Researcher profile

Gokhan Bakan

Gokhan Bakan contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2021arXiv

Non-Hermitian engineering of terahertz light using exceptional points in electrically tuneable collective light-matter interactions

The topological structure associated with the branchpoint singularity around an exceptional point (EP) provides new tools for controlling the propagation of electromagnetic waves and their interaction with matter. To date, observation of EPs in light-matter interactions has remained elusive and has hampered further progress in applications of EP physics. Here, we demonstrate the emergence of EPs in the electrically controlled interaction of light with a collection of organic molecules in the terahertz regime at room temperature. We show, using time-domain terahertz spectroscopy, that the intensity and phase of terahertz pulses can be controlled by a gate voltage which drives the device across the EP. This fully electrically-tuneable system allows reconstructing the Riemann surface associated with the complex energy landscape and provides a topological control of light by tuning the loss-imbalance and frequency detuning of interacting modes. We anticipate that our work could pave the way for new means of dynamic control on the intensity and phase of terahertz field, developing topological optoelectronics, and studying the manifestations of EP physics in the quantum correlations of the light emitted by a collection of emitters coupled to resonators.

preprint2020arXiv

Chemical segregation in Ge2Sb2Te5 thin films during in-situ heating

Germanium antimony telluride has been the most used and studied phase-change material for electronic memory due to its suitable crystallization temperature, amorphous to crystalline resistance contrast, and stability of the amorphous phase. In this work, the segregation of Ge in a Ge2Sb2Te5 film of 30 nm thickness during heating inside the transmission electron microscope was observed and characterized. The Ge2Sb2Te5 film was deposited using sputtering on a Protochips Fusion holder and left uncapped in atmosphere for about four months. Oxygen incorporated within the film played a significant role in the chemical segregation observed which resulted in amorphous Ge-O grain boundaries and Sb and Te rich crystalline domains. Such composition changes can occur when the phase-change material interfaces insulating oxide layers in an integrated device and would significantly impact its electrical and thermal properties.

preprint2020arXiv

Graphene-enabled adaptive infrared textiles

Interactive clothing requires sensing and display functionalities to be embedded on textiles. Despite the significant progress of electronic textiles, the integration of optoelectronic materials on fabrics still remains as an outstanding challenge. Here, using the electro-optical tunability of graphene, we report adaptive optical textiles with electrically controlled reflectivity and emissivity covering the infrared and near-infrared wavelengths. We achieve electro-optical modulation by reversible intercalation of ions into graphene layers laminated on fabrics. We demonstrate a new class of infrared textile devices including display, yarn and stretchable devices using natural and synthetic textiles. To show the promise of our approach, we fabricated an active device directly onto a t-shirt which enables long-wavelength infrared communication via modulation of the thermal radiation from the human body. The results presented here, provide complementary technologies which could leverage the ubiquitous use of functional textiles.

preprint2020arXiv

Video-speed Graphene Modulator Arrays for Terahertz Imaging Applications

Electrically tuneable high mobility charges on graphene yield an efficient electro-optical platform to control and manipulate terahertz (THz) waves. Real-world applications require a multiplex THz device with efficient modulation over a large active area. The trade-off between the efficient gating and switching speed, however, hinders the realization of these applications. Here, we demonstrate a large-format 256-pixel THz modulator which provides high-frame-rate reconfigurable transmission patterns. The time-domain and frequency-domain THz characterizations of graphene devices reveal the relaxation pathways of gate-induced charges and ion packing at graphene-electrolyte interface. The fundamental understanding of these limiting factors enables us to break the trade-off permitting switching frequencies up to 1 kHz. To show the promises of these devices, we demonstrate a single-pixel THz camera which allows spatial and spectroscopic imaging of large-area objects without any moving components. These results provide a significant advancement towards the achievement of non-invasive THz imaging systems using graphene-based platforms.