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G. Malcolm Stocks

G. Malcolm Stocks appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-elphysics.comp-phquant-ph

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Published work

9 published item(s)

preprint2020arXiv

Extreme Fermi surface smearing in a maximally disordered concentrated solid solution

We show that the Fermi surface can survive the presence of extreme compositional disorder in the equiatomic alloy Ni$_{0.25}$Fe$_{0.25}$Co$_{0.25}$Cr$_{0.25}$. Our high-resolution Compton scattering experiments reveal a Fermi surface which is smeared across a significant fraction of the Brillouin zone (up to 40\% of $\frac{2π}{a}$). The extent of this smearing and its variation on and between different sheets of the Fermi surface has been determined, and estimates of the electron mean-free-path and residual resistivity have been made by connecting this smearing with the coherence length of the quasiparticle states.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

A full-potential approach to the relativistic single-site Green's function

One major purpose of studying the single-site scattering problem is to obtain the scattering matrices and differential equation solutions indispensable to multiple scattering theory (MST) calculations. On the other hand, the single-site scattering itself is also appealing because it reveals the physical environment experienced by electrons around the scattering center. In this paper we demonstrate a new formalism to calculate the relativistic full-potential single-site Green's function. We implement this method to calculate the single-site density of states and electron charge densities. The code is rigorously tested and with the help of Krein's theorem, the relativistic effects and full potential effects in group V elements and noble metals are thoroughly investigated.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Distribution of Formation and migration energies of point defects in concentrated solid-solution alloys: Ni_{0.5}Co_{0.5}, Ni_{0.5}Fe_{0.5}, Ni_{0.8}Fe_{0.2} and Ni_{0.8}Cr_{0.2}

Using ab initio calculations and special quasirandom structures, we have characterized the distribution of defect formation energy and migration barrier in Ni-based solid-solution alloys: Ni_{0.5}Co_{0.5}, Ni_{0.5}Fe_{0.5}, Ni_{0.8}Fe_{0.2} and Ni_{0.8}Cr_{0.2}. As defect formation energies depend sensitively on elemental chemical potential, we have developed a computationally efficient method for determining it which takes into account the global composition and local short-range order. We find that Fe has the biggest alloy effects for Ni among these four elements. Our results show that the distribution of migration energies for vacancies and interstitial have a region of overlap, which will facilitate the recombination between them.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Quantum Critical Behavior in a Concentrated Ternary Solid Solution

Quantum critical behavior has been associated with some of the most exotic emergent states of matter including high-temperature superconductivity. Much of the research into quantum critical point (QCP) physics has been hampered by the lack of model systems simple enough to be analyzed by theory. Here, we show that the concentrated solid solution fcc alloys, including the so-called high-entropy alloys, are ideal model systems to study the effects of chemical disorder on emergent properties near a quantum critical region. The face centered cubic (fcc) alloy NiCoCrx with x near 1 is found to be close to the Cr concentration where the ferromagnetic transition temperature, Tc, goes to 0. Near this composition these alloys exhibit a resistivity linear in temperature to 2 K, a linear magnetoresistance, an excess -TlnT contribution to the low temperature heat capacity and excess low temperature entropy. All of the low temperature electrical, magnetic and thermodynamic properties of the alloys with compositions near x near 1 are not typical of a Fermi liquid and suggest strong magnetic fluctuations associated with a quantum critical region. The limit of extreme chemical disorder in these simple fcc materials thus provides a novel and unique platform to study quantum critical behavior in a highly tunable system.

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preprint2016arXiv

Reinventing atomistic magnetic simulations with spin-orbit coupling

We propose a powerful extension to combined molecular and spin dynamics that fully captures the coupling between the atomic and spin subsystems via spin-orbit interactions. Its foundation is the inclusion of the local magnetic anisotropies that arise as a consequence of the lattice symmetry breaking due to phonons or defects. We demonstrate that our extension enables the exchange of angular momentum between the atomic and spin subsystems, which is critical to the challenges arising in the study of fluctuations and non-equilibrium processes in complex, natural, and engineered magnetic materials.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Spin-transfer torque induced spin waves in antiferromagnetic insulators

We explore the possibility of exciting spin waves in insulating antiferromagnetic films by injecting spin current at the surface. We analyze both magnetically compensated and uncompensated interfaces. We find that the spin current induced spin-transfer torque can excite spin waves in insulating antiferromagnetic materials and that the chirality of the excited spin wave is determined by the polarization of the injected spin current. Furthermore, the presence of magnetic surface anisotropy can greatly increase the accessibility of these excitations.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Two dimensional topological insulators with tunable band gaps: HgTe and HgSe monolayers

Employing ab initio electronic calculations, we propose a new type of two-dimensional (2D) topological insulator (TI), monolayer (ML) low buckled (LB) mercury telluride (HgTe) and mercury selenide (HgSe), with tunable band gaps. Monolayer LB HgTe undergoes a transition to a topological nontrivial phase under the appropriate in-plane tensile strain (ε > 2.6%) due to the combination effects of strain and spin orbital coupling (SOC). Under the 2.6%< ε <4.2% tensile strain, the band inversion and topological nontrivial gap are induced by the SOC. For ε >4.2%, the band inversion is already realized by strain but the topological gap is induced by SOC. The band gap of monolayer LB HgTe TI phase can be tuned over a wide range from 0 eV to 0.20 eV as the tensile strain increases from 2.6% to 7.4%. Similarly, the topological phase transition of monolayer LB HgSe is induced by strain and SOC as the strain ε >3.1%. The topological band gap can be 0.05 eV as the strain increases to about 4.6%. The large band gap of 2D LB HgTe and HgSe monolayers make this type of material suitable for practical applications at room-temperature.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Strain tuning of topological band order in cubic semiconductors

We theoretically explore the possibility of tuning the topological order of cubic diamond/zinc-blende semiconductors with external strain. Based on the tight-binding model, we analyze the evolution of the cubic semiconductor band structure under hydrostatic or biaxial lattice expansion, by which a generic guiding principle is established that lattice \emph{expansion} can induce a topological phase transition of small band-gap cubic semiconductors via a band inversion, and further breaking of the cubic symmetry leads to a topological insulating phase. Using density functional theory calculations, we demonstrate that a prototype topological trivial semiconductor, InSb, is converted to a nontrivial topological semiconductor with a 2%-3% biaxial lattice expansion.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Half-Heusler Compounds as a New Class of Three-Dimensional Topological Insulators

Using first-principles calculations within density functional theory, we explore the feasibility of converting ternary half-Heusler compounds into a new class of three-dimensional topological insulators (3DTI). We demonstrate that the electronic structure of unstrained LaPtBi as a prototype system exhibits distinct band-inversion feature. The 3DTI phase is realized by applying a uniaxial strain along the [001] direction, which opens a bandgap while preserving the inverted band order. A definitive proof of the strained LaPtBi as a 3DTI is provided by directly calculating the topological Z2 invariants in systems without inversion symmetry. We discuss the implications of the present study to other half-Heusler compounds as 3DTI, which, together with the magnetic and superconducting properties of these materials, may provide a rich platform for novel quantum phenomena.

0 citations0 reviewsNo code linkedOpen access