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Gilles Pernot

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Published work

2 published item(s)

preprint2020arXiv

Frequency domain measurements of thermal properties using 3omega-Scanning Thermal Microscope in a vacuum environment

Material thermal properties characterization at nanoscales remains a challenge even if progresses were done in developing specific characterization techniques like the Scanning Thermal Microscopy (SThM). In the present work, we propose a detailed procedure based on the combined use of a SThM probe characterization and its Finite Element Modeling (FEM) to recover in-operando 3omega measurements achieved under high vacuum. This approach is based on a two-step methodology: (i) a fine description of the probe s electrical and frequency behaviors in out of contact mode to determine intrinsic parameters of the SThM tip, (b) a minimization of the free parameter of our model, i.e. the contact thermal resistance, by comparing 3omega measurements to our simulations of the probe operating in contact mode. Such an approach allows us to accurately measure thermal interface resistances of the probe as a function of the strength applied between the tip and the surface for three different materials (silicon, silica and gold). In addition, FEM modeling provides insights about the 3omega-SThM technique sensitivity, as a function of probe / sample interface resistance to measure material thermal conductivity, paving the way to quantitative SThM measurements.

preprint2014arXiv

Superdiffusive heat conduction in semiconductor alloys -- II. Truncated Lévy formalism for experimental analysis

Nearly all experimental observations of quasi-ballistic heat flow are interpreted using Fourier theory with modified thermal conductivity. Detailed Boltzmann transport equation (BTE) analysis, however, reveals that the quasi-ballistic motion of thermal energy in semiconductor alloys is no longer Brownian but instead exhibits Lévy dynamics with fractal dimension $α< 2$. Here, we present a framework that enables full 3D experimental analysis by retaining all essential physics of the quasi-ballistic BTE dynamics phenomenologically. A stochastic process with just two fitting parameters describes the transition from pure Lévy superdiffusion as short length and time scales to regular Fourier diffusion. The model provides accurate fits to time domain thermoreflectance raw experimental data over the full modulation frequency range without requiring any `effective' thermal parameters and without any a priori knowledge of microscopic phonon scattering mechanisms. Identified $α$ values for InGaAs and SiGe match ab initio BTE predictions within a few percent. Our results provide experimental evidence of fractal Lévy heat conduction in semiconductor alloys. The formalism additionally indicates that the transient temperature inside the material differs significantly from Fourier theory and can lead to improved thermal characterization of nanoscale devices and material interfaces.