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Researcher profile

G. Mihály

G. Mihály contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.str-elcond-mat.supr-con

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Published work

4 published item(s)

preprint2013arXiv

GHz Operation of Nanometer-Scale Metallic Memristors: Highly Transparent Conductance Channels in Ag$_{2}$S Devices

The nonlinear transport properties of nanometer-scale junctions formed between an inert metallic tip and an Ag film covered by a thin Ag$_{2}$S layer are investigated. Suitably prepared samples exhibit memristive behavior with technologically optimal ON and OFF state resistances yielding to resistive switching on the nanosecond time scale. Utilizing point contact Andreev reflection spectroscopy we studied the nature of electron transport in the active volume of the memristive junctions showing that both the ON and OFF states correspond to truly nanometer scale, highly transparent metallic channels. Our results demonstrate the merits of Ag$_{2}$S nanojunctions as nanometer-scale memory cells with GHz operation frequencies.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

From stochastic single atomic switch to nanoscale resistive memory device

Solid state ionic conductors are good candidates for the next generation of nonvolatile computer memory elements. Such devices have to show reproducible resistance switching at reasonable voltage and current values even if scaled down to the nanometer sizes. Here we study the switching characteristics of nanoscale junctions created between a tungsten tip and a silver film covered by a thin ionic conductor layer. Atomic-sized junctions show spectacular current induced switching characteristics, but both the magnitude of the switching voltage and the direction of the switching vary randomly for different junctions. In contrast, for somewhat larger junctions with diameters of a few nanometers a well defined, reproducible switching behavior is observed which is associated with the formation and destruction of nanoscale channels in the ionic conductor surface layer. Our results define a low size limit of 3 nm for reliable ionic nano-switches, which is well below the resolution of recent lithographic techniques.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Transition from coherent mesoscopic single particle transport to proximity Josephson-current

The transport through a metal-superconductor interface is governed by a special charge conversion process, the Andreev reflection, where each incident electron drags another electron with itself to form a Cooper pair. At the normal side a hole is left behind dressed by superconducting correlations. For a low transparency interface the simultaneous transfer of two charges is strongly suppressed leading to a reduced conductance. Here we demonstrate that this reduced conductance can be turned to an infinite one by tuning the nanoscale geometry. Creating variable size nanojunctions between a thin metallic film and a superconducting tip we study how multiple phase-coherent scatterings enhance the superconducting correlations at the normal side. By increasing the coherent volume of carriers initially the transmission through the interface is continuously enhanced. However, as the phase-coherent volume reaches the opposite surface of the thin film a resonator is formed, and a robust transition is induced due to Cooper pair condensation.

0 citations0 reviewsNo code linkedOpen access
preprint2003arXiv

Pressure induced suppression of the singlet insulator phase in BaVS$_3$: infrared optical study

The metal-insulator (MI) transition in BaVS$_3$ has been studied at ambient pressure and under hydrostatic pressure up to $p=26 $kbar in the frequency range of $20-3000 $cm$^{-1}$. The charge gap determined from the optical reflectivity is enhanced, $Δ_{ch}(p)/k_BT_{MI}(p)\sim 12$. This ratio is independent of pressure indicating that the character of the transition does not vary along the $p-T$ phase boundary. Above the critical pressure, $p_{cr}\sim20$ kbar, metallic spectra were recorded in the whole temperature range, as expected from the shape of the phase diagram. Our results exclude the opening of a pseudogap above $T_{MI}$ at any pressure. Below $T_{MI}$ an unusually strong temperature dependence of the charge gap was observed, resulting in a $Δ_{ch}(T)$ deviating strongly from the mean field-like variation of the structural order parameter.

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