Researcher profile

Georgios Panagopoulos

Georgios Panagopoulos contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2012arXiv

Proposal For Neuromorphic Hardware Using Spin Devices

We present a design-scheme for ultra-low power neuromorphic hardware using emerging spin-devices. We propose device models for 'neuron', based on lateral spin valves and domain wall magnets that can operate at ultra-low terminal voltage of ~20 mV, resulting in small computation energy. Magnetic tunnel junctions are employed for interfacing the spin-neurons with charge-based devices like CMOS, for large-scale networks. Device-circuit co-simulation-framework is used for simulating such hybrid designs, in order to evaluate system-level performance. We present the design of different classes of neuromorphic architectures using the proposed scheme that can be suitable for different applications like, analog-data-sensing, data-conversion, cognitive-computing, associative memory, programmable-logic and analog and digital signal processing. We show that the spin-based neuromorphic designs can achieve 15X-300X lower computation energy for these applications; as compared to state of art CMOS designs.

preprint2012arXiv

Spin-Based Neuron Model with Domain Wall Magnets as Synapse

We present artificial neural network design using spin devices that achieves ultra low voltage operation, low power consumption, high speed, and high integration density. We employ spin torque switched nano-magnets for modelling neuron and domain wall magnets for compact, programmable synapses. The spin based neuron-synapse units operate locally at ultra low supply voltage of 30mV resulting in low computation power. CMOS based inter-neuron communication is employed to realize network-level functionality. We corroborate circuit operation with physics based models developed for the spin devices. Simulation results for character recognition as a benchmark application shows 95% lower power consumption as compared to 45nm CMOS design.