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Researcher profile

Fumin Huang

Fumin Huang contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-sciphysics.app-phcond-mat.mes-hall

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Published work

4 published item(s)

preprint2022arXiv

Optical properties of Au-Hf thin films

The optical properties of thin films of intermetallic Au$_{3}$Hf were experimentally investigated for the first time, which display clear plasmonic properties in the optical and near infrared region with negative permittivity. In contrast to similar alloys, such as films of Au$_{3}$Zr, the films express more negative $ε'$ values and lower $ε''$ values across most of the wavelengths (370-1570 nm) investigated. The Au$_{3}$Hf films were fabricated by DC magnetron sputtering at a range of deposition temperatures, from room temperature to 415$^{o}$C, and annealed at different vacuum levels. The films mostly formed as a combination of Au$_{3}$Hf, Au$_{2}$Hf and Au$_{4}$Hf phases when deposited below 400$^{o}$C, and exclusively Au$_{3}$Hf phase at above 400$^{o}$C, indicating key conditions for isolating this phase. The films were stable when annealed at 10$^{-8}$ Torr, but when annealed again at 10$^{-6}$ Torr the films oxidised and changed into a mix of Au- Hf phases, suggesting resistance to oxidization may be an issue for un-encapsulated applications at elevated temperatures.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Atomically Thin Boron Nitride as an Ideal Spacer for Metal-Enhanced Fluorescence

The metal-enhanced fluorescence (MEF) considerably enhances the luminescence for various applications, but its performance largely depends on the dielectric spacer between the fluorophore and plasmonic system. It is still challenging to produce a defect-free spacer having an optimized thickness with a subnanometer accuracy that enables reusability without affecting the enhancement. In this study, we demonstrate the use of atomically thin hexagonal boron nitride (BN) as an ideal MEF spacer owing to its multifold advantages over the traditional dielectric thin films. With rhodamine 6G as a representative fluorophore, it largely improves the enhancement factor (up to ~95+-5), sensitivity (10^-8 M), reproducibility, and reusability (~90% of the plasmonic activity is retained after 30 cycles of heating at 350 °C in air) of MEF. This can be attributed to its two-dimensional structure, thickness control at the atomic level, defect-free quality, high affinities to aromatic fluorophores, good thermal stability, and excellent impermeability. The atomically thin BN spacers could increase the use of MEF in different fields and industries.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Fingerprints of the Strong Interaction between Monolayer MoS2 and Gold

Gold-mediated exfoliation of MoS2 has attracted considerable interest in the recent years. A strong interaction between MoS2 and Au facilitates preferential production of centimeter-sized monolayer MoS2 with near-unity yield and provides a heterostructure system noteworthy from a fundamental standpoint. However, little is known about the detailed nature of the MoS2-Au interaction and its evolution with the MoS2 thickness. Here, we identify specific vibrational and binding energy fingerprints of such strong interaction using Raman and X-ray photoelectron spectroscopy, which indicate substantial strain and charge-transfer in monolayer MoS2. Near-field tip-enhanced Raman spectroscopy reveals heterogeneity of the MoS2-Au interaction at the nanoscale, reflecting the spatial non-conformity between the two materials. Far-field micro-Raman spectroscopy shows that this interaction is strongly affected by the roughness and cleanliness of the underlying Au. Our results elucidate the nature of the strong MoS2-Au interaction and provide guidance for strain and charge doping engineering of MoS2.

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preprint2020arXiv

Single-defect Memristor in MoS$_2$ Atomic-layer

Non-volatile resistive switching, also known as memristor effect in two terminal devices, has emerged as one of the most important components in the ongoing development of high-density information storage, brain-inspired computing, and reconfigurable systems. Recently, the unexpected discovery of memristor effect in atomic monolayers of transitional metal dichalcogenide sandwich structures has added a new dimension of interest owing to the prospects of size scaling and the associated benefits. However, the origin of the switching mechanism in atomic sheets remains uncertain. Here, using monolayer MoS$_2$ as a model system, atomistic imaging and spectroscopy reveal that metal substitution into sulfur vacancy results in a non-volatile change in resistance. The experimental observations are corroborated by computational studies of defect structures and electronic states. These remarkable findings provide an atomistic understanding on the non-volatile switching mechanism and open a new direction in precision defect engineering, down to a single defect, for achieving optimum performance metrics including memory density, switching energy, speed, and reliability using atomic nanomaterials.

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