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G. Bihlmayer

G. Bihlmayer appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-elcond-mat.dis-nncond-mat.otherquant-ph

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Published work

17 published item(s)

preprint2022arXiv

Multiplet Effects in the Electronic Correlation of One-Dimensional Magnetic Transition-Metal Oxides on Metals

We use the constrained random phase approximation (cRPA) method to calculate the Hubbard $U$ parameter in four one-dimensional magnetic transition metal atom oxides of composition XO$_2$ (X = Mn, Fe, Co, Ni) on Ir(100). In addition to the expected screening of the oxide, i.e., a significant reduction of the $U$ value by the presence of the metal substrate, we find a strong dependence on the electronic configuration (multiplet) of the X($d$) orbital. Each particular electronic configuration attained by atom X is dictated by the O ligands, as well as by the charge transfer and hybridization with the Ir(100) substrate. We find that MnO$_2$ and NiO$_2$ chains exhibit two different screening regimes, while the case of CoO$_2$ is somewhere in between. The electronic structure of the MnO$_2$ chain remains almost unchanged upon adsorption. Therefore, in this regime, the additional screening is predominantly generated by the electrons of the neighboring metal surface atoms. The screening strength for NiO$_2$/Ir(100) is found to depend on the Ni($d$) configuration in the adsorbed state. The case of FeO$_2$ shows an exceptional behavior, as it is the only insulating system in the absence of metallic substrate and, thus, it has the largest $U$ value. However, this value is significantly reduced by the two mentioned screening effects after adsorption.

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preprint2021arXiv

Nature of Interfacial Dzyaloshinskii-Moriya Interactions in Graphene/Co/Pt(111) Multilayer Heterostructures

DFT calculations within the generalized Bloch theorem approach show that interfacial Dzyaloshinskii-Moriya interactions (DMI) at both interfaces of Graphene/Co$_n$/Pt(111) multilayer heterostructures are decoupled for $n \geq 3$. Unlike the property of magnetocrystalline anisotropy for this system, DMI is not affected by stacking defects in the Co layer. The effect of Graphene (Gr) is to invert the chirality of the vaccum/Co interfacial DMI, overall reducing the DMI of the heterostructure, which is nevertheless dominated by the strong spin-orbit coupling (SOC) of Pt. A spectral analysis in the reciprocal space shows that DMI at both the Gr/Co and Co/Pt interfaces have the same nature, namely SOC-split hybrid bands of $d$-orbital character. This proves that a DMI model based on a single band, such the Rashba DMI model, is insuficient to describe the behaviour of this family of Gr-capped $3d/5d$ metal heterostructures.

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preprint2016arXiv

Fermi surface manipulation by external magnetic field demonstrated for a prototypical ferromagnet

We consider the details of the near-surface electronic band structure of a prototypical ferromagnet, Fe(001). Using high resolution angle-resolved photoemission spectroscopy we demonstrate openings of the spin-orbit induced electronic band gaps near the Fermi level. The band gaps and thus the Fermi surface can be manipulated by changing the remanent magnetization direction. The effect is of the order of $Δ$E = 100 meV and $Δ\text {k} = 0.1\,\textÅ^{-1}$. We show that the observed dispersions are dominated by the bulk band structure. First-principles calculations and one-step photoemission calculations suggest that the effect is related to changes in the electronic ground state, rather than caused by the photoemission process itself. The symmetry of the effect indicates that the observed electronic bulk states are influenced by the presence of the surface, which might be understood as related to a Rashba-type effect. By pinpointing the regions in the electronic band structure where the switchable band gaps occur, we demonstrate the significance of spin-orbit interaction even for elements as light as 3d ferromagnets.

