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G. G. Baez Flores

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Published work

3 published item(s)

preprint2022arXiv

Effect of interfacial intermixing on spin-orbit torque in Co/Pt bilayers

Using the first-principles non-equilibrium Green's function technique with supercell disorder averaging, we study the influence of interfacial intermixing on the spin-orbit torque in Co$\mid$Pt bilayers. Intermixing is modeled by inserting one or more monolayers of a disordered CoPt alloy between Co and Pt. Dampinglike torque is moderately enhanced by interfacial intermixing, while the fieldlike torque, which is small for abrupt interfaces, is strongly enhanced and becomes comparable to the dampinglike torque. The enhancement of the fieldlike torque is attributed to the interface between Co and the intermixed region. The planar Hall-like torque increases with intermixing but remains relatively small. The behavior of the torques is similar for bilayers with (111) and (001)-oriented interfaces. Strong dependence of the fieldlike torque on intermixing could provide a way to tune the fieldlike-to-dampinglike torque ratio by interface engineering.

preprint2020arXiv

Effects of intrinsic defects and alloying with Fe on the half-metallicity of Co$_2$MnSi

The electronic structure and half-metallic gap of Co$_{2}$MnSi in the presence of crystallographic defects, partial Fe substitution for Mn, and thermal spin fluctuations are studied using the coherent potential approximation and the disordered local moment method. In the presence of 5\% Co or Mn vacancies the Fermi level shifts down to the minority-spin valence-band maximum. In contrast to NiMnSb, both types of Mn antisite defects in Co$_{2}$MnSi are strongly exchange-coupled to the host magnetization, and thermal spin fluctuations do not strongly affect the half-metallic gap. Partial substitution of Mn by Fe results in considerable changes in the Bloch spectral function near the Fermi level, which strongly deviate from the rigid-band picture. In particular, a light band with the Fe character crosses the Fermi level at about 50\% concentration. At room temperature, Fe substitution of up to 30\% slightly increases the spin polarization at the Fermi level.

preprint2020arXiv

Generalized magnetoelectronic circuit theory and spin relaxation at interfaces in magnetic multilayers

Spin transport at metallic interfaces is an essential ingredient of various spintronic device concepts, such as giant magnetoresistance, spin-transfer torque, and spin pumping. Spin-orbit coupling plays an important role in many such devices. In particular, spin current is partially absorbed at the interface due to spin-orbit coupling. We develop a general magnetoelectronic circuit theory and generalize the concept of the spin mixing conductance, accounting for various mechanisms responsible for spin-flip scattering. For the special case when exchange interactions dominate, we give a simple expression for the spin mixing conductance in terms of the contributions responsible for spin relaxation (i.e., spin memory loss), spin torque, and spin precession. The spin-memory loss parameter $δ$ is related to spin-flip transmission and reflection probabilities. There is no straightforward relation between spin torque and spin memory loss. We calculate the spin-flip scattering rates for N|N, F|N, F|F interfaces using the Landauer-Büttiker method within the linear muffin-tin orbital method and determine the values of $δ$ using circuit theory.