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Gerd Czycholl

Gerd Czycholl appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-elcond-mat.dis-nn

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Published work

8 published item(s)

preprint2019arXiv

Nonlocal Exchange Interactions in Strongly Correlated Electron Systems

We study the influence of ferromagnetic nonlocal exchange on correlated electrons in terms of a $SU(2)$-Hubbard-Heisenberg model and address the interplay of on-site interaction induced local moment formation and the competition of ferromagnetic direct and antiferromagnetic kinetic exchange interactions. In order to simulate thermodynamic properties of the system in a way that largely accounts for the on-site interaction driven correlations in the system, we advance the correlated variational scheme introduced in [M. Schüler et al., Phys. Rev. Lett. 111, 036601 (2013)] to account for explicitily symmetry broken electronic phases by introducing an auxiliary magnetic field. After benchmarking the method against exact solutions of a finite system, we study the $SU(2)$-Hubbard-Heisenberg model on a square lattice. We obtain the $U$-$J$ finite temperature phase diagram of a $SU(2)$-Hubbard-Heisenberg model within the correlated variational approach and compare to static mean field theory. While the generalized variational principle and static mean field theory yield transitions from dominant ferromagnetic to antiferromagnetic correlations in similar regions of the phase diagram, we find that the nature of the associated phase tranistions differs between the two approaches. The fluctuations accounted for in the generalized variational approach render the transitions continuous, while static mean field theory predicts discontinuous transitions between ferro- and antiferromagnetically ordered states.

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preprint2014arXiv

Determination of the Fermi Level Position in Dilute Magnetic Ga$_{1-x}$Mn$_{x}$N Films

We report on a combined theoretical and experimental determination of the Fermi level position in wurtzite Ga$_{1-x}$Mn$_{x}$N films with $x=4\%$ and $x=10\%$ as grown by molecular beam epitaxy. By means of ellipsometric measurements the real part of the frequency-dependent conductivity is determined. An electronic model in the framework of the effective bond-orbital model is parameterized in order to theoretically reproduce the measured transport properties. Predictions for the long-wavelength behaviour as a function of the Fermi level are made. The corresponding density of states obtained in this model is in qualitative agreement with first-principle calculations. The absence of a significant experimental peak in the AC conductivity for small frequencies indicates that the Fermi level lies in a gap between two Mn-related impurity bands in the host band gap.

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preprint2013arXiv

Quantum-Confined Stark Effect in polar and nonpolar Wurtzite InN/GaN Heterostructures: Influence on Electronic Structure and Compensation by Coulomb Attraction

In this paper we systematically analyze the electronic structures of polar and nonpolar wurtzite-InN/GaN quantum dots and their modification due to the quantum-confined Stark effect caused by intrinsic fields. This is achieved by combining continuum elasticity theory with an empirical tight binding model to describe the elastic and single-particle electronic properties in these nitride systems. Based on these results, a many-body treatment is used to determine optical absorption spectra. The efficiency of optical transitions depends on the interplay between the Coulomb interaction and the quantum-confined Stark effect. We introduce an effective confinement potential which represents the electronic structure under the influence of the intrinsic polarization fields and calculate the needed strength of Coulomb interaction to diminish the separation of electrons and holes.

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preprint2012arXiv

Effective Heisenberg exchange integrals of diluted magnetic semiconductors determined within realistic multi-band tight-binding models

Diluted magnetic semiconductors (DMS) like Ga$_{1-x}$Mn$_{x}$As are described by a realistic tight-binding model (TBM) for the (valence) bands of GaAs, by a Zener (J-)term modeling the coupling of the localized Mn-spins to the spins of the valence band electrons, and by an additional potential scattering (V-) term due to the Mn-impurities. We calculate the effective (Heisenberg) exchange interaction between two Mn-moments mediated by the valence electrons. The influence of the number of bands taken into account (6-band or 8-band TBM) and of the potential (impurity) scattering V-term is investigated. We find that for realistic values of the parameters Ð the indirect exchange integrals show a long-range, oscillating (RKKY-like) behavior, if the V-term is neglected, probably leading to spin-glass behavior rather than magnetic order. But by including a V-term of a realistic magnitude the exchange couplings become short ranged and mainly positive allowing for the possibility of ferromagnetic order. Our results are in good agreement with available results of ab-initio treatments.

