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Researcher profile

G. S. Taki

G. S. Taki contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-sciphysics.app-ph

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Published work

2 published item(s)

preprint2020arXiv

Copper Thin Film Deposition by An Indigenous Unbalanced Type DC Magnetron Sputtering System

Copper deposition has been carried out at various time span on glass slide and silicon substrate by using indigenously developed unbalanced type DC magnetron sputtering system. The main objective of this work is to study the crystalline structure of the deposited materials and also to calculate the crystallite grain size. As a transition metal, Copper nano-particles and structures have several utilities in the field of photo-catalytic and sensor applications. Such structures are utilized to provide free electrons that enhance optical and electrical properties of the photo-catalytic sensor mate-rials. These nano-catalysts enhance deposition rate and nucleation of graphitic Carbon Nitride, a popular photo-catalyst. In this work, synthesized Copper thin film has been characterized by using X-Ray Fluorescence and X-Ray Diffractometer.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Correlation between defect and magnetism of Ar9+ implanted and un-implanted Zn0.95Mn0.05O thin films suitable for electronic application

Sol-gel derived thin films of Zn0.95Mn0.05O have been implanted with Ar9+ ions with doses viz. 5x10e14 ions/cm2 (low), 1x10e15 ions/cm2 (intermediate) and 1x10e16 ions/cm2 (high). Structural, morphological, optical and magnetic properties of the films have been investigated. Structural study confirmed single phase, wurtzite structure of the films. The absence of impurity phase has been confirmed from several measurements. Ion implantation induces a large concentration of point defects into the films as identified from optical study. All films exhibit well above room temperature (RT) intrinsic ferromagnetism (FM) as evidenced from field and temperature dependent magnetization measurements. The magnetization attains the maximum value for high dose of Ar9+ ion implanted film. It shows RT saturation magnetization (MS) value of 0.69emu/gm. The observed FM has been correlated with proportion of intrinsic defects, such as, zinc and oxygen vacancies and the values of MS. Defect induced formation of bound magnetic polaron actually controls the FM. The utility of these films in transparent spin electronic device has also been exhibited.

0 citations0 reviewsNo code linkedOpen access