Source author record

Gabriel Autès

Gabriel Autès appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

cond-mat.mes-hall cond-mat.mtrl-sci cond-mat.str-el cond-mat.dis-nn

Catalog footprint

What is connected

6works

4topics

4close collaborators

Actions

Connect this record

Open graph Browse works

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

preprint2018arXiv

Topological Fermi-arc surface resonances in bcc iron

The topological classification of matter has been extended to include semimetallic phases characterized by the presence of topologically protected band degeneracies. In Weyl semimetals, the foundational gapless topological phase, chiral degeneracies are isolated near the Fermi level and give rise to the Fermi-arc surface states. However, it is now recognized that chiral degeneracies are ubiquitous in the band structures of systems with broken spatial inversion ($\mathcal{P}$) or time-reversal ($\mathcal{T}$) symmetry. This leads to a broadly defined notion of topological metals, which implies the presence of disconnected Fermi surface sheets characterized by non-zero Chern numbers inherited from the enclosed chiral degeneracies. Here, we address the possibility of experimentally observing surface-related signatures of chiral degeneracies in metals. As a representative system we choose bcc iron, a well-studied archetypal ferromagnetic metal with two nontrivial electron pockets. We find that the (110) surface presents arc-like resonances attached to the topologically nontrivial electron pockets. These Fermi-arc resonances are due to two different chiral degeneracies, a type-I elementary Weyl point and a type-II composite (Chern numbers $\pm 2$) Weyl point, located at slightly different energies close to the Fermi level. We further show that these surface resonances can be controlled by changing the orientation of magnetization, eventually being eliminated following a topological phase transition. Our study thus shows that the intricate Fermi-arc features can be observed in materials as simple as ferromagnetic iron, and are possibly very common in polar and magnetic materials broadly speaking. Our study also provides methodological guidelines to identifying Fermi-arc surface states and resonances, establishing their topological origin and designing control protocols.

preprint2016arXiv

A Novel Quasi-One-Dimensional Topological Insulator in Bismuth Iodide $β$-Bi$_4$I$_4$

Recent progress in the field of topological states of matter(1,2) has largely been initiated by the discovery of bismuth and antimony chalcogenide bulk topological insulators (TIs)(3-6), followed by closely related ternary compounds(7-16) and predictions of several weak TIs(17-19). However, both the conceptual richness of Z$_2$ classification of TIs as well as their structural and compositional diversity are far from being fully exploited. Here, a new Z$_2$ topological insulator is theoretically predicted and experimentally confirmed in the $β$-phase of quasi-one-dimensional bismuth iodide Bi$_4$I$_4$. The electronic structure of $β$-Bi$_4$I$_4$, characterized by Z$_2$ invariants (1;110), is in proximity of both the weak TI phase (0;001) and the trivial insulator phase (0;000). Our angle-resolved photoemission spectroscopy measurements on the (001) surface reveal a highly anisotropic band-crossing feature located at the point of the surface Brillouin zone and showing no dispersion with the photon energy, thus being fully consistent with the theoretical prediction.

preprint2016arXiv

Localized electronic states at grain boundaries on the surface of graphene and graphite

Recent advances in large-scale synthesis of graphene and other 2D materials have underscored the importance of local defects such as dislocations and grain boundaries (GBs), and especially their tendency to alter the electronic properties of the material. Understanding how the polycrystalline morphology affects the electronic properties is crucial for the development of applications such as flexible electronics, energy harvesting devices or sensors. We here report on atomic scale characterization of several GBs and on the structural-dependence of the localized electronic states in their vicinity. Using low temperature scanning tunneling microscopy (STM) and spectroscopy (STS), together with tight binding and ab initio numerical simulations we explore GBs on the surface of graphite and elucidate the interconnection between the local density of states (LDOS) and their atomic structure. We show that the electronic fingerprints of these GBs consist of pronounced resonances which, depending on the relative orientation of the adjacent crystallites, appear either on the electron side of the spectrum or as an electron-hole symmetric doublet close to the charge neutrality point. These two types of spectral features will impact very differently the transport properties allowing, in the asymmetric case to introduce transport anisotropy which could be utilized to design novel growth and fabrication strategies to control device performance.

preprint2014arXiv

Electronic Transport in Graphene with Aggregated Hydrogen Adatoms

Hydrogen adatoms and other species covalently bound to graphene act as resonant scattering centers affecting the electronic transport properties and inducing Anderson localization. We show that attractive interactions between adatoms on graphene and their diffusion mobility strongly modify the spatial distribution, thus fully eliminating isolated adatoms and increasing the population of larger size adatom aggregates. Our scaling analysis shows that such aggregation of adatoms increases conductance by up to several orders of magnitude and results in significant extension of the Anderson localization length in the strong localization regime. We introduce a simple definition of the effective adatom concentration $x^\star$ , which describes the transport properties of both random and correlated distributions of hydrogen adatoms on graphene across a broad range of concentrations.

preprint2013arXiv

Engineering Quantum Spin Hall Effect in Graphene Nanoribbons via Edge Functionalization

Kane and Mele predicted that in presence of spin-orbit interaction graphene realizes the quantum spin Hall state. However, exceptionally weak intrinsic spin-orbit splitting in graphene ($\approx 10^{-5}$ eV) inhibits experimental observation of this topological insulating phase. To circumvent this problem, we propose a novel approach towards controlling spin-orbit interactions in graphene by means of covalent functionalization of graphene edges with functional groups containing heavy elements. Proof-of-concept first-principles calculations show that very strong spin-orbit coupling can be induced in realistic models of narrow graphene nanoribbons with tellurium-terminated edges. We demonstrate that electronic bands with strong Rashba splitting as well as the quantum spin Hall state spanning broad energy ranges can be realized in such systems. Our work thus opens up new horizons towards engineering topological electronic phases in nanostructures based on graphene and other materials by means of locally introduced spin-orbit interactions.

preprint2012arXiv

Controlling edge states in the Kane-Mele model via edge chirality

We investigate the dependence of band dispersion of the quantum spin Hall effect (QSHE) edge states in the Kane-Mele model on crystallographic orientation of the edges. Band structures of the one-dimensional honeycomb lattice ribbons show the presence of the QSHE edge states at all orientations of the edges given sufficiently strong spin-orbit interactions. We find that the Fermi velocities of the QSHE edge-state bands increase monotonically when the edge orientation changes from zigzag (chirality angle $θ= 0^\circ$) to armchair ($θ= 30^\circ$). We propose a simple analytical model to explain the numerical results.