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Researcher profile

D. Bagayoko

D. Bagayoko contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.other

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Published work

10 published item(s)

preprint2020arXiv

Accurate Ground State Electronic and Related Properties of Hexagonal Boron Nitride (h-BN)

We present an ab initio, self consistent density functional theory (DFT) description of ground state electronic and related properties of hexagonal boron nitride (hex-BN). We used a local density approximation (LDA) potential and the linear combination of atomic orbitals (LCAO) formalism. We rigorously implemented the Bagayoko, Zhao, and Williams (BZW) method, as enhanced by Ekuma and Franklin (BZW-EF). The method ensures a generalized minimization of the energy that is far beyond what can be obtained with self-consistency iterations using a single basis set. The method leads to the ground state of the material, in a verifiable manner, without employing over-complete basis sets. Consequently, our results possess the full, physical content of DFT, as per the second DFT theorem. We report the ground state band structure, band gap, total and partial densities of states, and electron and hole effective masses. Our calculated, indirect band gap of 4.37 eV,obtained with room temperature experimental lattice constant, is in agreement with the measured value of 4.3 eV. The valence band maximum is slightly to the left of the K point, while the conduction band minimum is at the M point. Our calculated total width of the valence and total and partial densities of states are in agreement with corresponding, experimental findings.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Re-examining the electronic structure of germanium: A first-principle study

We report results from an efficient, robust, ab-initio method for self-consistent calculations of electronic and structural properties of Ge. Our non-relativistic calculations employed a generalized gradient approximation (GGA) potential and the linear combination of atomic orbitals (LCAO) formalism. The distinctive feature of our computations stem from the use of Bagayoko-Zhao-Williams-Ekuma-Franklin (BZW-EF) method. Our results are in agreement with experimental ones where the latter are available. In particular, our theoretical, indirect band gap of 0.65 eV, at the experimental lattice constant of 5.66 Å, is in excellent agreement with experiment. Our predicted, equilibrium lattice constant is 5.63 Å, with a corresponding indirect band gap of 0.65 eV and a bulk modulus of 80 GPa. We also calculated the effective masses in various directions with respect to the $Γ$ point.

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preprint2012arXiv

Ab-initio Electronic and Structural Properties of Rutile Titanium Dioxide

Ab-initio, self-consistent electronic energy bands of rutile TiO2 are reported within the local density functional approximation (LDA). Our first principle, non-relativistic and ground state calculations employed a local density functional approximation (LDA) potential and the linear combination of atomic orbitals (LCAO). Within the framework of the Bagayoko, Zhao, and Williams (BZW) method, we solved self-consistently both the Kohn-Sham equation and the equation giving the ground state charge density in terms of the wave functions of the occupied states. Our calculated band structure shows that there is significant O2p-Ti3d hybridization in the valence bands. These bands are well separated from the conduction bands by an indirect band gap of 2.95 eV, from Γ to R. Consequently, this work predicts that rutile TiO2 is an indirect band gap material, as all other gaps from our calculations are larger than 2.95 eV. We found a slightly larger, direct band gap of 3.05 eV, at the Γ point, in excellent agreement with experiment. Our calculations reproduced the peaks in the measured conduction and valence bands densities of states, within experimental uncertainties. We also calculated electron effective mass. Our structural optimization led to lattice parameters of 4.65 Å and 2.97 Å for a_{0} and c_{0}, respectively with a u parameter of 0.3051 and a bulk modulus of 215 GPa.

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preprint2012arXiv

Electronic, structural, and elastic properties of metal nitrides XN (X = Sc, Y): A first principle study

We utilized a simple, robust, first principle method, based on basis set optimization with the BZW-EF method, to study the electronic and related properties of transition metal mono-nitrides: ScN and YN. We solved the KS system of equations self-consistently within the linear combination of atomic orbitals (LCAO) formalism. It is shown that the band gap and low energy conduction bands, as well as elastic and structural properties, can be calculated with a reasonable accuracy when the LCAO formalism is used to obtain an optimal basis. Our calculated, indirect electronic band gap (E$^\mathrm{Γ-X}_g$) is 0.79 (LDA) and 0.88 eV (GGA) for ScN. In the case of YN, we predict an indirect band gap (E$^\mathrm{Γ-X}_g$) of 1.09 (LDA) and 1.15 eV (GGA). We also calculated the equilibrium lattice constants, the bulk moduli (B$_{o}$), effective masses, and elastic constants for both systems. Our calculated values are in excellent agreement with experimental ones where the latter are available.

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preprint2012arXiv

First principle electronic, structural, elastic, and optical properties of strontium titanate

We report self-consistent ab-initio electronic, structural, elastic, and optical properties of cubic SrTiO$_{3}$ perovskite. Our non-relativistic calculations employed a generalized gradient approximation (GGA) potential and the linear combination of atomic orbitals (LCAO) formalism. The distinctive feature of our computations stem from solving self-consistently the system of equations describing the GGA, using the Bagayoko-Zhao-Williams (BZW) method. Our results are in agreement with experimental ones where the later are available. In particular, our theoretical, indirect band gap of 3.24 eV, at the experimental lattice constant of 3.91 Å, is in excellent agreement with experiment. Our predicted, equilibrium lattice constant is 3.92 Å, with a corresponding indirect band gap of 3.21 eV and bulk modulus of 183 GPa.

