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G. Gumbs

G. Gumbs contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-sci cond-mat.mes-hall cond-mat.str-el

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preprint2011arXiv

Comparison of charged particle energy loss in epitaxial with free-standing multilayer graphene

We present a formalism and numerical results for the energy loss of a charged particle scattered at an arbitrary angle from epitaxially grown multilayer graphene (MLG). It is compared with that of free-standing graphene layers. Specifically, we investigated the effect of the substrate induced energy gap on one of the layers. The gap yields collective plasma oscillations whose characteristics are qualitatively and quantitatively different from those produced by Dirac fermions in gapless graphene. The range of wave numbers for undamped self-sustaining plasmons is increased as the gap is increased, thereby increasing and red-shifting the MLG stopping power for some range of charged particle velocity. We also applied our formalism to interpret several distinct features of experimentally obtained electron energy loss spectroscopy (EELS) data.

preprint2011arXiv

Trapping photon-dressed Dirac electrons in a quantum dot studied by coherent two dimensional photon echo spectroscopy

We study the localization of dressed Dirac electrons in a cylindrical quantum dot (QD) formed on monolayer and bilayer graphene by spatially different potential profiles. Short lived excitonic states which are too broad to be resolved in linear spectroscopy are revealed by cross peaks in the photon-echo nonlinear technique. Signatures of the dynamic gap in the two-dimensional spectra are discussed. The effect of the Coulomb induced exciton-exciton scattering and the formation of biexciton molecules are demonstrated.

preprint2010arXiv

Magneto-infrared modes in InAs-AlSb-GaSb coupled quantum wells

We have studied a series of InAs/GaSb coupled quantum wells using magneto-infrared spectroscopy for high magnetic fields up to 33T within temperatures ranging from 4K to 45K in both Faraday and tilted field geometries. This type of coupled quantum wells consists of an electron layer in the InAs quantum well and a hole layer in the GaSb quantum well, forming the so-called two dimensional electron-hole bilayer system. Unlike the samples studied in the past, the hybridization of the electron and hole subbands in our samples is largely reduced by having narrower wells and an AlSb barrier layer interposed between the InAs and the GaSb quantum wells, rendering them weakly hybridized. Previous studies have revealed multiple absorption modes near the electron cyclotron resonance of the InAs layer in moderately and strongly hybridized samples, while only a single absorption mode was observed in the weakly hybridized samples. We have observed a pair of absorption modes occurring only at magnetic fields higher than 14T, which exhibited several interesting phenomena. Among which we found two unique types of behavior that distinguishes this work from the ones reported in the literature. This pair of modes is very robust against rising thermal excitations and increasing magnetic fields alligned parallel to the heterostructures. While the previous results were aptly explained by the antilevel crossing gap due to the hybridization of the electron and hole wavefunctions, i.e. conduction-valence Landau level mixing, the unique features reported in this paper cannot be explained within the same concept. The unusual properties found in this study and their connection to the known models for InAs/GaSb heterostructures will be disccused; in addition, several alternative ideas will be proposed in this paper and it appears that a spontaneous phase separation can account for most of the observed features.