Researcher profile

Germán Sciaini

Germán Sciaini contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2022arXiv

Persistent photogenerated state attained by femtosecond laser irradiation of thin $T_d$-MoTe$_2$

Laser excitation has emerged as a means to expose hidden states of matter and promote phase transitions on demand. Such laser induced transformations are often rendered possible owing to the delivery of spatially and/or temporally manipulated light, carrying energy quanta well above the thermal background. Here, we report time-resolved broadband femtosecond (fs) transient absorption measurements on thin flakes of Weyl semimetal candidate $T_d$-MoTe$_2$ subjected to various levels and schemes of fs-photoexcitation. Our results reveal that impulsive fs-laser irradiation alters the interlayer behavior of the low temperature $T_d$ phase as evidenced by the persistent disappearance of its characteristic coherent $^1$A$_1$ $=$ 13 cm$^{-1}$ shear phonon mode. We found that this structural transformation withstands thermal annealing up to 500 K, although it can be reverted to the 1$T$\' phase by fs-laser treatment at room temperature. Our work opens the door to reversible optical control of topological properties.

preprint2022arXiv

Ultrafast transport mediated homogenization of photoexcited electrons governs the softening of the $A_\mathrm{1g}$ phonon in bismuth

In order to determine the role of non-thermal transport of hot carriers which is decisive for the dissipation of energy in condensed matter we performed time-resolved broadband femtosecond transient reflectivity measurements on $7-197 \mathrm{nm}$ thick Bi(111) films epitaxially grown on Si(111). We monitored the behavior of the Fourier amplitude and the central frequency of the coherent $A_\mathrm{1g}$ phonon mode as function of the incident fluence, film thickness, and probe wavelength in the range of $580 -700 \mathrm{nm}$. The frequency redshift that follows photoexcitation was used as a robust quantity to determine the effective distribution of excited carriers that governs the displacive excitation mechanism of coherent $A_\mathrm{1g}$ phonons in Bi. For Bi films up to $50 \mathrm{nm}$ thickness a homogeneous excitation due to the ultrafast transport of hot charge carriers is observed, limited by a carrier penetration depth of $60 \mathrm{nm}$ independent of the totally deposited laser energy.