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G. M. Sipahi

G. M. Sipahi contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2014arXiv

Interband polarized absorption in InP polytypic superlattices

Recent advances in growth techniques have allowed the fabrication of semiconductor nanostructures with mixed wurtzite/zinc-blende crystal phases. Although the optical characterization of these polytypic structures is well eported in the literature, a deeper theoretical understanding of how crystal phase mixing and quantum confinement change the output linear light polarization is still needed. In this paper, we theoretically investigate the mixing effects of wurtzite and zinc-blende phases on the interband absorption and in the degree of light polarization of an InP polytypic superlattice. We use a single 8$\times$8 k$\cdot$p Hamiltonian that describes both crystal phases. Quantum confinement is investigated by changing the size of the polytypic unit cell. We also include the optical confinement effect due to the dielectric mismatch between the superlattice and the vaccum and we show it to be necessary to match experimental results. Our calculations for large wurtzite concentrations and small quantum confinement explain the optical trends of recent photoluminescence excitation measurements. Furthermore, we find a high sensitivity to zinc-blende concentrations in the degree of linear polarization. This sensitivity can be reduced by increasing quantum confinement. In conclusion, our theoretical analysis provides an explanation for optical trends in InP polytypic superlattices, and shows that the interplay of crystal phase mixing and quantum confinement is an area worth exploring for light polarization engineering.

preprint2013arXiv

Systematic study of magnetic linear dichroism and birefringence in (Ga,Mn)As

Magnetic linear dichroism and birefringence in (Ga,Mn)As epitaxial layers is investigated by measuring the polarization plane rotation of reflected linearly polarized light when magnetization lies in the plane of the sample. We report on the spectral dependence of the rotation and ellipticity angles in a broad energy range of 0.12-2.7 eV for a series of optimized samples covering a wide range on Mn-dopings and Curie temperatures and find a clear blue shift of the dominant peak at energy exceeding the host material band gap. These results are discussed in the general context of the GaAs host band structure and also within the framework of the k.p and mean-field kinetic-exchange model of the (Ga,Mn)As band structure. We find a semi-quantitative agreement between experiment and theory and discuss the role of disorder-induced non-direct transitions on magneto-optical properties of (Ga,Mn)As.

preprint2012arXiv

Electronic band structure of polytypical nanowhiskers: a theoretical approach based on group theory and k$\cdot$p method

Semiconductor nanowhiskers made of III-V compounds exhibit great potential for technological applications. Controlling the growth conditions, such as temperature and diameter, it is possible to alternate between zinc blend and wurtzite crystalline phases, giving origin to the so called polytypism. This effect has great influence in the electronic and optical properties of the system, generating new forms of confinement to the carriers. A theoretical model capable to accurately describe electronic and optical properties in these polytypical nanostructures can be used to study and develop new kinds of nanodevices. In this study, we present the development of a wurtzite/zincblend polytypical model to calculate the electronic band structure of nanowhiskers based on group theory concepts and the k$\cdot$p method. Although the interest is in polytypical superlattices, the proposed model was applied to a single quantum well of InP to extract the physics of the wurtzite/zincblend polytypism. By the analysis of our results, some trends can be predicted: spatial carriers' separation, predominance of perpendicular polarization (xy plane) in the luminescence spectra and interband transition blueshifts with strain. A possible range of values for the WZ InP spontaneous polarization was suggested.

preprint2006arXiv

Spin-polarized transport in ferromagnetic multilayered semiconductor nanostructures

The occurrence of inhomogeneous spin-density distribution in multilayered ferromagnetic diluted magnetic semiconductor nanostructures leads to strong dependence of the spin-polarized transport properties on these systems. The spin-dependent mobility, conductivity and resistivity in (Ga,Mn)As/GaAs,(Ga,Mn)N/GaN, and (Si,Mn)/Si multilayers are calculated as a function of temperature, scaled by the average magnetization of the diluted magnetic semiconductor layers. An increase of the resistivity near the transition temperature is obtained. We observed that the spin-polarized transport properties changes strongly among the three materials.