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preprint2012arXiv

Theory of band gap bowing of disordered substitutional II-VI and III-V semiconductor alloys

For a wide class of technologically relevant compound III-V and II-VI semiconductor materials AC and BC mixed crystals (alloys) of the type A(x)B(1-x)C can be realized. As the electronic properties like the bulk band gap vary continuously with x, any band gap in between that of the pure AC and BC systems can be obtained by choosing the appropriate concentration x, granted that the respective ratio is miscible and thermodynamically stable. In most cases the band gap does not vary linearly with x, but a pronounced bowing behavior as a function of the concentration is observed. In this paper we show that the electronic properties of such A(x)B(1-x)C semiconductors and, in particular, the band gap bowing can well be described and understood starting from empirical tight binding models for the pure AC and BC systems. The electronic properties of the A(x)B(1-x)C system can be described by choosing the tight-binding parameters of the AC or BC system with probabilities x and 1-x, respectively. We demonstrate this by exact diagonalization of finite but large supercells and by means of calculations within the established coherent potential approximation (CPA). We apply this treatment to the II-VI system Cd(x)Zn(1-x)Se, to the III-V system In(x)Ga(1-x)As and to the III-nitride system Ga(x)Al(1-x)N.

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preprint2011arXiv

Origins of shortcomings in recent realistic multiband Monte-Carlo studies for GaMnAs

Magnetic properties of Mn-doped GaAs are re-investigated within a realistic multiband description of the host valence bands. We explicitely demonstrate that the recent Monte Carlo (MC) simulations performed on a large scale supercomputer suffer from severe shortcomings. Indeed, it is shown, using identical parameters that (i) the calculated Zeeman-splitting largely underestimates that obtained from first principle studies, (ii) the couplings exhibit strong RKKY oscillations, (iii) the stability region for ferromagnetism is much narrower than obtained previously and (iv) the calculated Curie temperatures appear to be at least one order of magnitudes smaller. We show that the proposed choice of physical parameters cannot describe the physics in (Ga,Mn)As.

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preprint2010arXiv

Multiband effective bond-orbital model for nitride semiconductors with wurtzite structure

A multiband empirical tight-binding model for group-III-nitride semiconductors with a wurtzite structure has been developed and applied to both bulk systems and embedded quantum dots. As a minimal basis set we assume one s-orbital and three p-orbitals, localized in the unit cell of the hexagonal Bravais lattice, from which one conduction band and three valence bands are formed. Non-vanishing matrix elements up to second nearest neighbors are taken into account. These matrix elements are determined so that the resulting tight-binding band structure reproduces the known Gamma-point parameters, which are also used in recent kp-treatments. Furthermore, the tight-binding band structure can also be fitted to the band energies at other special symmetry points of the Brillouin zone boundary, known from experiment or from first-principle calculations. In this paper, we describe details of the parametrization and present the resulting tight-binding band structures of bulk GaN, AlN, and InN with a wurtzite structure. As a first application to nanostructures, we present results for the single-particle electronic properties of lens-shaped InN quantum dots embedded in a GaN matrix.

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preprint2010arXiv

Multiband tight-binding theory of disordered ABC semiconductor quantum dots: Application to the optical properties of alloyed CdZnSe nanocrystals

Zero-dimensional nanocrystals, as obtained by chemical synthesis, offer a broad range of applications, as their spectrum and thus their excitation gap can be tailored by variation of their size. Additionally, nanocrystals of the type ABC can be realized by alloying of two pure compound semiconductor materials AC and BC, which allows for a continuous tuning of their absorption and emission spectrum with the concentration x. We use the single-particle energies and wave functions calculated from a multiband sp^3 empirical tight-binding model in combination with the configuration interaction scheme to calculate the optical properties of CdZnSe nanocrystals with a spherical shape. In contrast to common mean-field approaches like the virtual crystal approximation (VCA), we treat the disorder on a microscopic level by taking into account a finite number of realizations for each size and concentration. We then compare the results for the optical properties with recent experimental data and calculate the optical bowing coefficient for further sizes.

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