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Franz Kreupl

Franz Kreupl contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-sci cond-mat.mes-hall physics.ins-det

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preprint2016arXiv

Graphenic Carbon-Silicon Contacts for Reliability Improvement of Metal-Silicon Junctions

Contact resistance and thermal degradation of metal-silicon contacts are challenges in nanoscale CMOS as well as in power device applications. Titanium silicide (TiSi) contacts are commonly used metal-silicon contacts, but are known to diffuse into the active region under high current stress. In this paper we show that a graphenic carbon (C) contact deposited on n-type silicon (C-Si) by CVD, has the same low Schottky barrier height of 0.45 eV as TiSi, but a much improved reliability against high current stress. The C-Si contact is over 100 million times more stable against high current stress pulses than the conventionally used TiSi junction. The C-Si contact properties even show promise to establish an ultra-low, high temperature stable contact resistance. The finding has important consequences for the enhancement of reliability in power devices as well as in Schottky-diodes and electrical contacts to silicon in general.

preprint2016arXiv

Performance Improvement of Graphenic Carbon X-ray Transmission Windows

Graphenic carbon (GC) x-ray transmission windows for EDX and XRF applications with a high transparency for x-rays below 2.5 keV have been fabricated on 6 inch wafers with a CMOS-compatible CVD process. GC windows with an open diameter of 7.4 mm and a thickness of 770 nm withstand up to 6.5 bars of differential pressure. A high transmissivity of 40 % for fluorine Kα (0.677 keV) radiation is demonstrated for a GC thickness of 650 nm. The GC membranes outperform beryllium (Be) windows, in terms of higher x-ray transmission and better mechanical stability while avoiding the toxicity of Be. Optical profilometry has been employed to visualize a large deformation of the GC layer during the window fabrication. This seems to limit the thickness of the GC windows that can currently be fabricated. A two-step growth process can overcome these limitations and windows with a thickness of up to 6 μm have been realized.

preprint2015arXiv

Design and properties of low energy x-ray transmission windows based on graphenic carbon

X-ray transmission windows for the low energy range, especially between 0.1 keV and 1 keV have been designed and fabricated based on graphenic carbon (GC) with an integrated silicon frame. A hexagonal and a bar grid support structure design have been evaluated. The bar grid design allows to substitute polymer-based windows with the advantages of higher transmission, better rejection of visible light and vacuum operability of the encapsulated silicon drift detectors (SDD). In addition, the high mechanical resilience of graphenic carbon is demonstrated by pressure cycle tests, yielding over 10 million cycles without damage. The data are complemented by bulge tests to determine a Young`s modulus for graphenic carbon of approximately 130 GPa. Additional finite-element simulation and Raman studies reveal that the mechanical stress is not homogeneously distributed, but reaches a maximum near the anchoring points of the free standing graphenic carbon membrane.

preprint2015arXiv

High Performance X-Ray Transmission Windows Based on Graphenic Carbon

A novel x-ray transmission window based on graphenic carbon has been developed with superior performance compared to beryllium transmission windows that are currently used in the field. Graphenic carbon in combination with an integrated silicon frame allows for a window design which does not use a mechanical support grid or additional light blocking layers. Compared to beryllium, the novel x-ray transmission window exhibits an improved transmission in the low energy region ($0.1 hbox{keV}-3 hbox{keV}$ ) while demonstrating excellent mechanical stability, as well as light and vacuum tightness. Therefore, the newly established graphenic carbon window, can replace beryllium in x-ray transmission windows with a nontoxic and abundant material. Index terms: Beryllium, Carbon, Graphene, Thin films, X-ray applications, X-ray detectors

preprint2014arXiv

Advancing CMOS with Carbon Electronics

A fresh look on carbon-based transistor channel materials like single-walled carbon nanotubes (CNT) and graphene nanoribbons (GNR) in future electronic applications is given. Although theoretical predictions initially promised that GNR (which do have a bandgap) would perform equally well as transistors based on CNTs, experimental evidence for the well-behaved transistor action is missing up to now. Possible reasons for the shortcomings as well as possible solutions to overcome the performance gap will be addressed. In contrast to GNR, short channel CNT field effect transistors (FET) demonstrate in the experimental realization almost ideal transistor characteristics down to very low bias voltages. Therefore, CNT-FETs are clear frontrunners in the search of a future CMOS switch, that will enable further voltage and gate length scaling. Essential features which distinguish CNT-FETs from alternative solution will be discussed and benchmarked. Finally, the gap to industrial wafer-level scale SWCNT integration will be addressed and strategies for achieving highly aligned carbon nanotube fabrics will be discussed. Without such a high yield wafer-scale integration, SWCNT circuits will be an illusionary dream.

preprint2014arXiv

Carbon Memory Assessment

The geometrical and performance scaling of silicon CMOS integrated circuit technology over the past 50 years has enabled many affordable new products for business and consumer applications. Recognizing that Flash is approaching its ultimate physical scaling limits within the next 10 years or so, the global electronics research community has begun an intense search for a new paradigm and technology for extending the functional scaling of memory technologies. Several promising nonvolatile memory concepts have emerged, based on different switching and retention mechanisms from those of Flash memory, e.g., STTRAM, RRAM, PCM and more recently, resistive memories based on carbon, which are the topic of this paper. This paper will introduce into the diverse field of carbon materials by recollecting some effects in carbon that can be used to produce a multiple time switchable, non-volatile unipolar resistive memory with potential high scalability down to atomic dimensions. Carbon-based memory is a non-volatile resistive memory, therefore, the same architectures, circuits, select transistor or diodes like in ReRAM or PCRAM can be considered as implementation. The big advantage of carbon memory might be the high temperature retention of 250 C, which makes it attractive for automotive and harsh conditions. This is a white paper for the ITRS meeting on emerging research devices (ERD) in Albuquerque, New Mexico, on August 25-26, 2014.

preprint2010arXiv

Carbon-based Materials as Key-enabler for More Than Moore

Carbon-based materials like nanotubes and graphene are heavily investigated as future CMOS-like devices and in interconnect applications. While much of the interest has been devoted to the device aspects in competition to conventional CMOS transistors, the paper here will focus on some less known applications of carbon. Proposed and demonstrated are interconnect applications like highly conductive electrodes for capacitors, gate material or through-silicon vias (TSV), novel non-volatile memories, carbon-silicon Schottky diodes or superior sensors.

preprint2006arXiv

Silicon Nanowires, Catalytic Growth and Electrical Characterization

Nominally undoped silicon nanowires (NW) were grown by catalytic chemical vapor deposition. The growth process was optimized to control the NWs diameters by using different Au catalyst thicknesses on amorphous SiO2, Si3N4, or crystalline-Si substrates. For SiO2 substrates an Ar plasma treatment was used to homogenize the catalyst coalescence, and thus the NWs diameter. Furthermore, planar field effect transistors (FETs) were fabricated by implementing 10 to 30 nm thin nominally undoped Si-NWs as the active region. Various silicides were investigated as Schottky-barrier source and drain contacts for the active region. For CoSi, NiSi and PdSi contacts, the FETs transfer characteristics showed p-type behavior. A FET consisting of a single Si-NW with 20 nanometers diameter and 2.5 micrometer gate-length delivers as much as 0.15 microA on-current at 1 volt bias voltage and has an on/off current ratio of 10^7. This is in contrast to recent reports of low conductance in undoped Si.