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G. Pozina

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Published work

3 published item(s)

preprint2015arXiv

III-nitride tunable cup-cavities supporting quasi whispering gallery modes from ultraviolet to near infrared

Rapidly developing nanophotonics needs microresonators for different spectral ranges, formed by chip-compatible technologies. In addition, the tunable ones are in greatest demand. Here, we present epitaxial site--controlled III--nitride cup--cavities which can operate from ultraviolet to near--infrared, supporting quasi whispering gallery modes up to room temperature. In these cavities, the refractive index variation near an absorption edge causes the remarkable effect of mode switching, which is accompanied by the change of spatial intensity distribution, concentration of light efficiently into a subwavelength volume, and emission of terahertz photons. At a distance from the edge, the mode-related narrow emission lines have stable energies and widths at different temperatures. Moreover, their energies are identical in the large 'ripened' monocrystal cavities. Our results shed light on the mode behavior in the semiconductor cavities and open the way for single--growth--run manufacturing the devices comprising an active region and a cavity with tunable mode frequencies.

preprint2011arXiv

Delay and distortion of slow light pulses by excitons in ZnO

Light pulses propagating through ZnO undergo distortions caused by both bound and free excitons. Numerous lines of bound excitons dissect the pulse and induce slowing of light around them, to the extend dependent on their nature. Exciton-polariton resonances determine the overall pulse delay and attenuation. The delay time of the higher-energy edge of a strongly curved light stripe approaches 1.6 ns at 3.374 eV with a 0.3 mm propagation length. Modelling the data of cw and time-of-flight spectroscopies has enabled us to determine the excitonic parameters, inherent for bulk ZnO. We reveal the restrictions on these parameters induced by the light attenuation, as well as a discrepancy between the parameters characterizing the surface and internal regions of the crystal.

preprint2011arXiv

Excitonic parameters of GaN studied by time-of-flight spectroscopy

We refine excitonic parameters of bulk GaN by means of time-of-flight spectroscopy of light pulses propagating through crystals. The influence of elastic photon scattering is excluded by using the multiple reflections of the pulses from crystal boundaries. The shapes of these reflexes in the time-energy plane depict the variation of the group velocity induced by excitonic resonances. Modeling of the shapes, as well as other spectra, shows that a homogeneous width of the order of 10 μeV characterizes the exciton-polariton resonances within the crystal. The oscillator strength of A and B exciton-polaritons is determined as 0.0022 and 0.0016, respectively.