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Researcher profile

François Lefloch

François Lefloch contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2015arXiv

Silicon Superconducting Quantum Interference Device

We have studied a Superconducting Quantum Interference SQUID device made from a single layer thin film of superconducting silicon. The superconducting layer is obtained by heavily doping a silicon wafer with boron atoms using the Gas Immersion Laser Doping (GILD) technique. The SQUID device is composed of two nano-bridges (Dayem bridges) in a loop and shows magnetic flux modulation at low temperature and low magnetic field. The overall behavior shows very good agreement with numerical simulations based on the Ginzburg-Landau equations.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Electric field-controlled rippling of graphene

Metal/graphene interfaces generated by electrode deposition induce barriers or potential modulations influencing the electronic transport properties of graphene based devices. However, their impact on the local mechanical properties of graphene is much less studied. Here we show that graphene near a metallic interface can exhibit a set of ripples self-organized in domains whose topographic roughness is controlled by the tip bias of a scanning tunneling microscope. The reconstruction from topographic images of graphene bending energy maps sheds light on the local electro-mechanical response of graphene under STM imaging and unveils the role of the stress induced by the vicinity of graphene/metal interface in the formation and the manipulation of these ripples. Since microscopic rippling is one of the important factors that limit charge carrier mobility in graphene, the control of rippling with a gate voltage may have important consequences in the conductance of graphene devices where transverse electric fields are created by contactless suspended gate electrodes. This opens also the possibility to dynamically control the local morphology of graphene nanomembranes.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Sub-Gap Structure in the Conductance of a Three-Terminal Josephson Junction

Three-terminal superconductor (S) - normal metal (N) - superconductor (S) Josephson junctions are investigated. In a geometry where a T-shape normal metal is connected to three superconducting reservoirs, new sub-gap structures appear in the differential resistance for specific combinations of the superconductor chemical potentials. Those correspond to a correlated motion of Cooper pairs within the device that persist well above the Thouless energy and is consistent with the prediction of quartets formed by two entangled Cooper pairs. A simplified nonequilibrium Keldysh Green's function calculation is presented that supports this interpretation.

0 citations0 reviewsNo code linkedOpen access