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G. M. Vanacore

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cond-mat.mes-hall cond-mat.mtrl-sci physics.optics quant-ph

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preprint2022arXiv

Ultrafast Transverse Modulation of Free Electrons by Interaction with Shaped Optical Fields

Spatio-temporal shaping of electron beams is a bold frontier in electron microscopy, enabling new routes toward spatial-resolution enhancement, selective probing, low-dose imaging and faster data acquisition. Over the last decade, shaping methods evolved from passive phase plates to low-speed electrostatic and magnetostatic displays. Recently, higher shaping speed and flexibility have become feasible by the advent of ultrafast electron microscopy, embodying a swift change of paradigm that relies on using light to control free electrons. Here, we experimentally demonstrate that arbitrary transverse modulation of electron beams is possible without the need for designing and fabricating complicated electron-optics elements or material nanostructures, but rather resorting to shaping light beams reflected from a planar thin film. We demonstrate arbitrary transverse modulation of electron wavepackets via inelastic interaction with a shaped ultrafast light field controlled by an external spatial light modulator (SLM). We illustrate this method by generating Hermite-Gaussian (HG) electron beams with HG10 and HG01 symmetry and discuss their possible use in enhancing the imaging contrast of microscopic features. Relative to current schemes, our approach adopting an external SLM dramatically widens the range of patterns that can be imprinted on the electron wave function and makes electron shaping a much easier task to perform.

preprint2020arXiv

Observation of a phonon avalanche in highly photoexcited hybrid perovskite single crystals

In hybrid lead halide perovskites, the coupling between photogenerated charges and the ionic degrees of freedom plays a crucial role in defining the intrinsic limit of carrier mobility and lifetime. However, direct investigation of this fundamental interaction remains challenging because its relevant dynamics occur on ultrashort spatial and ultrafast temporal scales. Here, we unveil the coupled electron-lattice dynamics of a CH3NH3PbI3 single crystal upon intense photoexcitation through a unique combination of ultrafast electron diffraction, time-resolved photoelectron spectroscopy, and time-dependent ab initio calculations. We observe the structural signature of a hot-phonon bottleneck effect that prevents rapid carrier relaxation, and we uncover a phonon avalanche mechanism responsible for breaking the bottleneck. The avalanche involves a collective emission of low-energy phonons - mainly associated with the organic sub-lattice - that proceeds in a regenerative manner and correlates with the accumulation and confinement of photocarriers at the crystal surface. Our results indicate that in hybrid perovskites carrier transport and spatial confinement are key to controlling the electron-phonon interaction and their rational engineering is relevant for future applications in optoelectronic devices.

preprint2013arXiv

Hydrostatic strain enhancement in laterally confined SiGe nanostripes

Strain-engineering in SiGe nanostructures is fundamental for the design of optoelectronic devices at the nanoscale. Here we explore a new strategy, where SiGe structures are laterally confined by the Si substrate, to obtain high tensile strain avoiding the use of external stressors, and thus improving the scalability. Spectro-microscopy techniques, finite element method simulations and ab initio calculations are used to investigate the strain state of laterally confined Ge-rich SiGe nano-stripes. Strain information is obtained by tip enhanced Raman spectroscopy with an unprecedented lateral resolution of ~ 30 nm. The nano-stripes exhibit a large tensile hydrostatic strain component, which is maximum at the center of the top free surface, and becomes very small at the edges. The maximum lattice deformation is larger than the typical values of thermally relaxed Ge/Si(001) layers. This strain enhancement originates from a frustrated relaxation in the out-of-plane direction, resulting from the combination of the lateral confinement induced by the substrate side walls and the plastic relaxation of the misfit strain in the (001) plane at the SiGe/Si interface. The effect of this tensile lattice deformation at the stripe surface is probed by work function mapping, performed with a spatial resolution better than 100 nm using X-ray photoelectron emission microscopy. The nano-stripes exhibit a positive work function shift with respect to a bulk SiGe alloy, quantitatively confirmed by electronic structure calculations of tensile strained configurations. The present results have a potential impact on the design of optoelectronic devices at a nanometer length scale.