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Gerd Schönhense

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cond-mat.mtrl-sci cond-mat.str-el cond-mat.soft physics.chem-ph

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preprint2022arXiv

Structure Analysis using Time-of-Flight Momentum Microscopy with Hard X-rays: Status and Prospects

X-ray photoelectron diffraction (XPD) has developed into a powerful technique for the structural analysis of solids. Extension of the technique into the hard-X-ray range (hXPD) gives access to true bulk information. Here we give a status report on hXPD experiments using a novel full-field imaging technique: Time-of-flight momentum microscopy (ToF-MM). A special variant of ToF-MM is capable of recording high kinetic energies (up to >7keV) and enlarged k-fields-of-view. We present applications that are specific for high kinetic energies. The strong site specificity of hXPD is exemplified for NbSe2, the cubic-to-tetragonal transition in SrTiO3 and the zinc-blende structure in epitaxial GaAs films. Bloch-wave calculations show a very good agreement with experiment and reveal fingerprint-like signatures of emitter sites in host lattices. We show a dopant-site analysis in two semiconductors (Mn in GaAs and Te in Si). Hard-X-ray ARPES plus core-level hXPD enable eliminating the strong diffraction signature imprinted in HARPES maps.

preprint2021arXiv

Subpicosecond metamagnetic phase transition driven by non-equilibrium electron dynamics

Femtosecond light-induced phase transitions between different macroscopic orders provide the possibility to tune the functional properties of condensed matter on ultrafast timescales. In first-order phase transitions, transient non-equilibrium phases and inherent phase coexistence often preclude non-ambiguous detection of transition precursors and their temporal onset. Here, we present a study combining time-resolved photoelectron spectroscopy and ab-initio electron dynamics calculations elucidating the transient subpicosecond processes governing the photoinduced generation of ferromagnetic order in antiferromagnetic FeRh. The transient photoemission spectra are accounted for by assuming that not only the occupation of electronic states is modified during the photoexcitation process. Instead, the photo-generated non-thermal distribution of electrons modifies the electronic band structure. The ferromagnetic phase of FeRh, characterized by a minority band near the Fermi energy, is established 350+- 30 fs after the laser excitation. Ab-initio calculations indicate that the phase transition is initiated by a photoinduced Rh-to-Fe charge transfer.

preprint2019arXiv

Time- and momentum-resolved photoemission studies using time-of-flight momentum microscopy at a free-electron laser

Time-resolved photoemission with ultrafast pump and probe pulses is an emerging technique with wide application potential. Real-time recording of non-equilibrium electronic processes, transient states in chemical reactions or the interplay of electronic and structural dynamics offers fascinating opportunities for future research. Combining valence-band and core-level spectroscopy with photoelectron diffraction for electronic, chemical and structural analysis requires few 10 fs soft X-ray pulses with some 10 meV spectral resolution, which are currently available at high repetition rate free-electron lasers. The PG2 beamline at FLASH (DESY, Hamburg) provides a high pulse rate of 5000 pulses/s, 60 fs pulse duration and 40 meV bandwidth in an energy range of 25-830 eV with a photon beam size down to 50 microns in diameter. We have constructed and optimized a versatile setup commissioned at FLASH/PG2 that combines FEL capabilities together with a multidimensional recording scheme for photoemission studies. We use a full-field imaging momentum microscope with time-of-flight energy recording as the detector for mapping of 3D band structures in ($k_x$, $k_y$, $E$) parameter space with unprecedented efficiency. Our instrument can image full surface Brillouin zones with up to 7 Å $^{-1}$ diameter in a binding-energy range of several eV, resolving about $2.5\times10^5$ data voxels. As an example, we present results for the ultrafast excited state dynamics in the model van der Waals semiconductor WSe$_2$.

preprint2016arXiv

Crystal Growth of new charge-transfer salts based on $π$-conjugated molecules

New charge transfer crystals of $π$-conjugated, aromatic molecules (phenanthrene and picene) as donors were obtained by physical vapor transport. The melting behavior, optimization of crystal growth and the crystal structure is reported for charge transfer salts with (fluorinated) tetracyanoquinodimethane (TCNQ-F$_x$, x=0, 2, 4), which was used as acceptor material. The crystal structures were determined by single-crystal X-ray diffraction. Growth conditions for different vapor pressures in closed ampules were applied and the effect of these starting conditions for crystal size and quality is reported. The process of charge transfer was investigated by geometrical analysis of the crystal structure and by infrared spectroscopy on single crystals. With these three different acceptor strengths and the two sets of donor materials, it is possible to investigate the distribution of the charge transfer systematically. This helps to understand the charge transfer process in this class of materials with $π$-conjugated donor molecules.

preprint2014arXiv

Temperature dependence of electronic and magnetic properties of (DOEO)$_4$[HgBr$_4$]TCE single crystals

The temperature dependence of electronic and magnetic properties of the organic charge-transfer salt (DOEO)$_4$[HgBr$_4$]TCE was investigated using magnetometry. Electronic transport properties revealed three distinct phases which are related to different magnetic coupling phenomena. In the low-temperature insulating phase (T<70 K) the antiferromagnetic coupling between two distinct sites of magnetic moments causes antiferromagnetic order below the Néel temperature T$_N$=40 K. In the temperature region 70-120 K the (DOEO)$_4$[HgBr$_4$]TCE shows metallic-like behavior and with further increasing of temperature it becomes a bad metal due to loss of itinerant character and increase of hopping conductivity of charge carriers.