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G. Bian

G. Bian appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-el

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Published work

7 published item(s)

preprint2020arXiv

Surface-state Coulomb repulsion accelerates a metal-insulator transition in topological semimetal nanofilms

The emergence of quantization at the nanoscale, the quantum size effect (QSE), allows flexible control of matter and is a rich source of advanced functionalities. A QSE-induced transition into an insulating phase in semimetallic nanofilms was predicted for bismuth a half-century ago and has regained new interest with regard to its surface states exhibiting nontrivial electronic topology. Here, we reveal an unexpected mechanism of the transition by high-resolution angle-resolved photoelectron spectroscopy combined with theoretical calculations. Anomalous evolution and degeneracy of quantized energy levels indicate that increased Coulomb repulsion from the surface states deforms a quantum confinement potential with decreasing thickness. The potential deformation drastically modulates spatial distributions of quantized wave functions, which leads to acceleration of the transition even beyond the original QSE picture. This discovery establishes a complete picture of the long-discussed problem in bismuth and highlights the new class of size effects dominating nanoscale transport in systems with metallic surface states.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

An experimental algorithm for identifying the topological nature of Kondo and mixed valence insulators

Possible topological nature of Kondo and mixed valence insulators has been a recent topic of interest in condensed matter physics. Attention has focused on SmB6, which has long been known to exhibit low temperature transport anomaly, whose origin is of independent interest. We argue that it is possible to resolve the topological nature of surface states by uniquely accessing the surface electronic structure of the low temperature anomalous transport regime through combining state-of-the-art laser- and synchrotron-based angle-resolved photoemission spectroscopy (ARPES) with or without spin resolution. A combination of low temperature and ultra-high resolution (laser) which is lacking in previous ARPES studies of this compound is the key to resolve the possible existence of topological surface state in SmB6. Here we outline an experimental algorithm to systematically explore the topological versus trivial or mixed (topological and trivial surface state admixture as in the first 3D TI Bi$_{1-x}$Sb$_x$) nature of the surface states in Kondo and mixed valence insulators. We conclude based on this methodology that the observed topology of the surface Fermi surface in our low temperature data considered within the level of current resolution is consistent with the theoretically predicted topological picture, suggesting a topological origin of the dominant in-gap ARPES signal in SmB6.}

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preprint2015arXiv

Observation of a topological 3D Dirac semimetal phase in high-mobility Cd3As2

Experimental identification of three-dimensional (3D) Dirac semimetals in solid state systems is critical for realizing exotic topological phenomena and quantum transport such as the Weyl phases, high temperature linear quantum magnetoresistance and topological magnetic phases. Using high resolution angle-resolved photoemission spectroscopy, we performed systematic electronic structure studies on well-known compound Cd3As2. For the first time, we observe a highly linear bulk Dirac cone located at the Brillouin zone center projected onto the (001) surface which is consistent with a 3D Dirac semimetal phase in Cd3As2. Remarkably, an unusually high Dirac Fermion velocity up to 10.2 \textrmÅ{\cdot}$eV (1.5 \times 10^{6} ms^-1) is seen in samples where the mobility far exceeds 40,000 cm^2/V.s suggesting that Cd3As2 can be a promising candidate as a hypercone analog of graphene in many device-applications which can also incorporate topological quantum phenomena in a large gap setting. Our experimental identification of this novel topological 3D Dirac semimetal phase, distinct from a 3D topological insulator phase discovered previously, paves the way for exploring higher dimensional relativistic physics in bulk transport and for realizing novel Fermionic matter such as a Fermi arc nodal metal.

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preprint2015arXiv

Topological phase diagram and saddle point singularity in a tunable topological crystalline insulator

We report the evolution of the surface electronic structure and surface material properties of a topological crystalline insulator (TCI) Pb1-xSnxSe as a function of various material parameters including composition x, temperature T and crystal structure. Our spectroscopic data demonstrate the electronic groundstate condition for the saddle point singularity, the tunability of surface chemical potential, and the surface states' response to circularly polarized light. Our results show that each material parameter can tune the system between trivial and topological phase in a distinct way unlike as seen in Bi2Se3 and related compounds, leading to a rich and unique topological phase diagram. Our systematic studies of the TCI Pb1-xSnxSe are valuable materials guide to realize new topological phenomena.

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preprint2014arXiv

Saddle point singularity and topological phase diagram in a tunable topological crystalline insulator (TCI)

A topological crystalline insulator (TCI) is a new phase of topological matter, which is predicted to exhibit distinct topological quantum phenomena, since space group symmetries replace the role of time-reversal symmetry in the much-studied Z$_2$ topological insulators. Utilizing high-resolution angle-resolved photoemission spectroscopy (ARPES), we reveal the momentum space nature of interconnectivity of the Fermi surface pockets leading to a saddle point singularity within the topological surface state alone in the TCI Pb$_{0.7}$Sn$_{0.3}$Se. Moreover, we show that the measured momentum-integrated density of states exhibits pronounced peaks at the saddle point energies, demonstrating the van Hove singularities (VHSs) in the topological surface states, whose surface chemical potential, as we show, can be tuned via surface chemical gating, providing access to the topological correlated physics on the surface. Our experimental data reveal a delicate relationship among lattice constant, band gap and spin-orbit coupling strength associated with the topological phase transition in Pb$_{1-x}$Sn$_{x}$Se. Furthermore, we explore the robustness of the TCI phase with VHS in Pb$_{1-x}$Sn$_{x}$Se, which shows a variety of distinct topological phase transitions driven by either thermal instability or broken crystalline symmetry, and thus revealing a rich topological phase diagram connectivity in Pb$_{1-x}$Sn$_{x}$Se for the first time.

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preprint2013arXiv

Oscillatory surface dichroism of an insulating topological insulator Bi2Te2Se

Using circular dichroism-angle resolved photoemission spectroscopy (CD-ARPES), we report a study of the effect of angular momentum transfer between polarized photons and topological surface states on the surface of highly bulk insulating topological insulator Bi2Te2Se. The photoelectron dichroism is found to be strongly modulated by the frequency of the helical photons including a dramatic sign-flip. Our results suggest that the observed dichroism and its sign-flip are consequences of strong coupling between the photon field and the spin-orbit nature of the Dirac modes on the surface. Our studies reveal the intrinsic dichroic behavior of topological surface states and point toward the potential utility of bulk insulating topological insulators in device applications.

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preprint2013arXiv

Tunneling Tuned Spin Modulations in Ultrathin Topological Insulator Films

Quantitative understanding of the relationship between quantum tunneling and Fermi surface spin polarization is key to device design using topological insulator surface states. By using spin-resolved photoemission spectroscopy with p-polarized light in topological insulator Bi2Se3 thin films across the metal-to-insulator transition, we observe that for a given film thickness, the spin polarization is large for momenta far from the center of the surface Brillouin zone. In addition, the polarization decreases significantly with enhanced tunneling realized systematically in thin insulating films, whereas magnitude of the polarization saturates to the bulk limit faster at larger wavevectors in thicker metallic films. Our theoretical model calculations capture this delicate relationship between quantum tunneling and Fermi surface spin polarization. Our results suggest that the polarization current can be tuned to zero in thin insulating films forming the basis for a future spin-switch nano-device.

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