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Andrei V. Korol

Andrei V. Korol contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2026arXiv

Influence of bending parameters on crystalline undulator radiation peak stability for 530 MeV positron channelling

We investigate the stability of crystalline undulator radiation (CUR) peaks emitted by 530 MeV positron channelling in periodically bent C(110) crystals with varying bending amplitudes and bending periods. Relativistic molecular dynamics simulations were performed to quantify how these parameters affect the intensity and position of the CUR peak. The continuous potential approximation was used to identify isolines of constant peak energy, providing a reference for regions of spectral stability. MD results show that increasing the bending amplitude shifts the CUR peak to lower photon energies, while decreasing the period shifts it to higher energies, with both trends accompanied by enhanced dechannelling. For crystal parameters similar to recent experiments conducted at the MAinz MIkrotron (MAMI), the simulated CUR peak appears near 0.515 MeV. These results demonstrate that the CUR peak remains stable across a broad range of bending amplitudes and periods, establishing estimates of manufacturing tolerances for the design of gamma-ray crystal-based light sources.

preprint2022arXiv

Atomistic modelling of the channeling process with radiation reaction force included

Methodology is developed that incorporates the radiation reaction force into the relativistic molecular dynamics framework implemented in the MBN Explorer software package. The force leads to a gradual decrease in the projectile's energy E due to the radiation emission. This effect is especially strong for ultra-relativistic projectiles passing through oriented crystals where they experience the action of strong electrostatic fields as has been shown in recent experiments. A case study has been carried out for the initial approbation of the methodology developed. Simulations of the processes of planar channeling and photon emission have been performed for 150 GeV positrons in a 200 microns thick single oriented Si(110) crystal. Several regimes for the decrease in E have been established and characterized. Further steps in developing the code to include the necessary quantum corrections are identified and possible algorithmic modifications are proposed.

preprint2019arXiv

Channeling of electrons and positrons in straight and periodically bent diamond(110) crystals

In this paper we present the results of a systematic numerical analysis of the channeling properties of electrons and positrons in oriented straight and periodically bent diamond(110) crystals. We analyse dependence of the intensity of the radiation emitted on the projectile energy as well as on the bending amplitude. The analysis presented is based on the grounds of accurate numerical simulations of the channeling process. The simulation parameters, such as the crystal orientation, thickness and bending parameters of the crystals as well as the energy of the projectiles, were chosen to match those used in past and ongoing experiments. The peculiarities which appear in the radiation spectra are attributed to the interplay of various radiation mechanisms. The analysis performed can be used to predict and explain future experimental results.

preprint2013arXiv

Simulation of Ultra-Relativistic Electrons and Positrons Channeling in Crystals with MBN Explorer

A newly developed code, implemented as a part of the \MBNExplorer package \cite{MBN_ExplorerPaper,MBN_ExplorerSite} to simulate trajectories of an ultra-relativistic projectile in a crystalline medium, is presented. The motion of a projectile is treated classically by integrating the relativistic equations of motion with account for the interaction between the projectile and crystal atoms. The probabilistic element is introduced by a random choice of transverse coordinates and velocities of the projectile at the crystal entrance as well as by accounting for the random positions of the atoms due to thermal vibrations. The simulated trajectories are used for numerical analysis of the emitted radiation. Initial approbation and verification of the code have been carried out by simulating the trajectories and calculating the radiation emitted by $\E=6.7$ GeV and $\E=855$ MeV electrons and positrons in oriented Si(110) crystal and in amorphous silicon. The calculated spectra are compared with the experimental data and with predictions of the Bethe-Heitler theory for the amorphous environment.