect excitons in bilayer WSe2 are also momentum-indirect, involving electrons and holes from Q and K/Γ valleys in the Brillouin zone, respectively. This is in contrast to the previously reported spatially indirect excitons with electrons and holes localized in the same valley. Furthermore, we find that the spatially indirect intervalley excitons in bilayer WSe2 can exhibit considerable, doping-sensitive circular polarization. The spatially indirect excitons with momentum-dark nature and highly tunable circular polarization open new avenues for exotic valley physics and technological innovations in photonics and optoelectronics.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Correlated states in twisted double bilayer graphene

Electron-electron interactions play an important role in graphene and related systems and can induce exotic quantum states, especially in a stacked bilayer with a small twist angle. For bilayer graphene where the two layers are twisted by a &#34;magic angle&#34;, flat band and strong many-body effects lead to correlated insulating states and superconductivity. In contrast to monolayer graphene, the band structure of untwisted bilayer graphene can be further tuned by a displacement field, providing an extra degree of freedom to control the flat band that should appear when two bilayers are stacked on top of each other. Here, we report the discovery and characterization of such displacement-field tunable electronic phases in twisted double bilayer graphene. We observe insulating states at a half-filled conduction band in an intermediate range of displacement fields. Furthermore, the resistance gap in the correlated insulator increases with respect to the in-plane magnetic fields and we find that the g factor according to spin Zeeman effect is ~2, indicating spin polarization at half filling. These results establish the twisted double bilayer graphene as an easily tunable platform for exploring quantum many-body states.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

High-order minibands and interband Landau level reconstruction in graphene moire superlattice

The propagation of Dirac fermions in graphene through a long-period periodic potential would result in a band folding together with the emergence of a series of cloned Dirac points (DPs). In highly aligned graphene/hexagonal boron nitride (G/hBN) heterostructures, the lattice mismatch between the two atomic crystals generates a unique kind of periodic structure known as a moiré superlattice. Of particular interests is the emergent phenomena related to the reconstructed band-structure of graphene, such as the Hofstadter butterfly, topological currents, gate dependent pseudospin mixing, and ballistic miniband conduction. However, most studies so far have been limited to the lower-order minibands, e.g. the 1st and 2nd minibands counted from charge neutrality, and consequently the fundamental nature of the reconstructed higher-order miniband spectra still remains largely unknown. Here we report on probing the higher-order minibands of precisely aligned graphene moiré superlattices by transport spectroscopy. Using dual electrostatic gating, the edges of these high-order minibands, i.e. the 3rd and 4th minibands, can be reached. Interestingly, we have observed interband Landau level (LL) crossinginducing gap closures in a multiband magneto-transport regime, which originates from band overlap between the 2nd and 3rd minibands. As observed high-order minibands and LL reconstruction qualitatively match our simulated results. Our findings highlight the synergistic effect of minibands in transport, thus presenting a new opportunity for graphene electronic devices.

0 citations0 reviewsNo code linkedOpen access