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G. D. Tsibidis

G. D. Tsibidis appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-sci cond-mat.mes-hall cond-mat.quant-gas physics.app-ph physics.optics

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preprint2021arXiv

Ultrashort pulsed laser induced complex surface structures generated by tailoring the melt hydrodynamics

We present a novel approach for tailoring the laser induced surface topography upon femtosecond-fs pulsed laser irradiation. The method employs spatially controlled double fs laser pulses to actively regulate the hydrodynamic microfluidic motion of the melted layer that gives rise to the structures formation. The pulse train used, in particular, consists of a previously unexplored spatiotemporal intensity combination including one pulse with Gaussian and another with periodically modulated intensity distribution created by Direct Laser Interference Patterning (DLIP). The interpulse delay is appropriately chosen to reveal the contribution of the microfluidic melt flow, while it is found that the sequence of the Gaussian and DLIP pulses remarkably influences the surface profile attained. Results also demonstrate that both the spatial intensity of the double pulse and the effective number of pulses per irradiation spot can further be modulated to control the formation of complex surface morphologies. The underlying physical processes behind the complex patterns generation were interpreted in terms of a multiscale model combining electrodynamic excitation with melt hydrodynamics. We believe that this work can constitute a significant step forward towards producing laser induced surface structures on demand by tailoring the melt microfluidic phenomena.

preprint2020arXiv

Modelling ultrafast non-equilibrium carrier dynamics and relaxation processes upon irradiation of hexagonal Silicon-Carbide with femtosecond laser pulses

We present a theoretical investigation of the yet unexplored dynamics of the produced excited carriers upon irradiation of hexagonal Silicon Carbide (6H-SiC) with femtosecond laser pulses. To describe the ultrafast behaviour of laser induced out-of-equilibrium carriers, a real time simulation based on Density Functional Theory (DFT) methodology is used to compute both the hot carrier dynamics and transient change of the optical properties. A Two-Temperature model (TTM) is also employed to derive the relaxation processes for laser pulses of wavelength 401 nm, duration 50 fs at normal incidence irradiation which indicate that surface damage on the material occurs for fluence ~1.88 Jcm-2. This approach of linking, for the first time, real time calculations, transient optical properties and TTM modelling, has strong implications for understanding both the ultrafast dynamics and relaxation processes and providing a precise investigation of the impact of hot carrier population in surface damage mechanisms in solids.

preprint2015arXiv

Hysteresis and metastability of Bose-Einstein condensed clouds of atoms confined in ring potentials

We consider a Bose-Einstein condensed cloud of atoms which rotate in a toroidal/annular potential. Assuming one-dimensional motion, we evaluate the critical frequencies associated with the effect of hysteresis and the critical coupling for stability of the persistent currents. We perform these calculations using both the mean-field approximation and the method of numerical diagonalization of the many-body Hamiltonian which includes corrections due to the finiteness of the atom number.

preprint2015arXiv

Ultrafast laser induced surface modification in absence of non-thermal melting and evaporation

The present paper elucidates the physical mechanism that accounts for the principal/primary stages of the structuring process taking place upon irradiation of a conductive solid with multiple identical femtosecond laser pulses, based on the consideration of a hybrid theoretical model. Heat transfer along with hydrodynamics simulations demonstrate that it is possible to create morphology change conditions by solely exploiting capillary effects, in the absence of either non-thermal melting or evaporation. Simulation results, confirmed by experiments, reveal the intermediate surface modification stage acting as a predecessor of microcones formation.

preprint2013arXiv

The influence of ultrafast temporal energy regulation on the morphology of Si surfaces through femtosecond double pulse laser irradiation

The effect of ultrashort laser-induced morphological changes upon irradiation of silicon with double pulse sequences is investigated under conditions that lead to mass removal. The temporal delay between twelve double and equal-energy pulses (Ep=0.24J/cm2 each, with pulse duration tp=430fs, 800nm laser wavelength) was varied between 0 and 14ps and a decrease of the damaged area, crater depth size and periodicity of the induced subwavelength ripples (by 3-4%) was observed with increasing pulse delay. The proposed underlying mechanism is based on the combination of carrier excitation and energy thermalization and capillary wave solidification and aims to provide an alternative explanation to the control of ripple periodicity by temporal pulse tailoring. This work demonstrates the potential of pulse shaping technology to improve nano/micro processing.

preprint2012arXiv

Thermoplastic deformation of silicon surfaces induced by ultrashort pulsed lasers in submelting conditions

A hybrid 2D theoretical model is presented to describe thermoplastic deformation effects on silicon surfaces induced by single and multiple ultrashort pulsed laser irradiation in submelting conditions. An approximation of the Boltzmann transport equation is adopted to describe the laser irradiation process. The evolution of the induced deformation field is described initially by adopting the differential equations of dynamic thermoelasticity while the onset of plastic yielding is described by the von Mise's stress. Details of the resulting picometre sized crater, produced by irradiation with a single pulse, are then discussed as a function of the imposed conditions and thresholds for the onset of plasticity are computed. Irradiation with multiple pulses leads to ripple formation of nanometre size that originates from the interference of the incident and a surface scattered wave. It is suggested that ultrafast laser induced surface modification in semiconductors is feasible in submelting conditions, and it may act as a precursor of the incubation effects observed at multiple pulse irradiation of materials surfaces.