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Georg Wolf

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cond-mat.mes-hall cond-mat.mtrl-sci

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preprint2016arXiv

Time-Resolved Studies of the Spin-Transfer Reversal Mechanism in Perpendicularly Magnetized Magnetic Tunnel Junctions

Pulsed spin-torque switching has been studied using single-shot time-resolved electrical measurements in perpendicularly magnetized magnetic tunnel junctions as a function of pulse amplitude and junction size in 50 to 100 nm diameter circular junctions. The mean switching time depends inversely on pulse amplitude for all junctions studied. However, the switching dynamics is found to be strongly dependent on junction size and pulse amplitude. In 50 nm diameter junctions the switching onset is stochastic but the switching once started, is fast; after being initiated it takes less than 2 ns to switch. In larger diameter junctions the time needed for complete switching is strongly dependent on the pulse amplitude, reaching times less than 2 ns at large pulse amplitudes. Anomalies in the switching rate versus pulse amplitude are shown to be associated with the long lived (> 2 ns) intermediate junction resistance states.

preprint2015arXiv

Quasistatic and Pulsed Current-Induced Switching with Spin-Orbit Torques in Ultrathin Films with Perpendicular Magnetic Anisotropy

Spin-orbit interaction derived spin torques provide a means of reversing the magnetization of perpendicularly magnetized ultrathin films with currents that flow in the plane of the layers. A basic and critical question for applications is the speed and efficiency of switching with nanosecond current pulses. Here we investigate and contrast the quasistatic (slowly swept current) and pulsed current-induced switching characteristics of micron scale Hall crosses consisting of very thin ($<1$ nm) perpendicularly magnetized CoFeB layers on $β$-Ta. While complete magnetization reversal is found at a threshold current density in the quasistatic case, short duration ($\leq 10$ ns) larger amplitude pulses ($\simeq 10 \times$ the quasistatic threshold current) lead to only partial magnetization reversal and domain formation. We associate the partial reversal with the limited time for reversed domain expansion during the pulse.

preprint2014arXiv

Bipolar switching in an orthogonal spin transfer spin valve device

We demonstrate current-induced bipolar switching in in-plane magnetized spin-valve devices that incorporate a perpendicularly magnetized spin polarizing layer. Further, hysteretic transitions into a state with intermediate resistance occur at high currents, again for both current polarities. These transitions are shown to be consistent with a macrospin model that considers a spin-polarized current that is tilted with respect to the free layer plane, due to the presence of spin-transfer torque from the polarizing layer. These unique switching characteristics, which have their origin in the noncollinear layer magnetizations, are of interest for magnetic random access memory and spin-torque oscillator devices.