Source author record

G. Seifert

G. Seifert appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

cond-mat cond-mat.mtrl-sci cond-mat.soft physics.atm-clus

Catalog footprint

What is connected

3works

4topics

4close collaborators

Actions

Connect this record

Open graph Browse works

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

preprint2013arXiv

Orientation dependence of energy absorption and relaxation dynamics of $\text{C}_{60}$ in fs-laser pulses: How round is $\text{C}_{60}$?

By means of non-adiabatic quantum molecular dynamics it is shown, that the amount of energy deposited into $\text{C}_{60}$ by a short laser field strongly depends on the molecular orientation with respect to the laser polarization direction. In consequence, subsequent electron-vibration coupling leads to different nuclear relaxation mechanisms with mainly three pathways: (1) excitation of giant $\text{A}_g(1)$ modes ("breathing"), (2) formation of deformed cage-like complexes ("isomers"), fragmentation predominantly into two large pieces ("fission"). The results are in accord with and explain nicely already existing experimental data. Future experiments are proposed to confirm the detailed predictions.

preprint2009arXiv

Electronic transport properties through thiophenes on switchable domains

The electronic transport of electrons and holes through stacks of $α$,$\ome ga$-dicyano-$β$,$β$'-dibutyl- quaterthiophene (DCNDBQT) as part of a nov el organic ferroic field-effect transistor (OFFET) is investigated. The novel ap plication of a ferroelectric instead of a dielectric substrate provides the poss ibility to switch bit-wise the ferroelectric domains and to employ the polarizat ion of these domains as a gate field in an organic semiconductor. A device conta ining very thin DCNDBQT films of around 20 nm thickness is intended to be suitab le for logical as well as optical applications. We investigate the device proper ties with the help of a phenomenological model called multilayer organic light-e mitting diodes (MOLED), which was extended to transverse fields. The results sho wed, that space charge and image charge effects play a crucial role in these org anic devices.

preprint1994arXiv

Ab initio simulations of liquid NaSn alloys: Zintl anions and network formation

Using the Car-Parrinello technique, ab initio molecular dynamics simulations are performed for liquid NaSn alloys in five different compositions (20, 40, 50, 57 and 80 % sodium). The obtained structure factors agree well with the data from neutron scattering experiments. The measured prepeak in the structure factor is reproduced qualitatively for most compositions. The calculated and measured positions of all peaks show the same trend as function of the composition.\\ The dynamic simulations also yield information about the formation and stability of Sn$_4$ clusters (Zintl anions) in the liquid. In our simulations of compositions with 50 and 57 % sodium we observe the formation of networks of tin atoms. Thus, isolated tin clusters are not stable in such liquids. For the composition with 20 % tin only isolated atoms or dimers of tin appear, ``octet compounds'' of one Sn atom surrounded by 4 Na atoms are not observed.