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preprint2016arXiv

Hund's rule-driven Dzyaloshinskii-Moriya interaction at 3d-5d interfaces

Using relativistic first-principles calculations, we show that the chemical trend of Dzyaloshinskii-Moriya interaction (DMI) in 3d-5d ultrathin films follows Hund's first rule with a tendency similar to their magnetic moments in either the unsupported 3d monolayers or 3d-5d interfaces. We demonstrate that, besides the spin-orbit coupling (SOC) effect in inversion asymmetric noncollinear magnetic systems, the driving force is the 3d orbital occupation and their spin flip/mixing processes with the spin-orbit active 5d states control directly the sign and magnitude of the DMI. The magnetic chirality changes are discussed in the light of the interplay between SOC, Hund's first rule, and the crystal field splitting of d orbitals.

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preprint2015arXiv

Engineering skyrmions in transition-metal multilayers for spintronics

Magnetic skyrmions are localized, topologically protected spin-structures that have been proposed for storing or processing information due to their intriguing dynamical and transport properties. Important in terms of applications is the recent discovery of interface stabilized skyrmions as evidenced in ultra-thin transition-metal films. However, so far only skyrmions at interfaces with a single atomic layer of a magnetic material were reported, which greatly limits their potential for application in devices. Here, we predict the emergence of skyrmions in [4d/Fe_2/5d]_n multilayers, i.e. structures composed of Fe biatomic layers sandwiched between 4d- and 5d-transition-metal layers. In these composite structures, the exchange and the Dzyaloshinskii-Moriya interactions which control skyrmion formation can be tuned separately by the two interfaces. This allows engineering skyrmions as shown based on density functional theory and spin dynamics simulations.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Scattering properties of the three-dimensional topological insulator Sb2Te3: Coexistence of topologically trivial and non-trivial surface states with opposite spin-momentum helicity

The binary chalcogenides Bi2Te3 and Bi2Se3 are the most widely studied topological insulators. Although the quantum anomalous Hall effect has recently been observed in magnetically doped Sb2Te3 this compound has been studied to a much lesser extend. Here, by using energy resolved quasiparticle interference mapping, we investigate the scattering events of pristine Sb2Te3 surfaces. We find that, in addition to the Dirac fermions, another strongly spin polarized surface resonance emerges at higher energies in the unoccupied electronic states. Although the two surface states are of different origin, i.e. topologically protected and trivial, respectively, both show strongly directional scattering properties and absence of backscattering. Comparison with ab-initio calculations demonstrates that this is a direct consequence of their spin momentum locked spin texture which is found to exhibit an opposite rotational sense for the trivial state and the Dirac state.

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preprint2015arXiv

Topological Crystalline Insulator and Quantum Anomalous Hall States in IV-VI based Monolayers and their Quantum Wells

Different from the two-dimensional (2D) topological insulator, the 2D topological crystalline insulator (TCI) phase disappears when the mirror symmetry is broken, e.g., upon placing on a substrate. Here, based on a new family of 2D TCIs - SnTe and PbTe monolayers - we theoretically predict the realization of the quantum anomalous Hall effect with Chern number C = 2 even when the mirror symmetry is broken. Remarkably, we also demonstrate that the considered materials retain their large-gap topological properties in quantum well structures obtained by sandwiching the monolayers between NaCl layers. Our results demonstrate that the TCIs can serve as a seed for observing robust topologically non-trivial phases.

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preprint2014arXiv

Intra- and Interband Electron Scattering in the Complex Hybrid Topological Insulator Bismuth Bilayer on Bi$_2$Se$_3$

The band structure, intra- and interband scattering processes of the electrons at the surface of a bismuth-bilayer on Bi$_2$Se$_3$ have been experimentally investigated by low-temperature Fourier-transform scanning tunneling spectroscopy. The observed complex quasiparticle interference patterns are compared to a simulation based on the spin-dependent joint density of states approach using the surface-localized spectral function calculated from first principles as the only input. Thereby, the origin of the quasiparticle interferences can be traced back to intraband scattering in the bismuth bilayer valence band and Bi$_2$Se$_3$ conduction band, and to interband scattering between the two-dimensional topological state and the bismuth-bilayer valence band. The investigation reveals that the bilayer band gap, which is predicted to host one-dimensional topological states at the edges of the bilayer, is pushed several hundred milli-electronvolts above the Fermi level. This result is rationalized by an electron transfer from the bilayer to Bi$_2$Se$_3$ which also leads to a two-dimensional electron state in the Bi$_2$Se$_3$ conduction band with a strong Rashba spin-splitting, coexisting with the topological state and bilayer valence band.

