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Researcher profile

G. L. Zhao

G. L. Zhao contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.other

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Published work

7 published item(s)

preprint2013arXiv

Re-examining the electronic structure of germanium: A first-principle study

We report results from an efficient, robust, ab-initio method for self-consistent calculations of electronic and structural properties of Ge. Our non-relativistic calculations employed a generalized gradient approximation (GGA) potential and the linear combination of atomic orbitals (LCAO) formalism. The distinctive feature of our computations stem from the use of Bagayoko-Zhao-Williams-Ekuma-Franklin (BZW-EF) method. Our results are in agreement with experimental ones where the latter are available. In particular, our theoretical, indirect band gap of 0.65 eV, at the experimental lattice constant of 5.66 Å, is in excellent agreement with experiment. Our predicted, equilibrium lattice constant is 5.63 Å, with a corresponding indirect band gap of 0.65 eV and a bulk modulus of 80 GPa. We also calculated the effective masses in various directions with respect to the $Γ$ point.

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preprint2012arXiv

First Principle Local Density Approximation Description of the Electronic Properties of Ferroelectric Sodium Nitrite

The electronic structure of the ferroelectric crystal, NaNO$_2$, is studied by means of first-principles, local density calculations. Our ab-initio, non-relativistic calculations employed a local density functional approximation (LDA) potential and the linear combination of atomic orbitals (LCAO). Following the Bagayoko, Zhao, Williams, method, as enhanced by Ekuma, and Franklin (BZW-EF), we solved self-consistently both the Kohn-Sham equation and the equation giving the ground state charge density in terms of the wave functions of the occupied states. We found an indirect band gap of 2.83 eV, from W to R. Our calculated direct gaps are 2.90, 2.98, 3.02, 3.22, and 3.51 eV at R, W, X, Γ, and T, respectively. The band structure and density of states show high localization, typical of a molecular solid. The partial density of states shows that the valence bands are formed only by complex anionic states. These results are in excellent agreement with experiment. So are the calculated densities of states. Our calculated electron effective masses of 1.18, 0.63, and 0.73 mo in the Γ-X, Γ-R, and Γ-W directions, respectively, show the highly anisotropic nature of this material.

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preprint2011arXiv

Comments on "Band gap and band parameters of InN and GaN from quasiparticle energy calculations based on exact-exchange density-functional theory" [Appl. Phys. Lett. 89, 161919 (2006)]

An oversight of some previous density functional calculations of the band gaps of wurtzite and cubic InN and of wurtzite GaN by Rinke et al. [Appl. Phys. Lett. 89,161919, 2006] led to an inaccurate and misleading statement relative to limitations of density functional theory (DFT) for the description of electronic properties of these materials. These comments address this statement. In particular, they show that some local density approximation (LDA) calculations have correctly described or predicted electronic and related properties of these systems [Phys. Rev. B 60, 1563, 1999; J. Appl. Phys. 96, 4297, 2004, and 97, 123708, 2005]. These successful calculations solved self-consistently the system of equations defining LDA, i.e., the Kohn-Sham equation and the equation giving the ground state charge density in terms of the wave functions of the occupied states.

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preprint2011arXiv

Comments on "Quasiparticle self-consistent GW theory of III-V nitride semiconductors: Bands, Gap bowing, and effective masses"

An oversight of several previous results from local density approximation (LDA) calculations appear to have led to an incomplete, and hence misleading, characterization of the capability of density functional theory (DFT) to describe correctly the electronic properties of wurtzite GaN (w-GaN) and InN (w-InN) [Phys. Rev. B 82, 115102 (2010)]. These comments are aimed at presenting a different picture of the above capability for DFT calculations that solve self-consistently the system of equations of DFT. They also underscore, in light of the experimentally established Burstein-Moss effect, the need to specify the carrier density when citing a band gap for w-InN.

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preprint2010arXiv

Ab Initio Local Density Approximation Description of the Electronic Properties of Zinc Blende Cadmium Sulfide (zb-CdS)

Ab-initio, self-consistent electronic energy bands of zinc blende CdS are reported within the local density functional approximation (LDA). Our first principle, non-relativistic and ground state calculations employed a local density potential and the linear combination of atomic orbitals (LCAO). Within the framework of the Bagayoko, Zhao, and Williams (BZW) method, we solved self-consistently both the Kohn-Sham equation and the equation giving the ground state density in terms of the wave functions of the occupied states. Our calculated, direct band gap of 2.39 eV, at the point, is in accord with experiment. Our calculation reproduced the peaks in the conduction and valence bands density of states, within experimental uncertainties. The calculated electron effective mass agrees with experimental findings.

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preprint2010arXiv

Comments on "Efficient Band Gap Prediction for Solids" [Phys. Rev. Lett. 105, 196403 (2010)]

An oversight of several previous local density approximation (LDA) results appears to have led to an incomplete picture of the actual capability of density functional theory (DFT), with emphasis on LDA, to describe and to predict the band gaps of semiconductors [Phys. Rev. Lett. 105, 196403 (2010)]. LDA is portrayed as failing to describe the band gap of semiconductors. In light of the content of the literature, this characterization is misleading. These comments are intended to note some of these previous results and to provide an assessment of LDA capability that is drastically different from that of failure to describe or to predict the band gaps of several semiconductors. This true capability is apparent when the required system of equations of DFT (or LDA) is solved self-consistently as done in the Bagayoko, Zhao, and Williams (BZW) method

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preprint2010arXiv

Local Density Approximation Description of Electronic Properties of Wurtzite Cadmium Sulfide (w-CdS)

We present calculated, electronic and related properties of wurtzite cadmium sulfide (w-CdS). Our ab-initio, non-relativistic calculations employed a local density functional approximation (LDA) potential and the linear combination of atomic orbitals (LCAO). Following the Bagayoko, Zhao, and Williams (BZW) method, we solved self-consistently both the Kohn-Sham equation and the equation giving the ground state density in terms of the wave functions of the occupied states. Our calculated, direct band gap of 2.47 eV, at the point, is in excellent agreement with experiment. So are the calculated density of states and the electron effective mass. In particular, our results reproduce the peaks in the conduction band density of states, within the experimental uncertainties.

0 citations0 reviewsNo code linkedOpen access