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preprint2012arXiv

First Principle Local Density Approximation Description of the Electronic Properties of Ferroelectric Sodium Nitrite

The electronic structure of the ferroelectric crystal, NaNO$_2$, is studied by means of first-principles, local density calculations. Our ab-initio, non-relativistic calculations employed a local density functional approximation (LDA) potential and the linear combination of atomic orbitals (LCAO). Following the Bagayoko, Zhao, Williams, method, as enhanced by Ekuma, and Franklin (BZW-EF), we solved self-consistently both the Kohn-Sham equation and the equation giving the ground state charge density in terms of the wave functions of the occupied states. We found an indirect band gap of 2.83 eV, from W to R. Our calculated direct gaps are 2.90, 2.98, 3.02, 3.22, and 3.51 eV at R, W, X, Γ, and T, respectively. The band structure and density of states show high localization, typical of a molecular solid. The partial density of states shows that the valence bands are formed only by complex anionic states. These results are in excellent agreement with experiment. So are the calculated densities of states. Our calculated electron effective masses of 1.18, 0.63, and 0.73 mo in the Γ-X, Γ-R, and Γ-W directions, respectively, show the highly anisotropic nature of this material.

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preprint2011arXiv

Comments on "Band gap and band parameters of InN and GaN from quasiparticle energy calculations based on exact-exchange density-functional theory" [Appl. Phys. Lett. 89, 161919 (2006)]

An oversight of some previous density functional calculations of the band gaps of wurtzite and cubic InN and of wurtzite GaN by Rinke et al. [Appl. Phys. Lett. 89,161919, 2006] led to an inaccurate and misleading statement relative to limitations of density functional theory (DFT) for the description of electronic properties of these materials. These comments address this statement. In particular, they show that some local density approximation (LDA) calculations have correctly described or predicted electronic and related properties of these systems [Phys. Rev. B 60, 1563, 1999; J. Appl. Phys. 96, 4297, 2004, and 97, 123708, 2005]. These successful calculations solved self-consistently the system of equations defining LDA, i.e., the Kohn-Sham equation and the equation giving the ground state charge density in terms of the wave functions of the occupied states.

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preprint2010arXiv

Ab Initio Local Density Approximation Description of the Electronic Properties of Zinc Blende Cadmium Sulfide (zb-CdS)

Ab-initio, self-consistent electronic energy bands of zinc blende CdS are reported within the local density functional approximation (LDA). Our first principle, non-relativistic and ground state calculations employed a local density potential and the linear combination of atomic orbitals (LCAO). Within the framework of the Bagayoko, Zhao, and Williams (BZW) method, we solved self-consistently both the Kohn-Sham equation and the equation giving the ground state density in terms of the wave functions of the occupied states. Our calculated, direct band gap of 2.39 eV, at the point, is in accord with experiment. Our calculation reproduced the peaks in the conduction and valence bands density of states, within experimental uncertainties. The calculated electron effective mass agrees with experimental findings.

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preprint2010arXiv

Comments on "Efficient Band Gap Prediction for Solids" [Phys. Rev. Lett. 105, 196403 (2010)]

An oversight of several previous local density approximation (LDA) results appears to have led to an incomplete picture of the actual capability of density functional theory (DFT), with emphasis on LDA, to describe and to predict the band gaps of semiconductors [Phys. Rev. Lett. 105, 196403 (2010)]. LDA is portrayed as failing to describe the band gap of semiconductors. In light of the content of the literature, this characterization is misleading. These comments are intended to note some of these previous results and to provide an assessment of LDA capability that is drastically different from that of failure to describe or to predict the band gaps of several semiconductors. This true capability is apparent when the required system of equations of DFT (or LDA) is solved self-consistently as done in the Bagayoko, Zhao, and Williams (BZW) method

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preprint2010arXiv

Local Density Approximation Description of Electronic Properties of Wurtzite Cadmium Sulfide (w-CdS)

We present calculated, electronic and related properties of wurtzite cadmium sulfide (w-CdS). Our ab-initio, non-relativistic calculations employed a local density functional approximation (LDA) potential and the linear combination of atomic orbitals (LCAO). Following the Bagayoko, Zhao, and Williams (BZW) method, we solved self-consistently both the Kohn-Sham equation and the equation giving the ground state density in terms of the wave functions of the occupied states. Our calculated, direct band gap of 2.47 eV, at the point, is in excellent agreement with experiment. So are the calculated density of states and the electron effective mass. In particular, our results reproduce the peaks in the conduction band density of states, within the experimental uncertainties.

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