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preprint2013arXiv

Co atoms on Bi$_{2}$Se$_{3}$ revealing a coverage dependent spin reorientation transition

We investigate Co nanostructures on Bi$_{2}$Se$_{3}$ by means of scanning tunneling microscopy and spectroscopy [STM/STS], X-ray absorption spectroscopy [XAS], X-ray magnetic dichroism [XMCD] and calculations using the density functional theory [DFT]. In the single adatom regime we find two different adsorption sites by STM. Our calculations reveal these to be the fcc and hcp hollow sites of the substrate. STS shows a pronounced peak for only one species of the Co adatoms indicating different electronic properties of both types. These are explained on the basis of our DFT calculations by different hybridizations with the substrate. Using XMCD we find a coverage dependent spin reorientation transition from easy-plane toward out-of-plane. We suggest clustering to be the predominant cause for this observation.

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preprint2013arXiv

Elemental Topological Insulator with a Tunable Fermi Level: Strained α-Sn on InSb(001)

We report on the epitaxial fabrication and electronic properties of a topological phase in strained α-Sn on InSb. The topological surface state forms in the presence of an unusual band order not based on direct spin-orbit coupling, as shown in density functional and GW slab-layer calculations. Angle-resolved photoemission including spin detection probes experimentally how the topological spin-polarized state emerges from the second bulk valence band. Moreover, we demonstrate the precise control of the Fermi level by dopants.

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preprint2013arXiv

Tuning the Curie temperature of FeCo compounds by tetragonal distortion

Combining density-functional theory calculations with a classical Monte Carlo method, we show that for B2-type FeCo compounds tetragonal distortion gives rise to a strong reduction of the Curie temperature $T_{\mathrm{C}}$. The $T_{\mathrm{C}}$ monotonically decreases from 1575 K (for $c/a=1$) to 940 K (for $c/a=\sqrtwo$). We find that the nearest neighbor Fe-Co exchange interaction is sufficient to explain the $c/a$ behavior of the $T_{\mathrm{C}}$. Combination of high magnetocrystalline anisotropy energy with a moderate $T_{\mathrm{C}}$ value suggests tetragonal FeCo grown on the Rh substrate with $c/a=1.24$ to be a promising material for heat-assisted magnetic recording applications.

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preprint2012arXiv

Graphene for spintronics: giant Rashba splitting due to hybridization with Au

Graphene in spintronics has so far primarily meant spin current leads of high performance because the intrinsic spin-orbit coupling of its pi-electrons is very weak. If a large spin-orbit coupling could be created by a proximity effect, the material could also form active elements of a spintronic device such as the Das-Datta spin field-effect transistor, however, metal interfaces often compromise the band dispersion of massless Dirac fermions. Our measurements show that Au intercalation at the graphene-Ni interface creates a giant spin-orbit splitting (~100 meV) in the graphene Dirac cone up to the Fermi energy. Photoelectron spectroscopy reveals hybridization with Au-5d states as the source for the giant spin-orbit splitting. An ab initio model of the system shows a Rashba-split dispersion with the analytically predicted gapless band topology around the Dirac point of graphene and indicates that a sharp graphene-Au interface at equilibrium distance will account for only ~10 meV spin-orbit splitting. The ab initio calculations suggest an enhancement due to Au atoms that get closer to the graphene and do not violate the sublattice symmetry.

