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Ganesh C. Paul

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Published work

3 published item(s)

preprint2020arXiv

Higher Order Topological Insulator via Periodic Driving

We theoretically investigate a periodically driven semimetal based on a square lattice. The possibility of engineering both Floquet Topological Insulator featuring Floquet edge states and Floquet higher order topological insulating phase, accommodating topological corner modes has been demonstrated starting from the semimetal phase, based on Floquet Hamiltonian picture. Topological phase transition takes place in the bulk quasi-energy spectrum with the variation of the drive amplitude where Chern number changes sign from $+1$ to $-1$. This can be attributed to broken time-reversal invariance ($\mathcal{T}$) due to circularly polarized light. When the discrete four-fold rotational symmetry ($\mathcal{C}_4$) is also broken by adding a Wilson mass term along with broken $\mathcal{T}$, higher order topological insulator (HOTI), hosting in-gap modes at all the corners, can be realized. The Floquet quadrupolar moment, calculated with the Floquet states, exhibits a quantized value of $ 0.5$ (modulo 1) identifying the HOTI phase. We also show the emergence of the {\it{dressed corner modes}} at quasi-energy $ω/2$ (remnants of zero modes in the quasi-static high frequency limit), where $ω$ is the driving frequency, in the intermediate frequency regime.

preprint2016arXiv

Thermal conductance by Dirac fermions in a normal-insulator-superconductor junction of silicene

We theoretically study the properties of thermal conductance in a normal-insulator-superconductor junction of silicene for both thin and thick barrier limit. We show that while thermal conductance displays the conventional exponential dependence on temperature, it manifests a nontrivial oscillatory dependence on the strength of the barrier region. The tunability of the thermal conductance by an external electric field is also investigated. Moreover, we explore the effect of doping concentration on thermal conductance. In the thin barrier limit, the period of oscillations of the thermal conductance as a function of the barrier strength comes out be $π/2$ when doping concentration in the normal silicene region is small. On the other hand, the period gradually converts to $π$ with the enhancement of the doping concentration. Such change of periodicity of the thermal response with doping can be a possible probe to identify the crossover from specular to retro Andreev reflection in Dirac materials. In the thick barrier limit, thermal conductance exhibits oscillatory behavior as a function of barrier thickness $d$ and barrier height $V_0$ while the period of oscillation becomes $V_0$ dependent. However, amplitude of the oscillations, unlike in tunneling conductance, gradually decays with the increase of barrier thickness for arbitrary height $V_0$ in the highly doped regime. We discuss experimental relevance of our results.

preprint2016arXiv

Transport and noise properties of a normal metal-superconductor-normal metal junction with mixed singlet and chiral triplet pairings

We study transport and zero frequency shot noise properties of a normal metal-superconductor-normal metal (NSN) junction, with the superconductor having mixed singlet and chiral triplet pairings. We show that in the subgapped regime when the chiral triplet pairing amplitude dominates over that of the singlet, a resonance phenomena emerges out at zero energy where all the quantum mechanical scattering probabilities acquire a value of 0.25. At the resonance, crossed Andreev reflection mediating through such junction, acquires a zero energy peak. This reflects as a zero energy peak in the conductance as well depending on the doping concentration. We also investigate shot noise for this system and show that shot noise cross-correlation is negative in the subgapped regime when the triplet pairing dominates over the singlet one. The latter is in sharp contrast to the positive shot noise obtained when the singlet pairing is the dominating one.