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Girish Chandra Tewari

Girish Chandra Tewari appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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Published work

2 published item(s)

preprint2016arXiv

A Direct Determination of the Temperature of Overheated Electrons in an Insulator

Highly disordered superconductors, in the magnetic-field-driven insulating state, can show discontinuous current-voltage characteristics. Electron overheating has been shown to give a consistent description of this behavior, but there are other, more exotic, explanations including a novel, superinsulating state and a many-body localized state. We present AC-DC crossed-measurements, in which the application of a DC voltage is applied along our sample, while a small AC voltage is applied in the transverse direction. We varied the DC voltage and observed a simultaneous discontinuity in both AC and DC currents. We show that the inferred electron-temperature in the transverse measurement matches that in the longitudinal one, strongly supporting electron overheating as the source of observed current-voltage characteristics. Our measurement technique may be applicable as a method of probing electron overheating in many other physical systems, which show discontinuous or non-linear current-voltage characteristics.

preprint2010arXiv

Effect of chromium disorder on the thermoelectric properties of Layered-antiferromagnet CuCrS2

Layered-antiferromagnetic compound CuCrS2 has been prepared by different methods. The analysis of X-ray diffraction patterns of different samples gave significant amount of vacancy-disorder of Cr-atoms within the layers. Extended period of sintering above 9000C increases the transfer of Cr-atoms to the interstitial sites between the layers. This disorder has marginal effect on the Antiferromagnetic properties. The electrical conductivity is increased and the thermoelectric power remains positive and quite high between 150-400\muV/K in the paramagnetic state around room temperature with increase in disorder in different samples. We interpret the temperature dependence of electrical resistivity and thermoelectric power due to the localization of carriers by interstitial defects and the formation of magnetic polarons in the paramagnetic phase of CuCrS2.