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preprint2012arXiv

On the nature of the spin polarization limit in the warped Dirac cone of the Bi2Te3

The magnitude of electron spin polarization in topologically protected surface states is an important parameter with respect to spintronics applications. In order to analyze the warped spin texture in Bi$_2$Te$_3$ thin films, we combine angle- and spin-resolved photoemission experiments with theoretical \textit{ab initio} calculations. We find an \textit{in-plane} spin polarization of up to $\sim$~45\% in the topologically protected Dirac cone states near the Fermi level. The Fermi surface of the Dirac cone state is warped and shows an \textit{out-of-plane} spin polarization of $\sim$~15\%. These findings are in quantitative agreement with dedicated simulations which find electron density of the Dirac cone delocalized over the first quintuple layer with spin reversal occurring in the surface atomic layer.

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preprint2012arXiv

Probing two topological surface bands of Sb2Te3 by spin-polarized photoemission spectroscopy

Using high resolution spin- and angle-resolved photoemission spectroscopy, we map the electronic structure and spin texture of the surface states of the topological insulator Sb2Te3. In combination with density functional calculations (DFT), we directly show that Sb2Te3 exhibits a partially occupied, single spin-Dirac cone around the Fermi energy, which is topologically protected. DFT obtains a spin polarization of the occupied Dirac cone states of 80-90%, which is in reasonable agreement with the experimental data after careful background subtraction. Furthermore, we observe a strongly spin-orbit split surface band at lower energy. This state is found at 0.8eV below the Fermi level at the gamma-point, disperses upwards, and disappears at about 0.4eV below the Fermi level into two different bulk bands. Along the gamma-K direction, the band is located within a spin-orbit gap. According to an argument given by Pendry and Gurman in 1975, such a gap must contain a surface state, if it is located away from the high symmetry points of the Brillouin zone. Thus, the novel spin-split state is protected by symmetry, too.

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preprint2011arXiv

Direct observation of spin-polarized surface states in the parent compound of topological insulator Bi-Sb using spin-resolved-ARPES in a 3D Mott-polarimetry spin mode

We report high-resolution spin-resolved photoemission spectroscopy (Spin-ARPES) measurements on the parent compound Sb of the first discovered 3D topological insulator Bi{1-x}Sb{x} [D. Hsieh et al., Nature 452, 970 (2008) Submitted 2007]. By modulating the incident photon energy, we are able to map both the bulk and (111) surface band structure, from which we directly demonstrate that the surface bands are spin polarized by the spin-orbit interaction and connect the bulk valence and conduction bands in a topologically non-trivial way. A unique asymmetric Dirac surface state gives rise to a $k$-splitting of its spin polarized electronic channels. These results complement our previously published works on this materials class and re-confirm our discovery of first bulk (3D) topological insulator - topological order in bulk solids. [Invited article for NJP-IOP Focus issue on "Topological Insulators"]

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preprint2010arXiv

Well-localized edge states in two-dimensional topological insulators: ultrathin Bi films

We theoretically study the generic behavior of the penetration depth of the edge states in two-dimensional quantum spin Hall systems. We found that the momentum-space width of the edge-state dispersion scales with the inverse of the penetration depth. As an example of well-localized edge states, we take the Bi(111) ultrathin film. Its edge states are found to extend almost over the whole Brillouin zone. Correspondingly, the bismuth (111) 1-bilayer system is proposed to have well-localized edge states in contrast to the HgTe quantum well.

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preprint2004arXiv

The role of the spin in quasiparticle interference

Quasiparticle interference patterns measured by scanning tunneling microscopy (STM) can be used to study the local electronic structure of metal surfaces and high temperature superconductors. Here, we show that even in non-magnetic systems the spin of the quasiparticles can have a profound effect on the interference patterns. On Bi(110), where the surface state bands are not spin-degenerate, the patterns are not related to the dispersion of the electronic states in a simple way. In fact, the features which are expected for the spin-independent situation are absent and the observed interference patterns can only be interpreted by taking spin-conserving scattering events into account.

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