Researcher profile

Goutam Dev Mukherjee

Goutam Dev Mukherjee contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate

Trust snapshot

Quick read

Trust 21 - EmergingVerification L1Unclaimed author
7works
0followers
2topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

7 published item(s)

preprint2025arXiv

Temperature and Pressure Dependent Vibrational Properties of Pristine and Doped Vacancy-Ordered Double Perovskite

Understanding lattice dynamics and structural transitions in vacancy-ordered double perovskites is crucial for developing lead-free optoelectronic materials, yet the role of dopants in modulatingthese properties remains poorly understood. We investigate the vibrational and optical properties of pristine and Antimony(Sb)-doped Cs$_2$TiCl$_6$ vacancy-ordered double perovskite through temperature-dependent Raman spectroscopy (4-273 K), high-pressure studies (0- \~30 GPa), ambient powder XRD, and photoluminescence measurements. Sb doping improves phase purity, reducing impurity-related Raman modes present in pristine samples. Most notably, Sb-doped samples exhibit an anomalous Raman mode M$_1$ appearing exclusively below 100 K at 314-319 cm$^{-1}$, accompanied by changes in the temperature coefficient $χ$ and anharmonic constant $A$ across this threshold. This behavior is absent in pristine Cs$_2$TiCl$_6$. While these observations suggest possible structural changes at low temperature, the origin of the M$_1$ mode remains unclear and may arise from disorder-activated vibrations, symmetry breaking, or dopant-induced local distortions. Low-temperature structural characterization is needed to confirm the nature of this transition. Photoluminescence shows broad self-trapped exciton emission at 448 nm with broader FWHM in Sb-doped samples (164.73 nm) compared to Bi-doped samples (138.2 nm), consistent with enhanced structural disorder. High-pressure Raman measurements reveal continuous mode hardening to 30 GPa with no phase transitions. These results demonstrate that Sb doping modulates the vibrational properties of Cs$_2$TiCl$_6$, though further investigation is required to establish the underlying mechanisms.

preprint2021arXiv

Pressure driven re-entrant magnetoelectric transition in honeycomb $Fe_{4}Nb_{2}O_{9}$

A detailed high pressure investigation is carried out on $Fe_4Nb_2O_9$ using angle resolved x-ray diffraction and Raman spectroscopy measurements. We find a structural transition from the ambient trigonal phase to a monoclinic phase above 8.8 GPa. The structural transition is assumed to be driven by a large distortion of $Nb-O_6$ octahedra as seen from x-ray diffraction analysis and a large pressure dependence of $Nb-O_6$ octahedra breathing Raman mode. Anomalous behaviour of Raman modes and increase in the phonon life time at the phase transition pressure indicate a trigonal paramagnetic phase to a monoclinic antiferromagnetic state above 8.8 GPa. Decrease in the diffusive scattering rate of low frequency electronic contribution contradicts the results of decrease in intensity of high frequency electronic response and excludes the phenomenon of insulator to metal transition. Instead the enhancement of the intensity of the Raman modes till about 8.8 GPa indicate a large change in ferroelectric polarization of the sample indicating pressure induced re-entrant magentoelectric effect in $Fe_4Nb_2O_9$.

preprint2021arXiv

Pressure induced emission enhancement and bandgap narrowing: experimental investigations and first principles theoretical simulations on a model halide perovskite

We report high-pressure photoluminescence, Raman scattering, and x-ray diffraction measurements on a lead-free halide perovskite $Cs_3Sb_2Br_9$. At about 3 GPa, an electronic transition manifests itself through a broad minimum in linewidth, a maximum in the intensity of $E_g$, $A_{1g}$ Raman modes, and the unusual change in the $c/a$ ratio of the trigonal lattice. The large compressibility and observed Raman anomalies indicate to a soft material with strong electron-phonon coupling. The observed below bandgap broadband emission in the photoluminescence measurement indicates the recombination of self-trapped excitons. The initial blueshift of the photoluminescence peak reinforces itself to the redshift at around 3 GPa due to the change in the electronic landscape. A first order trigonal to a monoclinic structural transition is also seen at 8 GPa. The first-principles density functional theory (DFT) calculations reveal that the electronic transition is associated with direct-to-indirect bandgap transition due to changes in the hybridization of $Sb-5s$ and $Br-4p$ orbitals near the Fermi level in the valence band. The experimentally observed Raman modes are assigned to their symmetry using the density functional perturbation theory. In addition, the DFT calculations predict a 27.5\% reduction of the bandgap in the pressure range 0-8 GPa.

