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Researcher profile

G. Wachter

G. Wachter contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sci

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Published work

2 published item(s)

preprint2013arXiv

Modelling surface restructuring by slow highly charged ions

We theoretically investigate surface modifications on alkaline earth halides due to highly charged ion impact, focusing on recent experimental evidence for both etch pit and nano-hillock formation on CaF2 [A. El-Said et al, PRL 109, 117602 (2012)]. We discuss mechanisms for converting the projectile potential and kinetic energies into thermal energy capable of changing the surface structure. A proof-of-principle classical molecular dynamics simulation suggests the existence of two thresholds which we associate with etch pit and nano-hillock formation in qualitative agreement with experiment.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Phase diagram for nanostructuring CaF$_2$ surfaces by slow highly charged ions

Impacts of individual slow highly charged ions on alkaline earth halide and alkali halide surfaces create nano-scale surface modifications. For different materials and impact energies a wide variety of topographic alterations have been observed, ranging from regularly shaped pits to nano-hillocks. We present experimental evidence for a second threshold for defect creation supported by simulations involving the initial electronic heating and subsequent molecular dynamics. From our findings a unifying phase diagram underlying these diverse observations can be derived. By chemically etching of CaF$_2$ samples after irradiation with slow highly charged ions both above and below the potential energy threshold for hillock formation another threshold exists above which triangular pits are observed after etching. This threshold depends on both the potential and kinetic energies of the incident ion. Simulations indicate that this second threshold is associated with the formation of defect aggregates in the topmost layers of CaF$_2$.

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