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Researcher profile

Gennady B. Sushko

Gennady B. Sushko contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
physics.acc-phphysics.class-phphysics.comp-ph

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Published work

2 published item(s)

preprint2022arXiv

Atomistic modelling of the channeling process with radiation reaction force included

Methodology is developed that incorporates the radiation reaction force into the relativistic molecular dynamics framework implemented in the MBN Explorer software package. The force leads to a gradual decrease in the projectile's energy E due to the radiation emission. This effect is especially strong for ultra-relativistic projectiles passing through oriented crystals where they experience the action of strong electrostatic fields as has been shown in recent experiments. A case study has been carried out for the initial approbation of the methodology developed. Simulations of the processes of planar channeling and photon emission have been performed for 150 GeV positrons in a 200 microns thick single oriented Si(110) crystal. Several regimes for the decrease in E have been established and characterized. Further steps in developing the code to include the necessary quantum corrections are identified and possible algorithmic modifications are proposed.

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preprint2013arXiv

Simulation of Ultra-Relativistic Electrons and Positrons Channeling in Crystals with MBN Explorer

A newly developed code, implemented as a part of the \MBNExplorer package \cite{MBN_ExplorerPaper,MBN_ExplorerSite} to simulate trajectories of an ultra-relativistic projectile in a crystalline medium, is presented. The motion of a projectile is treated classically by integrating the relativistic equations of motion with account for the interaction between the projectile and crystal atoms. The probabilistic element is introduced by a random choice of transverse coordinates and velocities of the projectile at the crystal entrance as well as by accounting for the random positions of the atoms due to thermal vibrations. The simulated trajectories are used for numerical analysis of the emitted radiation. Initial approbation and verification of the code have been carried out by simulating the trajectories and calculating the radiation emitted by $\E=6.7$ GeV and $\E=855$ MeV electrons and positrons in oriented Si(110) crystal and in amorphous silicon. The calculated spectra are compared with the experimental data and with predictions of the Bethe-Heitler theory for the amorphous environment.

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