preprint2020arXiv

Anomalous compressibility in 1T$^\prime$ MoTe$_{2}$ single crystal:High pressure Raman and structural studies

A detailed high pressure study is carried out on 1T$^\prime$ MoTe$_{2}$ using X-ray diffraction(XRD) and Raman spectroscopy measurements upto about 30.5 GPa. High pressure XRD measurements show no structural transition. All the lattice parameters exhibit anomalous changes in the pressure region 8.4 to 12.7 GPa. Compressibility of the sample is found to be reduced by almost four times above 12.7 GPa with respect to that below 8.4 GPa. The anomalies in the Raman mode corresponding to the out of plane vibrations of Mo atoms sitting in the unit cell surface indicate a strong electron phonon coupling possibly mediated by differential strain inside the unit cell.

preprint2020arXiv

High Pressure Structural Investigation on Lead-Free Piezoelectric $0.5Ba(Ti_{0.8}Zr_{0.2})O_3$-$0.5(Ba_{0.7}Ca_{0.3})TiO_3$

The solid solution $0.5Ba(Ti_{0.8}Zr_{0.2})O_3$-$0.5(Ba_{0.7}Ca_{0.3})TiO_3$ (BCZT) has become a promising member of the lead-free piezoelectric materials because of its exceptionally high piezoelectric properties. In this study, we focus on studying pressure-dependent Raman spectroscopy, powder x-ray diffraction and dielectric constant measurements on BCZT. The data show several structural transitions are present, where the system from ambient mixed phase (tetragonal, {\it {P4mm}}+ orthorhombic {\it {Amm2}}) transforms into single phase ({\it {P4mm}}) at 0.26 GPa, then converts into cubic phase ({\it {Pm3m}}) at 4.7 GPa followed by another possible structural re-ordering around 10 GPa. Although there have been a lot of unanimity with the ambient crystallographic state of BCZT, our analysis justifies the presence of an intermediate orthorhombic phase in the Morphological Phase Boundary (MPB) of BCZT phase diagram. The transformation tetragonal to cubic is indicated by the Raman mode softening, unit cell volume change and the $(Ti/Zr)O_6$ octahedra distortion, which coincides with the well-known ferroelectric-paraelectric transition of the system. The sudden drop in the dielectric constant value at 4.7 GPa also confirms the loss of ferroelectric nature of the BCZT ceramic.

preprint2020arXiv

Pressure induced emergence of visible luminescence in $Cs_3Bi_2Br_9$: Effect of structural distortion in optical behaviour

We report emergence of photoluminescence at room temperature in trigonal $Cs_3Bi_2Br_9$ at high pressures. Enhancement in intensity with pressure is found to be driven by increase in distortion of $BiBr_6$ octahedra and iso-structural transitions. Electronic band structure calculations show the sample in the high pressure phase to be an indirect band gap semiconductor. The luminescence peak profile show signatures related to the recombination of free and self trapped excitons, respectively. Blue shift of the both peaks till about 4.4 GPa are due to the exciton recombination before relaxation due to the decrease in exciton lifetime with scattering from phonons

preprint2020arXiv

Pressure induced lattice expansion and phonon softening in layered $ReS_2$

We report high pressure X-ray diffraction and a detailed systematic Raman measurements on $ReS_2$ sample, which is mechanically exfoliated from a single crystal. A few new Bragg peaks are observed to emerge above 6 GPa indicating a structural transition from distorted $1T$ to distorted $1T$$^{\prime}$ in triclinic structure. The same is corroborated by appearance of new Raman modes in the same pressure range. Softening of the Raman modes corresponding to $Re$ atom vibrations are observed in the distorted $1T$$^{\prime}$ phase in the pressure range 15-25 GPa. In the same pressure range the anomalous change in the volume is found to be induced by the lattice expansion. The volume expansion is related to the sliding of layers leading to octahedral distortion and increase in octahedral volume. The sample is found to be much incompressible above 25 GPa with respect to below 15 GPa data. The same is also reflected in the Raman mode shifts with pressure.