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Ariel Alcides Petruk

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2 publications

preprint2022arXiv

Persistent photogenerated state attained by femtosecond laser irradiation of thin TdT_d-MoTe2_2

Laser excitation has emerged as a means to expose hidden states of matter and promote phase transitions on demand. Such laser induced transformations are often rendered possible owing to the delivery of spatially and/or temporally manipulated light, carrying energy quanta well above the thermal background. Here, we report time-resolved broadband femtosecond (fs) transient absorption measurements on thin flakes of Weyl semimetal candidate TdT_d-MoTe2_2 subjected to various levels and schemes of fs-photoexcitation. Our results reveal that impulsive fs-laser irradiation alters the interlayer behavior of the low temperature TdT_d phase as evidenced by the persistent disappearance of its characteristic coherent 1^1A1_1 == 13 cm−1^{-1} shear phonon mode. We found that this structural transformation withstands thermal annealing up to 500 K, although it can be reverted to the 1TT\' phase by fs-laser treatment at room temperature. Our work opens the door to reversible optical control of topological properties.

preprint2022arXiv

Photoinduced Interlayer Dynamics in Td_d-MoTe2_2: A Broadband Pump-Probe Study

We report on time-resolved broadband transient reflectivity (tr-bb-TR) measurements performed on a bulk single crystal of Td_d-MoTe2_2 as a function of the incident pump fluence (F). Tr-bb-TR data unveil photoinduced electronic changes progressing on the sub-picosecond timescale as well as the dynamics of the coherent low-frequency 1A1^1A_1 interlayer shear phonon. Our results indicate a gradual evolution of both the TR and the 1A1^1A_1 Fourier intensity spectra as a function of F, ruling out the threshold-like change that has been associated with the ultrafast photoinduced Td→1T′T_d \to 1T' phase transition. We also observe a large redshift of the 1A1^1A_1 Fourier spectral features, which suggests that large renormalization effects are taking place on interband transitions that are dielectrically susceptible to the 1A1^1A_1 interlayer phonon displacement.

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