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G. Chappell

G. Chappell appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.str-elcond-mat.mtrl-sci

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Published work

2 published item(s)

preprint2020arXiv

Origin of gap-like behaviors in URu$_2$Si$_2$: Combined study via quasiparticle scattering spectroscopy and resistivity measurements

We address two long-standing questions regarding the hidden order in URu2Si2: Is it associated with the hybridization process, and what are the distinct roles played by the localized and itinerant electrons? Our quasiparticle scattering spectroscopy reveals a hybridization gap ubiquitous in the entire phase space spanned by P and Fe substitutions in URu2Si2, including the no-order and antiferromagnetic regions, with minimal change upon crossing the phase boundary. This indicates its opening isn't associated with the ordering, and thus localized electrons must be the major player. Towards a consistent understanding of all the other gap-like behaviors observed only below transition temperatures, we analyze the electrical resistivity using a model in which gapped bosonic excitations are the dominant scattering source. With their stiffness set to follow an unusual temperature dependence (decreasing with decreasing temperature), this model fits all of our resistivity data well including the jump at the transition. Remarkably, the extracted gap increases slowly with increasing Fe content, similarly to the gap detected by inelastic neutron scattering at Q1 = (1.4, 0, 0), suggesting a common origin. Such a model can also naturally explain the Hall effect temperature dependence without invoking Fermi surface gapping.

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preprint2020arXiv

Tuning the structural and antiferromagnetic phase transitions in UCr$_{2}$Si$_2$: hydrostatic pressure and chemical substitution

Structural phase transitions in $f$-electron materials have attracted sustained attention both for practical and basic science reasons, including that they offer an environment to directly investigate relationships between structure and the $f$-state. Here we present results for UCr$_2$Si$_2$, where structural (tetragonal $\rightarrow$ monoclinic) and antiferromagnetic phase transitions are seen at $T_{\rm{S}}$ $=$ 205 K and $T_{\rm{N}}$ $=$ 25 K, respectively. We also provide evidence for an additional second order phase transition at $T_{\rm{X}}$ = 280 K. We show that $T_{\rm{X}}$, $T_{\rm{S}}$, and $T_{\rm{N}}$ respond in distinct ways to the application of hydrostatic pressure and Cr $\rightarrow$ Ru chemical substitution. In particular, hydrostatic compression increases the structural ordering temperature, eventually causes it to merge with $T_{\rm{X}}$ and destroys the antiferromagnetism. In contrast, chemical substitution in the series UCr$_{2-x}$Ru$_x$Si$_2$ suppresses both $T_{\rm{S}}$ and $T_{\rm{N}}$, causing them to approach zero temperature near $x$ $\approx$ 0.16 and 0.08, respectively. The distinct $T-P$ and $T-x$ phase diagrams are related to the evolution of the rigid Cr-Si and Si-Si substructures, where applied pressure semi-uniformly compresses the unit cell and Cr $\rightarrow$ Ru substitution results in uniaxial lattice compression along the tetragonal $c$-axis and an expansion in the $ab$-plane. These results provide insights into an interesting class of strongly correlated quantum materials where degrees of freedom associated with $f$-electron magnetism, strong electronic correlations, and structural instabilities are readily controlled.

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